Direct current and high frequency performance of thin film InP-based tunneling hot electron transfer amplifiers

Abstract

We report the dc and high frequency performance of thin-film InP-based tunneling hot electron transfer amplifiers bonded to a variety of host substrates. The high-frequency device performance is slightly degraded since the InP substrate removal and bonding process for these devices have not yet been optimized. This demonstration represents an important step toward the development of high-frequency, thin-film InP-based electronic devices integrated with conventional Si-based circuit elements.

Vertical Graphene-Base Hot-Electron Transistor

“…The effective gain may be overestimated when a collector bias is applied because of the quantum capacitance of graphene . The values of the effective gain α* for the five devices range from ∼0.3 to 2.1%, which are still relatively low compared to state-of-the-art HETs. , …”

“…24 The values of the effective gain α* for the five devices range from ∼0.3 to 2.1%, which are still relatively low compared to state-of-the-art HETs. 12,13 There are two other important factors that affect the gain α (and α*) in addition to the collector/emitter area ratio. One is the energy of hot electrons.…”

“…In the past, hot-electron transistors (HETs) have also been investigated as a promising candidate for high-speed electronic devices because of their short base transit time. − However, because of the shortfall in material selections and fabrication technology, most HETs investigated previously suffer from difficulties in further reducing the base thickness in order to achieve a short transit time and a high gain while maintaining a low base series resistance. , To overcome these obstacles, the concept of using graphene as the base region for hot-electron transistors (GB-HET) has been proposed by Mehr et al, followed by Kong et al The GB-HET utilizes both the operational principle of conventional HETs and the unique properties of graphene (e.g., the single atomic thickness, and the semimetallic property). These properties positively influence the base transit time and the base series resistance, which can improve device performances for high-speed and high-frequency applications. , Prototypes of GB-HETs have been fabricated and tested to illustrate the device concept recently .…”

Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

“…The OFF current measured is around two orders of magnitude lower than the reported in recent literature [20] and, accordingly, our HET devices exhibit a large ON/OFF ratio of ~10 5 . The equivalent subthreshold swing (defined as the required V E for a ten-fold change in I C ) is ~96 mV/dec at ~80 K and below, a very suitable value for applications in high-speed and frequency integrated-circuits [24,25]. Figure 2 (b) shows in detail (in 5 K steps) the evolution of the hot electron current for temperatures below 190 K, while Figure 2 (c) displays an exponential decrease with decreasing temperature for the thermal leakage down to 160 ± 20 K. However, at temperatures below 160 K, the hotelectron current increases linearly for V E voltages larger than the metal/semiconductor barrier height.…”

Proposal to Develop Resonant-Tunneling Diode Circuits Using Epitaxial Liftoff

“…The ongoing need for improved speed and density in high-performance multifunctional electronics has motivated extensive research into the transfer and bonding of electronic and optoelectronic devices to host substrates, including silicon [1][2][3][4][5]. Hybrid thin-film integration of III-V devices onto CMOS circuitry is a promising technique which has been successfully applied to optoelectronic circuits, allowing each component to be independently optimized with proven technologies at relatively low cost [6][7][8].…”