Direct fabrication of arrays of Cu(In,Ga)Se2 micro solar cells by sputtering for micro-concentrator photovoltaics

Poeira, Ricardo G.; Pérez-Rodríguez, Ana; Prot, Aubin J.C. M.; Alves, Marina; Dale, Phillip J.; Sadewasser, Sascha

doi:10.1016/j.matdes.2023.111597

Cited by 5 publications

(3 citation statements)

References 24 publications

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“…Thermal annealing was introduced prior to selenization to remove any possible photoresist incorporated into the CIG micro-dot during sputtering [ 30 ], to improve the precursor quality. Hence, the sample was placed inside a vacuum pot and placed on a heating plate.…”

Section: Methodsmentioning

confidence: 99%

“…Subsequently, the resist was removed by lift-off with acetone followed by plasma asher treatment to eliminate any residual photoresist, leaving the SiOx layer with the CIG micro-dots. To prevent Mo oxidation, which starts at 300 °C, a low-temperature plasma asher process was employed Thermal annealing was introduced prior to selenization to remove any possible photoresist incorporated into the CIG micro-dot during sputtering [30], to improve the precursor quality. Hence, the sample was placed inside a vacuum pot and placed on a heating plate.…”

Section: Cig Precursor Deposition Followed By 2-stage Selenizationmentioning

confidence: 99%

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Fabrication of Pre-Structured Substrates and Growth of CIGS Micro-Absorbers

Alves,

Anacleto,

Teixeira

et al. 2024

Nanomaterials

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Second-generation thin-film Cu(In, Ga)Se2 (CIGS) solar cells are a well-established photovoltaic technology with a record power conversion efficiency of 23.6%. However, their reliance on critical raw materials, such as In and Ga, requires new approaches to reduce the amount of critical raw materials employed. The micro-concentrator concept involves the combination of thin-film photovoltaic technology with concentrator photovoltaic technology. This approach reduces the size of the solar cell to the micrometer range and uses optical concentration to collect sunlight from a larger area, focusing it onto micro solar cells. This work is devoted to the development of a process for manufacturing pre-structured substrates with regular arrays of holes with 200 and 250 µm diameters inside a SiOx insulating matrix. Subsequently, a Cu–In–Ga precursor is deposited by sputtering, followed by photoresist lift-off and the application of a Cu–In–Ga thermal annealing at 500 °C to improve precursor quality and assess pre-structured substrate stability under elevated temperatures. Finally, a two-stage selenization process leads to the formation of CIGS absorber micro-dots. This study presents in detail the fabrication process and explores the feasibility of a bottom-up approach using pre-structured substrates, addressing challenges encountered during fabrication and providing insights for future improvements in CIGS absorber materials.

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Section: Methodsmentioning

confidence: 99%

Section: Cig Precursor Deposition Followed By 2-stage Selenizationmentioning

confidence: 99%

Fabrication of Pre-Structured Substrates and Growth of CIGS Micro-Absorbers

Alves,

Anacleto,

Teixeira

et al. 2024

Nanomaterials

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“…In addition, combined methods are becoming popular, such as electrochemical etching with simultaneous deposition and a sol-gel method with thermal annealing. In this case, such a problem arises as the control of the content of Cu and In metals [33,34]. This can lead to excessive conductivity of the obtained layers, which nega-NON-VACUUM DESIGN OF CuGaxIn1-xSe2 FILMS FOR SOLAR ENERGY APPLICATIONS 595 tively affects the efficiency of photovoltaic energy converters based on Cu(In, Ga)Se2 structures [35,36].…”

Section: Introductionmentioning

confidence: 99%

Non-Vacuum Design of СuGa$_{x}$In$_{1-x}$Se$_{2}$ Films for Solar Energy Applications

Kovachov,

Tikhovod,

Kalenyk

et al. 2023

Metallofiz. Noveishie Tekhnol.

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The study reports on a non-vacuum synthesis method for CuGaхIn1-хSe2 films for solar energy applications. The films are formed by pulverising chlorides of indium, gallium, and cuprum with selenious acid. To optimise the blend composition of films, it is proposed to age the obtained structure in a sodium chloride solution and to carry out additional selenization of the surface in a diffusion furnace. The resulting layers are investigated using SEM, EDX, XRD, and Raman methods. As determined, the film is a polycrystalline structure of chalcopyrite CuGa0.6In0.4Se2 with agglomerates of porous crystallites. Secondary phases are not detected. The proposed method does not require a vacuum, and it is simple and inexpensive that opens the prospect of using it on an industrial scale for the synthesis of CuхGaIn1-хSe2 metal films.

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