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This paper describes a new multi beam approach in electron beam lithography called Multi Shaped Beam (MSB). Based on the well known Variable Shaped Beam (VSB) principle, the single shaped beam arrangement is extended and complemented by an array of individually controlled shaped beams. The positive effect of the MSB approach on resolution limiting stochastic beam blur due to Coulomb interactions will be highlighted applying detailed electronoptical Monte-Carlo simulations. To verify the feasibility of the above-mentioned new approach, there is also depicted a proof-of-lithography test stand based on a complete e-beam-lithography system containing MSB-specific hardware and software components.

According to the ITRS [1] photo mask is a significant challenge for the 22nm technology node requirements and beyond. Mask making capability and cost escalation continue to be critical for future lithography progress. On the technological side mask specifications and complexity have increased more quickly than the half-pitch requirements on the wafer designated by the roadmap due to advanced optical proximity correction and double patterning demands. From the economical perspective mask costs have significantly increased each generation, in which mask writing represents a major portion. The availability of a multi-electron-beam lithography system for mask write application is considered a potential solution to overcome these challenges [2,3].In this paper an update of the development status of a full-package high-throughput multi electron-beam writer, called Multi Shaped Beam (MSB), will be presented. Lithography performance results, which are most relevant for mask writing applications, will be disclosed. The MSB technology is an evolutionary development of the matured single Variable Shaped Beam (VSB) technology. An arrangement of Multi Deflection Arrays (MDA) allows operation with multiple shaped beams of variable size, which can be deflected and controlled individually [4]. This evolutionary MSB approach is associated with a lower level of risk and a relatively short time to implementation compared to the known revolutionary concepts [3,5,6].Lithography performance is demonstrated through exposed pattern. Further details of the substrate positioning platform performance will be disclosed. It will become apparent that the MSB operational mode enables lithography on the same and higher performance level compared to single VSB and that there are no specific additional lithography challenges existing beside those which have already been addressed [1].