Direct growth of graphene nanowalls on the crystalline silicon for solar cells

Liu, Jian; Sun, Wentao; Wei, Dapeng; Song, Xianlin; Jiao, Tianpeng; He, Shixuan; Zhang, Wei; Du, Chunlei

doi:10.1063/1.4907284

Cited by 43 publications

(27 citation statements)

References 24 publications

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“…existence of few layers of graphene sheets with random stacking order in agreement with previous work [24,25]. This observation is also consistent with the high resolution transmission electron microscopy (HRTEM) image of GNWs, as shown in in Figure 3…”

Section: Electrical Characterizationsupporting

confidence: 92%

“…Several layers of graphene/graphite sheets with an interplanar spacing of 0.35 nm were observed, confirming the GNWs are made of several layers of graphene [12,[19][20][21]. existence of few layers of graphene sheets with random stacking order in agreement with previous work [24,25]. This observation is also consistent with the high resolution transmission electron microscopy (HRTEM) image of GNWs, as shown in in Figure 3…”

Section: Materials Characterizationsupporting

confidence: 90%

“…Here, the L a value of the GNW was estimated to be~7.5 nm for the I G /I D ratio of 0.625 (or I D /I G ratio of 1.6), which is comparable to typical GNWs for thermal management [23]. An I 2D /I G ratio of~1.0 indicates the existence of few layers of graphene sheets with random stacking order in agreement with previous work [24,25]. This observation is also consistent with the high resolution transmission electron microscopy (HRTEM) image of GNWs, as shown in in Figure 3a,b.…”

Section: Materials Characterizationsupporting

confidence: 89%

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High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

et al. 2019

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Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi2 as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.

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Section: Electrical Characterizationsupporting

confidence: 92%

Section: Materials Characterizationsupporting

confidence: 90%

Section: Materials Characterizationsupporting

confidence: 89%

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High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

et al. 2019

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“…So far, monocrystalline Gr can be directly grown on Ge and Ge/Si substrate . Liu et al successfully grew Gr nanowalls directly on Si substrate with plasma‐enhanced CVD and observed photovoltaic effect . Still, growth of monolayer Gr directly on Si substrate by CVD remains unsolved.…”

Section: Discussionmentioning

confidence: 99%

Progress of Graphene–Silicon Heterojunction Photovoltaic Devices

Huang

Cong

et al. 2018

Adv Materials Inter

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Solar cells fabricated with the most dominant material in industry, silicon (Si), developed rapidly in the recent years. Traditional Si solar cells require a complex process of fabricating junction. Thanks to its exotic electrical and optical properties, graphene (Gr) has attracted tremendous research interest in optoelectronic device applications, e.g., solar cells. The Gr/Si solar cell can be achieved by a simple room‐temperature transfer technique, which exhibits great potential application in photovoltaics. Currently, many researchers focus on the strategies to dope the Gr for the cell efficiency improvement, from 1.65% to 16.2%. Although great progress has been made, there are still some key issues to be solved on the way to the commercialization of Gr/Si solar cells. Here, the recent progress in the development of Gr/Si solar cells is comprehensively reviewed, and the road map of Gr/Si solar cell techniques in the future is discussed.

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“…Although high efficiencies have been obtained, it is highly necessary to develop a method of direct growth on Si and apply it to solar cells for practical production. Liu et al reported a direct growth method for a graphene nanowall (GNW) structure on Si for solar cells, and they achieved a PCE of up to 5.1% after chemical doping . Jiao et al used a plasma‐enhanced CVD (PECVD) method to directly grow GNWs on a Si substrate and reported a maximum efficiency of 6.6% with a cell area of 2.5 mm 2 .…”

Section: Direct Growth Of Graphene On the Surface Of Si And Its Applimentioning

confidence: 99%

Graphene on Group‐IV Elementary Semiconductors: The Direct Growth Approach and Its Applications

et al. 2019

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Since the first development of large‐area graphene synthesis by the chemical vapor deposition (CVD) method in 2009, CVD‐graphene has been considered to be a key material in the future electronics, energy, and display industries, which require transparent, flexible, and stretchable characteristics. Although many graphene‐based prototype applications have been demonstrated, several important issues must be addressed in order for them to be compatible with current complementary metal‐oxide‐semiconductor (CMOS)‐based manufacturing processes. In particular, metal contamination and mechanical damage, caused by the metal catalyst for graphene growth, are known to cause severe and irreversible deterioration in the performance of devices. The most effective way to solve the problems is to grow the graphene directly on the semiconductor substrate. Herein, recent advances in the direct growth of graphene on group‐IV semiconductors are reviewed, focusing mainly on the growth mechanism and initial growth behavior when graphene is synthesized on Si and Ge. Furthermore, recent progress in the device applications of graphene with Si and Ge are presented. Finally, perspectives for future research in graphene with a semiconductor are discussed.

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Direct growth of graphene nanowalls on the crystalline silicon for solar cells

Cited by 43 publications

References 24 publications

High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

Progress of Graphene–Silicon Heterojunction Photovoltaic Devices

Graphene on Group‐IV Elementary Semiconductors: The Direct Growth Approach and Its Applications

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