Direct Liquid Injection Chemical Vapor Deposition

Astié, Vincent; Millon, C.; Decams, Jean-Manuel; AusrineBartasyte,

doi:10.5772/intechopen.80244

Cited by 8 publications

(7 citation statements)

References 84 publications

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“…FT-IR spectra were recorded as films of either neat compound (ligands) or Nujol mulls (derivatives 1−12) on KBr pellets using a Bruker Vector 22 spectrometer. 1 H, 13 C, 19 F, and 119 Sn NMR spectra were recorded on a Bruker AVANCE III 400 MHz spectrometer using Topspin software. All chemical shifts were measured in C 6 D 6 as a solvent.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

“…Colorless crystals suitable for X-ray analysis were obtained from a concentrated npentane solution at −20 °C. Yield: 1.4 g (82% 1 H, δ 1.12 (s, 12 H, CH 3 of F-dmamp), 1.20 (t, 6 H, J = 4.48 Hz, CH 3 of EtO), 2.61 (s, 4 H, NCH 2 ), 3.99 (s, 4 H, J = 6.6 Hz, CH 2 of EtO); 13 C, δ 31.6 (s, CH 3 of EtOH), 46.1 (s, CH 3 of F-dmamp), 57.6 (s, NCH 2 ) and 61.9 (s, CH 2 of EtOH); 19 F, δ −78.53; 119 Sn, δ −532 ppm.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped SnO₂ Thin Films

et al. 2020

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A series of asymmetric and potentially bidentate amino alcohols and amino fluoro alcohols (RNOH) having a different number of methyl/trifluoromethyl substituents at the α-carbon atom, [HOC(R1)(R2)CH2NMe2] (R1 = R2 = H (dmaeH); R1 = H, R2 = CH3 (dmapH); R1 = R2 = CH3 (dmampH); R1 = H, R2 = CF3 (F-dmapH); R1 = R2 = CF3 (F-dmampH)) have been used to develop new monomeric and heteroleptic tin(IV) amino(fluoro)alkoxides [Sn(OR)2(ORN)2] (R = Et, Pr i , Bu t ). These new complexes, which were thoroughly characterized by spectroscopy (IR and multinuclei NMR (1H, 13C, 19F, and 119Sn)) as well as single-crystal X-ray studies on representative samples, were investigated for their thermal behavior to determine their suitability as MOCVD precursors for the deposition of metal oxide thin films. The two most suitable compounds, [Sn(OBu t )2(dmamp)2] and [Sn(OBu t )2(F-dmamp)2], were used in a direct liquid injection chemical vapor deposition (DLI-CVD) process to deposit undoped SnO2 and F-doped SnO2 thin films, respectively, on silicon and quartz substrates. Film growth rates at different temperatures (from 400 to 700 °C), film thickness, crystalline quality, and surface morphology were investigated. The films deposited on quartz showed high transparency (above 80%) in the visible region and low carbon contamination on the surface (11–13% from XPS), which could easily be removed completely with 2 min of Ar+ sputtering.

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Section: ■ Experimental Sectionmentioning

confidence: 99%

Section: ■ Experimental Sectionmentioning

confidence: 99%

Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped SnO₂ Thin Films

et al. 2020

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“…In this work, we used a variant of the CVD technique involving Direct Liquid Injection (DLI) with metal-organic precursors. This technique allow to partially overcomes the issue of low volatility of heavy element precursors as REI ones [31][32][33] and helps having a better control over their constant feeding inside the reaction chamber. Europium ions doped in Y 2 O 3 were chosen among other REI in this study because they exhibit ultra-narrow optical homogeneous linewidths and long coherent times while the matrix is a simple cubic binary oxide.…”

Section: -Introductionmentioning

confidence: 99%

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

Harada

Ferrier

Serrano

et al. 2020

Journal of Applied Physics

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Rare earth ions hosted in solids are good candidates for quantum technologies due to their chemical stability and optical and spin transitions exhibiting long coherence lifetimes. While bulk oxide crystals are usually the preferred host material, the development of a scalable silicon-compatible thin film platform would be desirable. In this paper, we report on the growth of Y2(1−x)Eu2xO3 thin films on silicon in the full range of Eu3+ concentration by direct liquid injection chemical vapor deposition (CVD). Our sub-micrometer polycrystalline films with a strong-(111) texture were grown for all compositions into the bixbyite cubic phase. The variation of growth rates with temperature and flow indicated that deposition occurred through a mass-transport controlled regime. Optical assessment of the Eu-doped thin films showed inhomogeneous linewidths as narrow as 50 GHz and fluorescence lifetimes of 1 ms for the lowest concentrations. Finally, a spectral hole was successfully burned in a 200 nm-thin film with a 2% Eu doping leading to a homogeneous linewidth of 11 MHz. These values are still below those reported for bulk single crystals indicating that additional decoherence mechanisms exist in such nanometric films, which might be alleviated by further improvement of the crystalline quality. Nevertheless, these results pave the way to the use of CVD-grown Eu:Y2O3 thin films as a platform for integrated quantum devices.

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“…LaNiO 3 thin films were grown on (0112) R-sapphire, (100) Si, and (0112) LaAlO 3 substrates by three different metal organic chemical vapor deposition (MOCVD) methods: pulsed injection (PI) MOCVD [23,24], atmospheric pressure (AP) MOCVD [25], and commercial direct liquid injection (DLI) MOCVD (annealsys MC-100) [26,27]. The schematic representations of the used PIMOCVD, APMOCVD, and DLI-CVD reactors can be found in [22,28,29], respectively. In the case of DLI-CVD, prior to depositions, the substrates were cleaned in acetone and piranha solution (H 2 SO 4 + H 2 O 2 ), rinsed in deionized water, and then dried under N 2 gas flow.…”

Section: Methodsmentioning

confidence: 99%

Relationship Processing–Composition–Structure–Resistivity of LaNiO3 Thin Films Grown by Chemical Vapor Deposition Methods

et al. 2019

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Precision control of resistivity/conductivity of LaNiO3 (LNO) films is essential for their integration as electrodes in the functional heterostructures. This becomes possible if the relationship between processing parameters–composition–structure–resistivity is determined. LaNiO3 films were deposited by three different chemical vapor deposition methods using different precursor supply systems: direct liquid delivery, pulsed liquid injection, and aerosol generation. The possibilities to ameliorate the efficiency of precursor evaporation and of film growth were studied. The relationship between deposition conditions and composition was determined. Detailed analysis of the epitaxial growth of LNO films on cubic and trigonal substrates and the influence of the rhombohedral distortion on the microstructural quality was done. The resistivity of LaNiO3 films, grown by chemical vapor deposition, was mainly defined by microstructural defects and La/Ni composition. The high epitaxial quality LaNiO3/LaAlO3 films with nearly stoichiometric La/Ni ratio presented low resistivity, which was very close to that of bulk LaNiO3. Their annealing in oxygen atmosphere had little effect on the resistivity, which suggests a minor presence of oxygen vacancies in the as-grown films.

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Direct Liquid Injection Chemical Vapor Deposition

Cited by 8 publications

References 84 publications

Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped SnO₂ Thin Films

Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped SnO₂ Thin Films

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

Relationship Processing–Composition–Structure–Resistivity of LaNiO3 Thin Films Grown by Chemical Vapor Deposition Methods

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Direct Liquid Injection Chemical Vapor Deposition

Cited by 8 publications

References 84 publications

Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped SnO2 Thin Films

Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped SnO2 Thin Films

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

Relationship Processing–Composition–Structure–Resistivity of LaNiO3 Thin Films Grown by Chemical Vapor Deposition Methods

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Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped SnO₂ Thin Films

Heteroleptic Tin(IV) Aminoalkoxides and Aminofluoroalkoxides as MOCVD Precursors for Undoped and F-Doped SnO₂ Thin Films