Direct Bonding between Quaternary Compound Semiconductor  and  Garnet Crystals for Integrated Optical Isolator

Yokoi, Hiroyoshi; Mizumoto, Tetsuya; Shimizu, Mitsuaki; Futakuchi, N.; Kaida, N.; Nakano, Yoshiaki

doi:10.1143/jjap.38.195

Cited by 11 publications

(2 citation statements)

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“…In the optical communication systems, an integrated optical waveguide isolator has been strongly required for the integration of optoelectronic devices. In particular, wafer bonding is essential to fabricate an integrated optical waveguide isolator, since it enables the interface formation between semiconductor and magnetic thin film [1,2]. Although the wafer bonding is an attractive technique for the heterogeneous bonding of dissimilar materials, high-temperature heat treatment after the initial bonding process has many problems such as undesirable changes and decomposition.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature O<sub>2</sub> Plasma-Assisted Wafer Bonding of InP and a Garnet Crystal for an Optical Waveguide Isolator

Roh

Yang

et al. 2007

SSP

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A novel process of wafer bonding between InP and a garnet crystal (Gd3Ga5O12, CeY2Fe5O12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB.

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Section: Introductionmentioning

confidence: 99%

Low Temperature O<sub>2</sub> Plasma-Assisted Wafer Bonding of InP and a Garnet Crystal for an Optical Waveguide Isolator

Roh

Yang

et al. 2007

SSP

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“…Optical isolators are key devices in optical communication systems for 1.3 or 1.55 µm wavelength bands for reducing the external relative feedback noise in distributed feedback (DFB) lasers integrated on the PICs. Techniques for achieving direct bonding between semiconductors and magneto-optical materials have been proposed [9]. However, no successful monolithic integration of optical isolators using epitaxial growth techniques has been realized so far for the present III-V compound semiconductor-based PICs.…”

Section: Introductionmentioning

confidence: 99%

Ferromagnetic nanoclusters hybridized in Mn-incorporated GaInAs layers during metal–organic vapour phase epitaxial growth on InP layers under low growth temperature conditions

Hara¹,

Kuramata

2005

Nanotechnology

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We demonstrate the successful formation of ferromagnetic nanoclusters in Mn-incorporated GaInAs layers grown by metal-organic vapour phase epitaxy on InP (100) substrates under low growth temperature conditions below 450 °C. We find that MnAs nanoclusters with NiAs-type hexagonal crystallographic structures, which show ferromagnetic characteristics up to a relatively high temperature of about 305 K, are formed near the layer surfaces of Mn-incorporated GaInAs layers grown at 440 °C. After deposition of undoped InP layers on Mn-incorporated GaInAs layers, MnP nanoclusters with orthorhombic cubic crystallographic structures, in which 7% arsenic is incorporated, are formed in InP layers. The samples with MnP nanoclusters show strong ferromagnetic coupling up to about 305 K, although the Curie temperature of MnP bulk compounds is 291 K. Energy dispersive x-ray spectroscopy (EDS) indicates that Mn concentrations in InP and GaInAs layers surrounding MnP nanoclusters are almost negligible. MnAs nanoclusters are also formed in Mn-incorporated GaAs layers grown under low growth temperature conditions of 450 °C on GaAs (100) substrates. From the results of magnetic characterizations with respect to growth temperatures of the samples, we found that all the Mn-incorporated GaAs layers grown at temperatures below 450 °C showed ferromagnetic behaviour. 61.46.+w, 68.37.Lp, 75.75.+a, 81.15.Gh, [2,3] and so on (for a review, see [1,2]). Almost all of these materials have been grown by low temperature molecular beam epitaxy (LTMBE) or ion implantation of magnetic materials on semiconductors [4]. However, although metal-organic vapour phase epitaxy (MOVPE) is one of the most important and preferred technologies for the fabrication of electronic and photonic semiconductor devices, particularly in a production fashion, there are nevertheless only a few reports on MOVPE growth of III-V DMS materials and FM III-V hybrids [5 -8]. PACS:Magneto-optical devices utilizing the Faraday or Kerr effect for III-V DMS materials or FM III-V hybrids are very promising for realizing monolithic integration of magneto-optical devices such as waveguide-type optical isolators or circulators on the present III-V compound semiconductor-based photonic integrated circuits (PICs). This is because such a material system is compatible with III-V compound semiconductors such as GaAs and InP. In particular, FM III-V hybrids are more suitable because they show strong ferromagnetic coupling even above room temperature. Optical isolators are key devices in optical communication systems for 1.3 or 1.55 µm wavelength bands for reducing the external relative feedback noise in distributed feedback (DFB) lasers integrated on the PICs. Techniques for achieving direct bonding between semiconductors and magneto-optical materials have been proposed [9]. However, no successful monolithic integration of optical isolators using epitaxial growth techniques has been realized so far for the present III-V compound semiconductor-based PICs. Recently, device structures for...

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Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding

Yokoi

Mizumoto

Shinjo

et al. 1999

IEE Proceedings - Optoelectronics

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Direct Bonding between Quaternary Compound Semiconductor and Garnet Crystals for Integrated Optical Isolator

Cited by 11 publications

References 10 publications

Low Temperature O<sub>2</sub> Plasma-Assisted Wafer Bonding of InP and a Garnet Crystal for an Optical Waveguide Isolator

Low Temperature O<sub>2</sub> Plasma-Assisted Wafer Bonding of InP and a Garnet Crystal for an Optical Waveguide Isolator

Ferromagnetic nanoclusters hybridized in Mn-incorporated GaInAs layers during metal–organic vapour phase epitaxial growth on InP layers under low growth temperature conditions

Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding

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