Direct extraction of equivalent circuit model parameters for HBTs

Uscola, R.; Tutt, M.

doi:10.1109/icmts.2001.928642

Cited by 2 publications

(1 citation statement)

References 3 publications

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“…An analytical approach to HBT equivalentcircuit parameter extraction has been recently reported [1][2][3][4][5]. An approach combining analytical and optimization routine for parameter-extraction purposes was reported in [6], in which dc and multi-bias RF measurements were used in conjunction with a conditioned impedance-block optimization approach.…”

Section: Introductionmentioning

confidence: 99%

A novel direct parameter-extraction method for GaInP/GaAs HBTs small-signal model

Liu¹,

Sun²,

Li³

et al. 2004

Int J RF and Microwave Comp Aid Eng

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An accurate and broadband method for heterojunction bipolar transistors (HBTs) small-signal model parameters is presented in this article. This method differs from previous ones by extracting the equivalent-circuit parameters without using a special test structure or global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of intrinsic parameters is extracted from impedance and admittance representation of the measured S-parameters in the frequency range of 1-12 GHz under extracted-bias conditions. An equivalent circuit for the HBT under a forward-bias condition is proposed for extraction of access resistance and parasitic inductance. The method yields a deviation of less then 5% between the measured and modeled S-parameters.

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