Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors

Generic high‐frequency small‐signal look‐up table model extraction for Si–Ge heterojunction bipolar transistors

“…'Open' and 'short' test structures are used to measure the microwave and mm-wave effects of interconnections between the probe-contact pads and the actual device terminals, and they are de-embedded them from the measured S-parameters [17]. This technique is frequently used for HBT devices to remove the extrinsic capacitances as well [18][19][20][21][22]. However, it fails for devices with multifinger layout.…”

Temperature dependence of electron ionization coefficients of InGaP measured in InGaP/GaAs/InGaP DHBT's

“…The onset of avalanche multiplication governed by impact ionization, and leading to ultimate breakdown, is one of the important parameters for power devices. Recently, the use of InGaP as the collector material for heterojunction bipolar transistor to improve the base-collector junction breakdown and device power performance have been investigated [2][3][4]. It has been found that InGaP/GaAs/InGaP double-heterojunction bipolar transistors (HBTs) with InGaP collectors can improve over GaAs single-HBTs in power-amplifier applications, based on increased breakdown electric field, lower offset voltage, and absence of saturation charge storage [5].…”

Stepping toward standard methods of small-signal parameter extraction for HBTs

“…But this method, though attractive in many aspects, had two major disadvantages. First, the method was still relying on optimization to find the parameters of the emitter branch and elements of the delay time, a problem which was later resolved in [5]. Second, the distributed nature of the base resistance and base-collector capacitance was not taken into account.…”