Direct Laser Texturing for High-Efficiency Silicon Solar Cells

Zielke, Dimitri; Sylla, Diouldé; Neubert, T.; Brendel, Rolf; Schmidt, Jan

doi:10.1109/jphotov.2012.2228302

Cited by 34 publications

(21 citation statements)

References 22 publications

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“…1 More than 30% of incident light is reflected back into the atmosphere by crystalline silicon (c-Si) solar cells without an antireflective texture, which markedly decreases their conversion efficiency. In recent years, many antireflection structures, such as cone, 6 inverted pyramid, 7-10 honeycomb, 11 and V-groove, 12 have also been developed. However, the reflectance of such textures is seldom <10%.…”

Section: Introductionmentioning

confidence: 99%

Hydrophobic light-trapping structures fabricated on silicon surfaces by picosecond laser texturing and chemical etching

et al. 2015

J. Photon. Energy

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Light-trapping structures are fabricated on crystalline (100) silicon (c-Si) surfaces by picosecond (ps) laser irradiation followed by chemical etching. First, 1064-nm ps laser scanning is used to form micropore arrays on c-Si. The ps laser processing causes little reconsolidation of the silicon surface, which is beneficial to achieve precise etching. Control of the laser scanning interval, number of scans, and etching time gives a micro-nano hierarchical structure. In this hierarchical structure, the average diameter of the micropores is 25 to 30 μm, while the size of the finer nanostructures on the micropore inner walls ranges from dozens to hundreds of nanometers. Unlike traditional laser texturing techniques, the whole laser process is carried out without mask and photolithography. The reflectance of the c-Si surface with a micro-nano hierarchical structure is as low as 6% in the wavelength range from 400 to 1000 nm without coating. Moreover, the samples also show good hydrophobicity. This is a potential method to fabricate economical antireflective structures that are ideal for applications in c-Si solar cells and self-cleaning c-Si microelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Hydrophobic light-trapping structures fabricated on silicon surfaces by picosecond laser texturing and chemical etching

et al. 2015

J. Photon. Energy

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“…Various patterning schemes like nanoimprint lithography [3], interference lithography [4], laser texturing [5] and collodial lithography [6] have been reported for fabrication of inverted pyramidal structures in silicon. However, the throughput for these processes needs to be improved before it is put into commercial production [3].…”

Section: Introductionmentioning

confidence: 99%

Photolithography free inverted pyramidal texturing for solar cell applications

Sandeep

Kottantharayil

2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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We have demonstrated a novel process for the fabrication of inverted pyramidal structures on Silicon. The proposed technique does not use any photolithography step and is instead replaced by a thin film deposition step and thermal annealing. In this work, Inductively Coupled Plasma CVD(ICP-CVD) silicon nitride was used as the thin film. The blisters are formed upon annealing and the silicon nitride film remaining on the surface act as an etch mask for the texturization process which is carried out in alkaline solution. The impact of blistering process on the silicon wafer surface is reported. The role of silane flow, annealing temperature and time on the blistering shape, size and density is also reported.

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“…This necessitates the need for alternative techniques for texturing of silicon solar cells. Various patterning schemes like nanoimprint lithography [4], interference lithography [5], laser texturing [6], [7] and colloidal lithography [8] have been reported for the fabrication of inverted pyramidal structures in silicon. However, the throughput for these processes may need further improvement before it is put into commercial production [4], [7].…”

Section: Introductionmentioning

confidence: 99%

Inverted Pyramidal Texturing of Silicon Through Blisters in Silicon Nitride

Saseendran

Kottantharayil

2015

IEEE J. Photovoltaics

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We have demonstrated a novel process for the fabrication of inverted pyramidal structures on silicon. The proposed technique uses no photolithography step and is instead replaced by a thin-film deposition step and thermal annealing. In this paper, inductively coupled plasma CVD (ICP-CVD) silicon nitride was used as the thin film. Blisters were formed on the silicon nitride film upon annealing at 800 • C. The silicon nitride film remaining on the surface of the wafer acts as an etch mask for the texturization process, which is carried out in an alkaline solution. It was observed that only open blisters participated in the etch process, while closed blisters were resistant to the etching solution. It was observed that the gas flow ratio, annealing time, and temperature played an important role in determining the shape, size, and areal density of the blisters. By integrating an argon plasma pretreatment in the silicon nitride deposition process, surface coverage of 51% was obtained for lower annealing temperatures of 550 • C. Upon etching the sample in an alkaline solution, a weighted average reflectance of 17.3% was obtained, indicating the potential of this process. Index Terms-Hydrogen blistering, inverted pyramidal texturing, silicon nitride. 2156-3381

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Direct Laser Texturing for High-Efficiency Silicon Solar Cells

Cited by 34 publications

References 22 publications

Hydrophobic light-trapping structures fabricated on silicon surfaces by picosecond laser texturing and chemical etching

Hydrophobic light-trapping structures fabricated on silicon surfaces by picosecond laser texturing and chemical etching

Photolithography free inverted pyramidal texturing for solar cell applications

Inverted Pyramidal Texturing of Silicon Through Blisters in Silicon Nitride

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