Direct Growth of High-Quality Graphene on High-κ Dielectric SrTiO<sub>3</sub> Substrates

Sun, Jingyu; Gao, Teng; Song, Xiuju; Zhao, Yijiao; Lin, Yuanwei; Wang, Huichao; Ma, Donglin; Chen, Yubin; Xiang, Wenfeng; Wang, Jian; Zhang, Yanfeng; Liu, Zhongfan

doi:10.1021/ja5022602

Cited by 138 publications

(135 citation statements)

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“…The floating Cu and H atoms could provide a remote catalyzation and a lower activation energy for pyrolysis of the CH 4 . And a monolayer graphene with carrier motilities of ≈870–1050 cm 2 V −1 s −1 could be synthesized on single crystal SrTiO 3 35. The photograph showed its uniformity and light transparency ( Figure 3 a).…”

Section: Properties and Preparationmentioning

confidence: 99%

“…This process would bring contamination, wrinkles and cracks to the graphene film 26, 27. To synthesize such films, the compatible target substrates in transparent conductors are silica,28, 29, 30 quartz,31, 32 sapphire,33 and other insulated transparent substrates, such as solid glasses34 and high‐ κ SrTiO 3 substrates 35. Chiu at al.…”

Section: Properties and Preparationmentioning

confidence: 99%

Section: Properties and Preparationmentioning

confidence: 99%

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Human‐Like Sensing and Reflexes of Graphene‐Based Films

et al. 2016

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Humans have numerous senses, wherein vision, hearing, smell, taste, and touch are considered as the five conventionally acknowledged senses. Triggered by light, sound, or other physical stimulations, the sensory organs of human body are excited, leading to the transformation of the afferent energy into neural activity. Also converting other signals into electronical signals, graphene‐based film shows its inherent advantages in responding to the tiny stimulations. In this review, the human‐like senses and reflexes of graphene‐based films are presented. The review starts with the brief discussions about the preparation and optimization of graphene‐based film, as where as its new progress in synthesis method, transfer operation, film‐formation technologies and optimization techniques. Various human‐like senses of graphene‐based film and their recent advancements are then summarized, including light‐sensitive devices, acoustic devices, gas sensors, biomolecules and wearable devices. Similar to the reflex action of humans, graphene‐based film also exhibits reflex when under thermal radiation and light actuation. Finally, the current challenges associated with human‐like applications are discussed to help guide the future research on graphene films. At last, the future opportunities lie in the new applicable human‐like senses and the integration of multiple senses that can raise a revolution in bionic devices.

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Section: Properties and Preparationmentioning

confidence: 99%

Section: Properties and Preparationmentioning

confidence: 99%

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Human‐Like Sensing and Reflexes of Graphene‐Based Films

et al. 2016

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“…[1][2][3][4][5][6] Among them, field effect transistors (FETs) as the fundamental building units of modern electronic systems have been extensively studied using graphene for channel material fabrication. [7][8][9][10] Current chemical vapor deposition approaches www.advelectronicmat. de Furthermore, the heterojunction in the graphene scaffold−ZrO 2 nanofilm was investigated by fabricating it into Schottky barrier transistors, which shows rectification behavior.…”

Section: Doi: 101002/aelm201700424mentioning

confidence: 99%

Field Effect Transistors Based on In Situ Fabricated Graphene Scaffold–ZrO₂ Nanofilms

Pang

Chen

Wang

et al. 2017

Adv Elect Materials

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using Cu [11] or Ni [12] as metal catalysts could be a preferred strategy for largescale production of uniform graphene with large domain size. However, it usually requires an additional transfer process for fabricating graphene onto substrates, which is tedious and may affect the physical properties of graphene. [13] On the other hand, dielectric materials are of crucial importance in FETs because improved capacitance could be achieved by using gate dielectric layer for sufficient resistance (reduced gate leakage). [14,15] High-k dielectrics such as Al 2 O 3 , [16,17] HfO 2 , [18,19] and ZrO 2 [20,21] have been extensively used for the graphene-based FETs with nanometer regime, and emerged as potential alternate gate insulators replacing low-k SiO 2 in electronic devices. Therefore, for FETs, direct fabrication of graphene materials on top of high-k dielectrics, such as ZrO 2 , without further transferring process will be of great importance.Previously, we fabricated graphene scaffold−ZrO 2 nanofilms in situ on the SiO 2 substrates by spin coating and thermal annealing of a Zr-based metal-organic oligomer (Figure 1a). [22] The obtained nanofilm possesses heterostructure with ultrathin carbon layer formed on top of the ZrO 2 layer. The carbon layer shows a low sheet resistance of 17 kΩ per square, corresponding to 3197 S m −1 in electrical conductivity. In this study, we further investigated the detailed structural and electric characteristics of the obtained graphene scaffold−ZrO 2 nanofilms. Small angle X-ray reflectivity (XRR) confirms the heterostructure of the nanofilm, and a typical nanofilm is composed of ≈3.5 nm of carbon on top of ≈21.4 nm ZrO 2 layer. The resulting nanofilm on Si substrate shows a dielectric constant of ≈15.7, which is comparable to other high-k materials such as Y 2 O 3 (≈15). The developed in situ strategy could be further utilized to build multilayer heterostructural films, such as graphene-ZrO 2 / Al 2 O 3 nanofilms on Si substrate, providing potential opportunities in building multilayer devices with various substrates. Further fabricating it into ionic liquid-gated electric double layer transistors (EDLTs) demonstrated the p-type channel characteristic of the graphene scaffold, with a current on-off ratio (I on /I off ) of ≈2.1. With these desired structural and electric characteristics, we successfully integrated the graphene scaffold− ZrO 2 nanofilm into FETs with lateral architecture by applying either shadow masks or photolithography during electrode deposition, and these p-type FETs show notable I on /I off ratio.

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“…Attention has naturally focused on lattice-commensurate substrates, particularly BN. [1][2][3] However, growth on incommensurate polar oxides has also received attention, [4][5][6][7][8][9] including substrates such as MgO 4,[7][8][9] , Co 3 O 4 (111) 5 , and Al 2 O 3 6 . Such incommensurate oxides are attractive because (a) this route to graphene growth would potentially make available a broader variety of substrates for various applications, and (b) substrate-graphene interactions might lead to novel graphene properties, such as a substrate-induced band gap, 9 or induced spin polarization of graphene.…”

Section: Introductionmentioning

confidence: 99%

Ordered three-fold symmetric graphene oxide/buckled graphene/graphene heterostructures on MgO(111) by carbon molecular beam epitaxy

et al. 2018

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KEYWORDSphotoemission, electron energy loss, low energy electron diffraction, density functional theory ABSTRACT Theory and experiment demonstrate the direct growth of a graphene oxide/buckled graphene/graphene heterostructure on an incommensurate MgO(111) substrate. X-ray photoelectron spectroscopy, electron energy loss, Auger electron spectroscopy, low energy electron diffraction, Raman spectroscopy and first-principles density functional theory (DFT) calculations all demonstrate that carbon molecular beam epitaxy on either a hydroxylated MgO(111) single crystal or a heavily twinned thin film surface at 850 K yields an initial C layer of highly ordered graphene oxide with C 3v symmetry. A 5x5 unit cell of carbon, with one missing atom, forms on a 4x4 unit cell of MgO, with the three C atoms surrounding the C vacancy surface forming covalent C-O bonds to substrate oxide sites. This leads to a bowed graphene-oxide with slightly modified D and G Raman lines and a calculated band gap of 0.36 eV. Continued C growth results in the second layer of graphene that is stacked AB with respect to the first layer and buckled conformably with the first layer while maintaining C 3v symmetry, lattice spacing and azimuthal orientation with the first layer. Carbon growth beyond the second layer yields graphene in azimuthal registry with the first two C layers, but with graphene-characteristic lattice spacing and πàπ* loss feature. This 3 rd layer is also p-type, as indicated by the 5.6 eV energy loss feature. The significant sp 3 character and C 3v symmetry of such heterostructures suggest that spin-orbit coupling is enabled, with implications for spintronics and other device applications.2

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Direct Growth of High-Quality Graphene on High-κ Dielectric SrTiO₃ Substrates

Cited by 138 publications

References 28 publications

Human‐Like Sensing and Reflexes of Graphene‐Based Films

Human‐Like Sensing and Reflexes of Graphene‐Based Films

Field Effect Transistors Based on In Situ Fabricated Graphene Scaffold–ZrO₂ Nanofilms

Ordered three-fold symmetric graphene oxide/buckled graphene/graphene heterostructures on MgO(111) by carbon molecular beam epitaxy

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Direct Growth of High-Quality Graphene on High-κ Dielectric SrTiO3 Substrates

Cited by 138 publications

References 28 publications

Human‐Like Sensing and Reflexes of Graphene‐Based Films

Human‐Like Sensing and Reflexes of Graphene‐Based Films

Field Effect Transistors Based on In Situ Fabricated Graphene Scaffold–ZrO2 Nanofilms

Ordered three-fold symmetric graphene oxide/buckled graphene/graphene heterostructures on MgO(111) by carbon molecular beam epitaxy

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Product

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Direct Growth of High-Quality Graphene on High-κ Dielectric SrTiO₃ Substrates

Field Effect Transistors Based on In Situ Fabricated Graphene Scaffold–ZrO₂ Nanofilms