2022
DOI: 10.1016/j.apsusc.2022.153046
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Direct detection of electronic states for individual indium arsenide (InAs) quantum dots grown by molecular beam epitaxy

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Cited by 11 publications
(12 citation statements)
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“…Therefore, the design of individual CNT is still needed to explore the effect of nanoscale lengths of CNTs on the rectenna effect of the visible range of EM radiation. The electrical characteristics including photodetection and memory characteristics of individual nanomaterials can be explored with the help of atomic force microscopy. Our previous work investigated the rectenna effect of CNTs dispersed on different substrates like SiO 2 /Si and CuO/Cu . Similarly, the nanojunction material effect on the photoelectric response of single-wall carbon nanotube rectennas was also explored.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the design of individual CNT is still needed to explore the effect of nanoscale lengths of CNTs on the rectenna effect of the visible range of EM radiation. The electrical characteristics including photodetection and memory characteristics of individual nanomaterials can be explored with the help of atomic force microscopy. Our previous work investigated the rectenna effect of CNTs dispersed on different substrates like SiO 2 /Si and CuO/Cu . Similarly, the nanojunction material effect on the photoelectric response of single-wall carbon nanotube rectennas was also explored.…”
Section: Introductionmentioning
confidence: 99%
“…22,40–43 Given the size of the NCs, between the molecular scale and microscopic devices, the concept of nano-Schottky is relevant, which takes into account a non-ideal SB due to the low dimensionality of the metal/semiconductor interface (ref. 27–29 and 35, see also a mini-review in ref. 44 and references therein).…”
Section: Discussionmentioning
confidence: 99%
“…This finding is in contrast to that of a size-dependent SBH observed in various non-ideal Schottky diodes, 31–33 or diodes with nanometer-scale contacts, 34,35 and nano-diodes made of semiconducting nanocrystals or nanodots. 27–29…”
Section: Introductionmentioning
confidence: 99%
“…[44] The resistive switching behavior highly depends on the device structure with an active layer based on the single material or heterojunctions of two different fabrics or composites of two materials. [45][46][47][48][49][50] The device structure engineering helps investigate the different working mechanisms like formation and rupture of conducting filament, DOI: 10.1002/aisy.202200281…”
Section: Introductionmentioning
confidence: 99%
“…[ 44 ] The resistive switching behavior highly depends on the device structure with an active layer based on the single material or heterojunctions of two different fabrics or composites of two materials. [ 45–50 ] The device structure engineering helps investigate the different working mechanisms like formation and rupture of conducting filament, redox reactions, ion (cations and anions) migration, and charge trapping and detrapping. [ 51–57 ] Researchers are improving memristor performance by investigating the active layer materials, device structure, and fabrication technology to operate on low power consumption, low operating voltage, and fast switching speed [ 58–61 ] for universal memory applications in the fields of signal processing, [ 62 ] logic circuits, [ 63 ] true number generator, [ 64 ] tunable filters, [ 65 ] and programmable analog circuits.…”
Section: Introductionmentioning
confidence: 99%