Direct electrical observation of plasma wave<b>-</b>related effects in GaN-based two-dimensional electron gases

Zhao, Yi; Chen, W.; Li, W.; Zhu, Mingxin; Yue, Yuanzheng; Song, Bo; Encomendero, Jimy; Sensale‐Rodriguez, Berardi; Xing, Huili Grace; Fay, Patrick

doi:10.1063/1.4900964

Cited by 12 publications

(6 citation statements)

References 11 publications

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“…In this sense, recent investigations have successfully measured the kinetic inductance of the 2DEG at frequencies in the G-band (140-220 GHz) [49]. A good agreement was found between the measured and the kinetic inductance predicted by the distributed transmission line model; showing conclusively that plasma-oscillations were exited in the channel.…”

Section: Fig 11mentioning

confidence: 70%

THz devices based on 2D electron systems

et al. 2015

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In two-dimensional electron systems with mobility on the order of 1,000 -10,000 cm 2 /Vs, the electron scattering time is about 1 ps. For the THz window of 0.3 -3 THz, the THz photon energy is in the neighborhood of 1 meV, substantially smaller than the optical phonon energy of solids where these 2D electron systems resides. These properties make the 2D electron systems interesting as a platform to realize THz devices. In this paper, I will review 3 approaches investigated in the past few years in my group toward THz devices. The first approach is the conventional high electron mobility transistor based on GaN toward THz amplifiers. The second approach is to employ the tunable intraband absorption in 2D electron systems to realize THz modulators, where I will use graphene as a model material system. The third approach is to exploit plasma wave in these 2D electron systems that can be coupled with a negative differential conductance element for THz amplifiers/sources/detectors.

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Section: Fig 11mentioning

confidence: 70%

THz devices based on 2D electron systems

et al. 2015

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“…In order to theoretically analyze the properties of this periodic structure, the transmission line formalism, described in e.g. [11][12][13][14], is employed. In this case, the plasmon dispersion can be written as [14]:…”

Section: Discussionmentioning

confidence: 99%

Effect of electron momentum relaxation time on the terahertz properties of graphene structures

Condori

Sensale‐Rodriguez

2015

2015 40th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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In this work we describe the effect of the electron momentum relaxation time on the terahertz properties of periodically-patterned graphene plasmonic structures; more specifically, its effect on the quality of the characteristic plasmonic resonances. From analytical theory as well as numerical simulations, it is observed that the electron momentum relaxation time heavily affects the quality factor of these resonances. In general, for a given electron concentration level, the larger the electron momentum relaxation time the larger the quality factor at resonance.

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“…34 In addition, N-polar high electron mobility transistors (HEMTs), could be potentially readily integrated with a resonant tunneling cavity, enabling electronic gain within the terahertz band. [35][36][37] Npolar-based polarization engineering is also promising for the design III-nitride photocathodes 38 , lightemitting diodes 26,[39][40][41] and solar cells 42 with enhanced emission, injection, and collection efficiencies, respectively. More fundamentally, epitaxy along the [000 1] direction offers additional advantages stemming from the higher thermal stability of the N-polar crystal surface.…”

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confidence: 99%

N-polar GaN/AlN resonant tunneling diodes

Cho,

Encomendero,

et al. 2020

Preprint

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N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential conductance (NDC) region with a peak tunneling current of 6.8 ± 0.8 kA/cm 2 at a forward bias of ∼8 V. Under reverse bias, the polarizationinduced threshold voltage is measured at ∼ −4 V. These resonant and threshold voltages are well explained with the polarization field which is opposite to that of the metal-polar counterpart, confirming the N-polarity of the RTDs. When the device is biased in the NDC-region, electronic oscillations are generated in the external circuit, attesting to the robustness of the resonant tunneling phenomenon. In contrast to metal-polar RTDs, N-polar structures have the emitter on the top of the resonant tunneling cavity. As a consequence, this device architecture opens up the possibility of seamlessly interfacing-via resonant tunneling injection-a wide range of exotic materials with III-nitride semiconductors, providing a route to explore new device physics.

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Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

Cited by 12 publications

References 11 publications

THz devices based on 2D electron systems

THz devices based on 2D electron systems

Effect of electron momentum relaxation time on the terahertz properties of graphene structures

N-polar GaN/AlN resonant tunneling diodes

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