Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals

Abstract

. (2016) Direct fabrication of functional ultrathin single-crystal nanowires from quasi-one-dimensional van der Waals crystals. Nano Letters. Permanent WRAP URL:http://wrap.warwick.ac.uk/81687 Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-for profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way. Publisher's statement:"This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work http://pubs.acs.org/page/policy/articlesonrequest/index.html ." A note on versions:The version presented here may differ from the published version or, version of record, if you wish to cite this item you are advised to consult the publisher's version. Please see the 'permanent WRAP URL above for details on accessing the published version and note that access may require a subscription. A functional logic gate consisting of both n-type Ta2Pd3Se8 and p-type Ta2Pt3Se8 field-effect

1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

“…The extension of this idea to 1D van der Waals materials may open a new gate for identification of experimentally feasible 1D materials as well. However, to the best of our knowledge, only one example in Ta2Pd3Se8 has been found . Here, we show an ab initio calculation evidence of three novel 1D V‐VI‐VII compounds, SbSeI, SbSBr, and SbSI, with high stability and desired electronic properties.…”

“…However, to the best of our knowledge, only one example in Ta2Pd3Se8 has been found. [13] Here, we show an ab initio calculation evidence of three novel 1D V-VI-VII compounds, SbSeI, SbSBr, and SbSI, with high stability and desired electronic properties.…”

Pseudo-monocrystalline properties of cylindrical nanowires confinedly grown by electrodeposition in nanoporous alumina templates

“…39 In fact, the formation of single-crystal phase nanowires and nanotubes under certain conditions of synthesis has been reported by several research teams, 12,40,41 and the crystalline properties have been determined by local studies using selected-area electron diffraction (SAED) and, in the case of NWs with diameters smaller than 50 nm, high resolution transmission electron microscopy (HRTEM) techniques were employed. 12,42 These characterization methods have the great advantage to perform local analyses that allow the study of a selected area of an individual NW. However, to obtain information about the crystalline properties of the total NW and to determine whether it is actually a single crystal, these studies should be carried out not only in a local region of the NW or along the long axis of the NW, as is usually reported in the literature, but also by rotating the nanowire and analyzing it from different tilt angles, and even performing these studies viewing the NW on its top end.…”

Effects of Applied Voltages on the Charge Transport Properties in a ZnO Nanowire Field Effect Transistor

“…In contrast, in the low-temperature region (4-100 K), the carrier conduction is mainly attributed to VRH, which exhibits charge transport through the trap states near the Fermi level. According to previous reports [23,[26][27][28][29][30], the VRH conduction can be expected due to charge trapping at localized states in semiconducting nanomaterials at low applied bias and low temperature where the Fermi level lies in localized sates within a band gap. The conductance following the three-dimensional (3D) VRH mechanism can be expressed by the following equation [25,31,32]…”