Direct Growth of High-Quality InxGa1-xAs Strained Layers on Misoriented GaAs Substrates Grown by Metalorganic Chemical Vapor Deposition

Liao, Chin-I; Yarn, Kao-Feng; Lin, Chien Lien; Wang, Yeong-Her

doi:10.1143/jjap.41.1247

Cited by 9 publications

(4 citation statements)

References 14 publications

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“…For InGaAs layers with In composition of less than 0.35, the growth temperature in MOVPE was typically 600 1C, where high quality GaAs layers were grown [4,5]. However, low temperature growth at less than 500 1C was reported as effective for InGaAs layers with In composition of 0.5 [6,7]. InAs with threading dislocation density of 1.6 Â 10 7 cm À2 can be grown by MOVPE at 400 1C on GaAs substrates using graded buffer layers [8].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of threading dislocation density in In0.2Ga0.8As layers grown on GaAs substrates by metalorganic-vapor phase epitaxy

Takano¹,

Kobayashi²,

Shirakata³

et al. 2005

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Temperature dependence of threading dislocation density in In0.2Ga0.8As layers grown on GaAs substrates by metalorganic-vapor phase epitaxy

Takano¹,

Kobayashi²,

Shirakata³

et al. 2005

Journal of Crystal Growth

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“…The studied films were grown by the MOCVD system [8] on a (100)-oriented Si-doped GaAs substrate. The epitaxial layers were grown on a substrate at 850 0 C with a growth rate about 0.8um/hr.…”

Section: Methodsmentioning

confidence: 99%

GaAs/InGaAs Optoelectronic Switch for Triple-Logic Applications

Yarn

Yang

Chang

2012

AMR

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A new GaAs/InGaAs triangular barrier optoelectronic switch combined with tri-state characteristic is fabricated and demonstrated. Two GaAs/InGaAs barriers are employed to provide potential barriers for electron thermionic emission and hole confinement, respectively. Applying a sufficient DC voltage to this device, a double S-shaped negative differential resistance (NDR) phenomenon with nearly equal switching voltage difference is appeared at room temperature. This unique NDR property can be introduced to triple stable regions into the device circuit design. Based on a proper circuit design with suitable load line, the studied device has potential for triple-logic applications.

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“…The epitaxial films of the UV LED structures were grown in a MOCVD reactor [13]. NH 3 and MO-sources flow were separated to reduce undesirable parastic reaction.…”

Section: Methodsmentioning

confidence: 99%

UV LEDs with Low Dislocation GaN Buffer Layers Grown by MOCVD

Yarn¹,

Chang

Hsieh

2012

AMR

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New MOCVD grown UV (ultra-violet) LEDs using low dislocation density GaN buffer layers on sapphire have been studied. Two different LED characteristics of GaN substrates, i.e. 5um-thick and 20um-thick buffer layers, on sapphire are compared with each other. The enhanced LED characteristics show ~29.5% reduction in current-voltage resistance, ~8.5% reduction in turn-on voltage and output power saturation at higher current. Better GaN buffer quality and heat dissipation due to the lower defect density are believed to the enhanced reason.

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Direct Growth of High-Quality In_xGa_1-xAs Strained Layers on Misoriented GaAs Substrates Grown by Metalorganic Chemical Vapor Deposition

Cited by 9 publications

References 14 publications

Temperature dependence of threading dislocation density in In0.2Ga0.8As layers grown on GaAs substrates by metalorganic-vapor phase epitaxy

Temperature dependence of threading dislocation density in In0.2Ga0.8As layers grown on GaAs substrates by metalorganic-vapor phase epitaxy

GaAs/InGaAs Optoelectronic Switch for Triple-Logic Applications

UV LEDs with Low Dislocation GaN Buffer Layers Grown by MOCVD

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