Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO<sub>2</sub>, and Cr

Goodyear, Andy; Boettcher, Monika; Stolberg, Ines A.; Cooke, Mike

doi:10.1117/12.2085469

Cited by 7 publications

(16 citation statements)

References 3 publications

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“…At 100 nm pitch, the etch selectivities of common resists on silicon are 2.0:1 for PMMA, 2.9:1 for ZEP520A and 4.2:1 for HSQ. 23 Etch selectivity is expected to decrease at smaller pitch due to the decreasing probability of landing ions between the features, so the 6.2:1 selectivity for Si reported here at 17 nm pitch is especially notable, by comparison. The improvement in etch performance demonstrated here by Cr 8 F 8 (Pivalate) 16 on silicon has also been demonstrated previously for related metal-organic resists, where selectivities greater than 100:1 could be achieved at larger pitches.…”

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confidence: 65%

Plasma-Etched Pattern Transfer of Sub-10 nm Structures Using a Metal–Organic Resist and Helium Ion Beam Lithography

et al. 2019

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Field emission devices are promising candidates to replace silicon FinFETs as nextgeneration nanoelectronic components. For these devices to be adopted, nanoscale field emitters with nanoscale gaps between them need to be fabricated, requiring the transfer of e.g. sub-10 nm patterns with sub-20 nm pitch into substrates like silicon and tungsten. New resist materials must therefore be developed that exhibit the properties of sub-10 nm resolution and high dry etch resistance. A negative tone, metal-organic resist is presented here. It can be patterned to produce sub-10 nm features when exposed with helium ion beam lithography at line doses on the order of 10s of pC/cm. The resist was used to create 5 nm wide, continuous, discrete lines spaced on a 16 nm pitch in silicon, and 6 nm wide lines on 18 nm pitch in tungsten, with line edge roughness of 3 nm. After the lithographic exposure, the resist demonstrates high resistance to silicon and tungsten dry etch conditions (SF 6 and C 4 F 8 plasma), allowing the pattern to be transferred into the underlying substrates. The resist's etch selectivity for silicon and tungsten was measured to be 6.2:1 and 5.6:1, respectively; this allowed 3-4 nm thick resist films to yield structures that were 21 and 19 nm tall, respectively, while both maintained sub-10 nm width on sub-20 nm pitch.

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confidence: 65%

Plasma-Etched Pattern Transfer of Sub-10 nm Structures Using a Metal–Organic Resist and Helium Ion Beam Lithography

et al. 2019

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“…These etching results were so unusual that they were pursued further. First, the resist was patterned with a larger line width of 25 nm and a pitch of 200 nm in a 60 nm thick film (Figure D).…”

Section: Figurementioning

confidence: 97%

“…This alternative approach has huge flexibility and greater speed than we can achieve at present owing to the advantages of laser writing compared with e‐beam writing. However, the resulting materials are organic polymers and, as with other polymeric resist materials, are unlikely to demonstrate the very high etching selectivity of 1 . The array of new techniques being developed to pattern surfaces and nanostructures should be regarded as complementary, and constitute possible routes forward to make still smaller nanodevices in the future…”

Section: Figurementioning

confidence: 99%

Use of Supramolecular Assemblies as Lithographic Resists

et al. 2017

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“…A Monte Carlo simulator was developed at the University of Manchester to gain a physical understanding of the internal electron scattering effects inside the Cr8F 8 (Pivalate) 16 and Cr 8 F 8 (methacrylate) 16 resist systems [4,7]. Unfortunately, no single model accurately describes the electron behaviour in a resist for the energy range of 5 eV -100 KeV.…”

Section: Simulation and Experimentalmentioning

confidence: 99%

“…The simulation was performed on a 30 nm layer of each electron beam resist, Cr 8 F 8 (Pivalate) 16 and Cr 8 F 8 (Methacrylate) 16 , with an underlying 50 nm substrate of silicon and chromium, respectively. Table 1 shows the physical properties of each material.…”

Section: Simulation and Experimentalmentioning

confidence: 99%

Design and implementation of the next generation electron beam resists for the production of EUVL photomasks

Lewis

DeRose

Alty

et al. 2018

Photomask Technology 2018

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A new class of resist materials has been developed that is based on a family of heterometallic rings. The work is founded on a Monte Carlo simulation that utilizes a secondary and Auger electron generation model to design resist materials for high resolution electron beam lithography. The resist reduces the scattering of incident electrons to obtain line structures that have a width of 15 nm on a 40 nm pitch. This comes at the expense of lowering the sensitivity of the resist, which results in the need for large exposure doses. Low sensitivity can be dramatically improved by incorporating appropriate functional alkene groups around the metal-organic core, for example by replacing the pivalate component with a methacrylate molecule. This increases the resist sensitivity by a factor of 22.6 and demonstrates strong agreement between the Monte Carlo simulation and the experimental results. After the exposure and development processes, what remains of the resist material is a metal-oxide that is extremely resistant to silicon dry etch conditions; the etch selectivity has been measured to be 61:1.

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Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO₂, and Cr

Cited by 7 publications

References 3 publications

Plasma-Etched Pattern Transfer of Sub-10 nm Structures Using a Metal–Organic Resist and Helium Ion Beam Lithography

Plasma-Etched Pattern Transfer of Sub-10 nm Structures Using a Metal–Organic Resist and Helium Ion Beam Lithography

Use of Supramolecular Assemblies as Lithographic Resists

Design and implementation of the next generation electron beam resists for the production of EUVL photomasks

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Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

Cited by 7 publications

References 3 publications

Plasma-Etched Pattern Transfer of Sub-10 nm Structures Using a Metal–Organic Resist and Helium Ion Beam Lithography

Plasma-Etched Pattern Transfer of Sub-10 nm Structures Using a Metal–Organic Resist and Helium Ion Beam Lithography

Use of Supramolecular Assemblies as Lithographic Resists

Design and implementation of the next generation electron beam resists for the production of EUVL photomasks

Contact Info

Product

Resources

About

Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO₂, and Cr