Direct Growth of Perovskite Crystals on Metallic Electrodes for High‐Performance Electronic and Optoelectronic Devices

Abstract

Metal halide perovskite has attracted enhanced interest for its diverse electronic and optoelectronic applications. However, the fabrication of micro‐ or nanoscale crystalline perovskite functional devices remains a great challenge due to the fragility, solvent, and heat sensitivity of perovskite crystals. Here, a strategy is proposed to fabricate electronic and optoelectronic devices by directly growing perovskite crystals on microscale metallic structures in liquid phase. The well‐contacted perovskite/metal interfaces ensure these heterostructures serve as high‐performance field effect transistors (FETs) and excellent photodetector devices. When serving as an FET, the on/off ratio is as large as 106 and the mobility reaches up to ≈2.3 cm2 V−1 s−1. A photodetector is displayed with high photoconductive switching ratio of ≈106 and short response time of ≈4 ms. Furthermore, the photoconductive response is proved to be band‐bending‐assisted separation of photoexcited carriers at the Schottky barrier of the silver and p‐type perovskites.

Highly Sensitive Ultraviolet and Visible Wavelength Sensor Composed of Two Identical Perovskite Nanofilm Photodetectors

“…[6] Furthermore, the tremendous progress in photovoltaic application has also inspired wide usage of perovskite semiconductors in other optoelectronic devices, including light-emitting diodes, lasers, and photosensors. [7][8][9][10][11][12] In particular, the photosensor that can distinguish color information of light is widely required in artificial visual systems to build colorful images, [13][14][15] visible light communication to transmit information, [16][17][18] microspectrometer to reconstruct broadband light [19][20][21] and so on.To realize the perovskite-based wavelength sensor, integration of efficient perovskite photodetectors (PDs) with high-purity optical filters or perovskitequantum-dot-embedded film filter with silicon-based PDs arrays have been studied. [19,22] However, these filter-assisted methods are very complicated in physical geometry, which to a large extent hinders the miniaturization of the device.…”

“…[6] Furthermore, the tremendous progress in photovoltaic application has also inspired wide usage of perovskite semiconductors in other optoelectronic devices, including light-emitting diodes, lasers, and photosensors. [7][8][9][10][11][12] In particular, the photosensor that can distinguish color information of light is widely required in artificial visual systems to build colorful images, [13][14][15] visible light communication to transmit information, [16][17][18] microspectrometer to reconstruct broadband light [19][20][21] and so on.…”

A Vertical PN Diode Constructed of MoS2/CsPbBr3 Heterostructure for High‐Performance Optoelectronics

“…This is because strong band bending (built‐in potential) mainly locates at the PN junction area, which is the main driving force for photoinduced carriers’ separation. [ 23 ] The charge transfer between MoS 2 and CsPbBr 3 can be illustrated in the view of band alignment in Figure 2e. The bottom edge of conduction band and the top edge of valance band of MoS 2 [ 24 ] and CsPbBr 3 [ 25 ] are labeled in Figure 2e.…”

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

“…[163] Liu et al grew CsPbBr 3 single crystals in the orthorhombic phase directly from a DMF solution. [164] The authors used silver particles as nucleation centers and were able to bridge two pre-patterned silver electrodes on Si/SiO 2 by utilizing capillary forces during the growth, while pressing a polydimethylsiloxane plate onto the solution during the crystal growth. The resulting FETs exhibited p-type transport characteristics with linear mobilities in the range of μ h = 0.5-2.3 cm 2 V -1 s -1 at 150 K. [164] Another study exploring charge transport in the orthorhombic phase of CsPbBr 3 was conducted by Zou et al, who grew micrometer thick CsPbBr 3 platelets on Si/SiO 2 substrates under capillary forces by melting a polyethylene terephthalate layer below a glass cover.…”

“…[ 164 ] The authors used silver particles as nucleation centers and were able to bridge two pre‐patterned silver electrodes on Si/SiO 2 by utilizing capillary forces during the growth, while pressing a polydimethylsiloxane plate onto the solution during the crystal growth. The resulting FETs exhibited p‐type transport characteristics with linear mobilities in the range of μ h = 0.5–2.3 cm 2 V –1 s –1 at 150 K. [ 164 ] Another study exploring charge transport in the orthorhombic phase of CsPbBr 3 was conducted by Zou et al., who grew micrometer thick CsPbBr 3 platelets on Si/SiO 2 substrates under capillary forces by melting a polyethylene terephthalate layer below a glass cover. [ 165 ] Following the evaporation of gold electrodes, the BGTC FETs exhibited ambipolar charge transport at room temperature with electron transport dominating, with a saturation mobility of μ e = 0.19 cm 2 V –1 s –1 and a saturation hole mobility of μ h = 0.02 cm 2 V –1 s –1 .…”