Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs

Raskin, Jean‐Pierre; Dambrine, G.; Gillon, Renaud

doi:10.1109/75.645191

Cited by 52 publications

(29 citation statements)

References 5 publications

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“…6,7 We further analyzed the CNF-based TFT characteristics by employing a small-signal equivalent circuit model to extract the transistor parameter. 23 As shown in Fig. 3(b), Advanced Design System (ADS 2013) was used to generate a small-signal equivalent circuit model.…”

Section: à3mentioning

confidence: 99%

Microwave flexible transistors on cellulose nanofibrillated fiber substrates

Seo

Chang

Lee

et al. 2015

Applied Physics Letters

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In this paper, we demonstrate microwave flexible thin-film transistors (TFTs) on biodegradable substrates towards potential green portable devices. The combination of cellulose nanofibrillated fiber (CNF) substrate, which is a biobased and biodegradable platform, with transferrable single crystalline Si nanomembrane (Si NM), enables the realization of truly biodegradable, flexible, and high performance devices. Double-gate flexible Si NM TFTs built on a CNF substrate have shown an electron mobility of 160 cm2/V·s and fT and fmax of 4.9 GHz and 10.6 GHz, respectively. This demonstration proves the microwave frequency capability and, considering today's wide spread use of wireless devices, thus indicates the much wider utility of CNF substrates than that has been demonstrated before. The demonstration may also pave the way toward portable green devices that would generate less persistent waste and save more valuable resources.

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Section: à3mentioning

confidence: 99%

Microwave flexible transistors on cellulose nanofibrillated fiber substrates

Seo

Chang

Lee

et al. 2015

Applied Physics Letters

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“…Equations (4)- (6) predict that the existence of neutral body may cause the resistance curves regarding , and frequency-dependent and explain the anomalous SOI behavior in Fig. 2.…”

Section: Resultsmentioning

confidence: 99%

On the RF Extrinsic Resistance Extraction for Partially-Depleted SOI MOSFETs

Wang

Chen

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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Abstract-We have investigated the radio frequency (RF) extrinsic resistance extraction for partially-depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Although the thick buried oxide in SOI devices can block the substrate coupling, the SOI neutral-body coupling effect is significant for RF applications. An equivalent circuit considering this effect has been proposed. Based on this equivalent circuit, a new model capturing the frequency dependence of extrinsic resistances has been derived. After considering the impact of quasi-neutral body, we have developed a physically accurate RF extrinsic resistance extraction methodology for PD SOI MOSFETs.Index Terms-Metal-oxide-semiconductor field effect transistors (MOSFETs), radio frequency (RF), resistance extraction, silicon-on-insulator (SOI) technology.

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“…Following these very good performances, extrinsic and intrinsic elements (see the SSEC presented on Fig. 4) have been extracted following methodologies described in [4][5][6][7]. Note that R extD /R extS values are in line with predicted ITRS.…”

Section: B Hf Performancesmentioning

confidence: 99%

Small signal and HF noise performance of 45 nm CMOS technology in mmW range

Poulain

Waldhoff

Gloria

et al. 2011

2011 IEEE Radio Frequency Integrated Circuits Symposium

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The development of applications in millimeter wave range (mmW) during the last decade is strongly related to continuous progress of Si Technology, which kept on evolving through aggressive transistor gate length down-scaling. In this context, this paper aims to present DC, small signal and noise performance up mmW range of recently developed 45-nm bulk CMOS Technology. For this purpose, S parameters were measured up to 67 GHz, a high frequency (HF) noise model was extracted in 6-40 GHz frequency range, and its accuracy verified through a comparison with the noise figure measured in W band with a 50 Ω impedance set at the transistor. The technology offers f T , f MAX respectively of 200 and 300 GHz in line with up-to-date published results for a 45 nm CMOS Technology. At the meantime, a minimum noise figure of 4.5 dB at 94 GHz is demonstrated (verified through W band noise measurements).Index Terms -Millimeter wave measurement, CMOS 45nm, Sparameters, small signal model, noise model.

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Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs

Cited by 52 publications

References 5 publications

Microwave flexible transistors on cellulose nanofibrillated fiber substrates

Microwave flexible transistors on cellulose nanofibrillated fiber substrates

On the RF Extrinsic Resistance Extraction for Partially-Depleted SOI MOSFETs

Small signal and HF noise performance of 45 nm CMOS technology in mmW range

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