Direct Growth of Hexagonal Boron Nitride on Photonic Chips for High-Throughput Characterization

Glushkov, Evgenii; Mendelson, Noah; Chernev, Andrey; Ritika, Ritika; Lihter, Martina; Zamani, Reza; Navikas, Vytautas; Aharonovich, Igor; Radenović, Aleksandra

doi:10.1021/acsphotonics.1c00165

Cited by 16 publications

(12 citation statements)

References 42 publications

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“…It is inspired by mechanically exfoliated hBN layers used in a previous study [59]. The mechanical exfoliation of hBN is not scalable, and CVD growth of hBN requires exceedingly high temperatures (≈ 1000 °C) [54,55]. Therefore, we coated the second set of nominally identical samples with a protective dielectric layer using atomic layer deposition (ALD) [62][63][64][65][66][67] before the CVD process.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore this approach is assumed to be compatible with established CMOS processes for silicon nanostructures. Although the growth temperature for hBN is much higher compared to TMDs (≈ 1000 °C) [53,54], recent work demonstrated the direct growth of hBN on photonic chips [55]. However, hBN is a wide-gap dielectric, and electro-optical functionalization is thus difficult [56].…”

Section: Introductionmentioning

confidence: 99%

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Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides

Kuppadakkath¹,

Najafidehaghani²,

Gan³

et al. 2022

Preprint

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We report for the first time the direct growth of Molybdenum disulfide (MoS 2 ) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals materials grow conformally across the curves, edges, and the silicon-SiO 2 interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO 2 ) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides

Kuppadakkath¹,

Najafidehaghani²,

Gan³

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…To transfer the 2D material from the growth substrate to the chip without contamination, Glushkov et al [82] grew a widely used 2D material (hexagonal boron nitride, hBN) on silicon nitride chips directly, and performed the optical characterization of defects in the intact as-grown material. In their investigation, the direct growth approach was compared with the standard wet transfer method to confirm the clear advantages of the direct growth.…”

Section: Two-dimensional Materialsmentioning

confidence: 99%

Chip-Scale Quantum Emitters

Ghamsari

2021

Quantum Reports

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Integration of chip-scale quantum technology was the main aim of this study. First, the recent progress on silicon-based photonic integrated circuits is surveyed, and then it is shown that silicon integrated quantum photonics can be considered a compelling platform for the future of quantum technologies. Among subsections of quantum technology, quantum emitters were selected as the object, and different quantum emitters such as quantum dots, 2D materials, and carbon nanotubes are introduced. Later on, the most recent progress is highlighted to provide an extensive overview of the development of chip-scale quantum emitters. It seems that the next step towards the practical application of quantum emitters is to generate position-controlled quantum light sources. Among developed processes, it can be recognized that droplet–epitaxial QD growth has a promising future for the preparation of chip-scale quantum emitters.

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“…Integration of single photon emitters (SPEs) with photonic circuits is crucial, as it enables scalable components packaged on a single chip. In this regard, it is important not only to generate SPEs on a chip, but also to demonstrate routing of single photons, which is commonly achieved by photonic waveguides. − For layered van der Waals (vdW) materials, the most common approach has been the hybrid one where the vdW host of the quantum emitters is positioned on top of a foreign cavity fabricated from a different material. − As such, hBN emitters have been coupled to silicon nitride microdisks, waveguides and cavities − However, the monolithic approach, whereby the photonic components and the emitters are fabricated from the same material, can provide substantial benefits such as higher coupling efficiencies and less stringent fabrication steps …”

mentioning

confidence: 99%

Integration of hBN Quantum Emitters in Monolithically Fabricated Waveguides

Fröch

Nonahal

et al. 2021

ACS Photonics

Self Cite

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Hexagonal boron nitride (hBN) is gaining interest for potential applications in integrated quantum nanophotonics. Yet, to establish hBN as an integrated photonic platform several cornerstones must be established, including the integration and coupling of quantum emitters to photonic waveguides. Supported by simulations, we study the approach of monolithic integration, which is expected to have coupling efficiencies that are ~ 4 times higher than those of a conventional hybrid stacking strategy. We then demonstrate the fabrication of such devices from hBN and showcase the successful integration of hBN single photon emitters with a monolithic waveguide. We demonstrate coupling of single photons from the quantum emitters to the waveguide modes and on-chip detection. Our results build a general framework for monolithically integrated hBN single photon emitter and will facilitate future works towards on-chip integrated quantum photonics with hBN.

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Direct Growth of Hexagonal Boron Nitride on Photonic Chips for High-Throughput Characterization

Cited by 16 publications

References 42 publications

Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides

Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides

Chip-Scale Quantum Emitters

Integration of hBN Quantum Emitters in Monolithically Fabricated Waveguides

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