Direct investigation on conducting nanofilaments in single-crystalline Ni/NiO core/shell nanodisk arrays

Abstract

We report resistive switching characteristics of single-crystalline Ni/NiO core/shell nanodisk arrays, in which the conducting filaments are highly localized on the surface of nanostructure. The local current distributions observed in such a single-grained nanodisk demonstrate that the contact area and the contact time between the conductive tip of conducting atomic force microscopy and the surface of nanodisk critically influence the voltage-stress-induced electroforming behaviors of nanofilaments in NiO switching nanoblocks. These contact parameters, such as the contact area and the contact time, are interpreted to the electrode size and the voltage-stress time for the formation of filaments in metal oxides.

Enhanced ethanol sensing performance of porous ultrathin NiO nanosheets with neck-connected networks

“…[1][2][3] Nickel oxide (NiO) is one member of the oxide semiconductors family with significant material qualities such as a relatively wide-band gap (E g = 3.6-4.0 eV), a considerable electrical conductivity change along with chemical reactions on the surface of materials etc, which makes it a good candidate for gas sensor applications. Nanoparticles, 4 nanowires, 5 nanotubes, 6 nanodisks, 7 nanosheets, 8 and complicated assembly structures of NiO have been successfully fabricated in past reports. 9,10 As is well known, the gas sensing performance is primarily affected by the morphology, dimension, specific surface area, grain size, pore size of inter-and intra-materials, and agglomeration of materials.…”

Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene

“…2a . We deposited NiO on Pt/Ti/SiO 2 /Si substrate using dc reactive sputtering method with the same condition of our previous works (See Materials and Transfer of Graphene in Materials and Methods section) 36 37 38 39 40 41 42 43 44 . After the transfer process, Pt top electrodes with a thickness of 100 nm and an area of 50 μm × 50 μm were fabricated on the GIM structure using dc sputtering method and conventional lift-off process.…”

Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition

“…Several works address proofof-principle memory element miniaturization because of the nanometric resolution achieved by C-AFM [239][240][241]. C-AFM also succeeded in the observation of conducting filaments in insulating matrices, such as TiO 2 [188,234,242], SrTiO 3 [24,139] and NiO [18,235,236,243], and in combination with other characterization techniques such as TEM [17,19] or TOF-SIMS [244][245][246]. A more detailed review is provided in reference [247].…”