Direct calculation of sensor performance in an FEA model [MEMS]

Krondorfer, Rudolf; Lommasson, T.

doi:10.1109/icsens.2002.1037299

Cited by 6 publications

(4 citation statements)

References 4 publications

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“…Previous work [12] found that the level-0 package (bare sensor die without the molding compound) did not induce significant offset. The calculated offset from the level-0 package FEA are reprinted in Table 7.…”

Section: Resultsmentioning

confidence: 98%

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Finite element simulation of package stress in transfer molded MEMS pressure sensors

Krondorfer

Kim

et al. 2004

Microelectronics Reliability

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Section: Resultsmentioning

confidence: 98%

“…These voltages were found by simulating a bare sensor die and calibrating the simulated results to experimental measurements made on bare dies [12].…”

Section: Electrical Modelingmentioning

confidence: 99%

Finite element simulation of package stress in transfer molded MEMS pressure sensors

Krondorfer

Kim

et al. 2004

Microelectronics Reliability

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“…FEM expresses the visualization details of where the structures deform or twist, and indicates the distribution of stresses and the displacements. FEM software possesses an abundance of simulation options for controlling the complex system of both modeling and analysis [ 6 ]. In the development of this pressure sensor, bulk micromachining was applied to the fabrication of the sensor.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Structural Design of Micro Pressure Sensors for Tire Pressure Measurement Systems (TPMS)

Tian

Zhao

Jiang

et al. 2009

Sensors

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In this paper we describe the design and testing of a micro piezoresistive pressure sensor for a Tire Pressure Measurement System (TPMS) which has the advantages of a minimized structure, high sensitivity, linearity and accuracy. Through analysis of the stress distribution of the diaphragm using the ANSYS software, a model of the structure was established. The fabrication on a single silicon substrate utilizes the technologies of anisotropic chemical etching and packaging through glass anodic bonding. The performance of this type of piezoresistive sensor, including size, sensitivity, and long-term stability, were investigated. The results indicate that the accuracy is 0.5% FS, therefore this design meets the requirements for a TPMS, and not only has a smaller size and simplicity of preparation, but also has high sensitivity and accuracy.

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confidence: 99%

The analysis and structural design of micro SOI pressure sensors

Tian¹,

Zhao²,

Jiang³

et al. 2009

2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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j'square (max) 0.308pa 2 (1) h 2 (j' circu la r (m ax) = 3 pr 2 (2) 4""h"2 II. STRUCTURE DESIGN In the pressure sensors, a square diaphragm is used because of its higher sensitivity compared to a circular diaphragm with corresponding thickness h . A measure for the sensitivity of a pressure sensor is the maximum mechanical stress at the edge of the diaphragm. The maximum mechanical stress of a square and a circular diaphragm is given by the following equations respectively:Where (j'square(max) is the maximum mechanical stress for a square diaphragm; (j'circular(max) is the maximum mechanical stress for a circular diaphragm; p represents the applied pressure; h is the diaphragm thickness; a is the diaphragm width/length for square and r is the diaphragm radius for circular respectively.When the parameters of square and circular diaphragm are same thickness and width (a =2 r ), there is the relationship between them under same pressure input.This shows that the maximum stress at the edge of a square diaphragm is considerably higher than at the edge of a circular diaphragm, thus yielding a pressure sensitivity which is approximately 60% higher.The structure of pressure sensor is shown in Fig 1. The pressure sensor is composed of a square diaphragm and a deep cavity with 54.7°inclined wall. The square diaphragm acts as the sensing component that senses the measured pressure directly. The applied pressure is transformed to the strain and the stress of the square diaphragm. A vacuum condition in the sensor becomes a necessity for the measurement of absolute pressure. This structure is obtained by the way of anodic bonding with Pyrex glass in vacuum condition. The size of structure can be determined as TABLE I . It was utilized the anisotropy characteristic along different orientation of single crystal silicon. The piezoresisitance characteristic was used to (3) (j' square(max) = 1.64 (j' circular(max) Abstract -A kind of micro piezoresistive pressure sensor with stable performances under high temperature is designed based on the silicon on insulator (SOl). Through analyzing the stress distribution of diaphragm by finite element method (FEM), the model of structure was established. The fabrication operated on SOl wafer, which can be used in extreme high temperature environments, and applied the technology of anisotropy chemical etching. Performances of this kind of SOl piezoresistive sensor, including size, sensitivity, and temperature were investigated. The result shows that the precision is O.57 % FS. Therefore, this kind of design not only has smaller size, simplicity preparation but also has high sensitivity, temperature coefficient and accuracy.

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Direct calculation of sensor performance in an FEA model [MEMS]

Cited by 6 publications

References 4 publications

Finite element simulation of package stress in transfer molded MEMS pressure sensors

Finite element simulation of package stress in transfer molded MEMS pressure sensors

Fabrication and Structural Design of Micro Pressure Sensors for Tire Pressure Measurement Systems (TPMS)

The analysis and structural design of micro SOI pressure sensors

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