2006
DOI: 10.1143/jjap.45.3133
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Direct Measurement of Offset Spacer Effect on Carrier Profiles in Sub-50 nm p-Metal Oxide Semiconductor Field-Effect Transistors

Abstract: We have directly measured the effect of the bottom shape in the offset spacer on the two-dimensional (2-D) carrier profiles of the sub-50 nm p-metal oxide semiconductor field-effect transistors (MOSFETs). It has been observed that the doping profile of the Sb pocket implanted with a high angle tilt is very sensitive to the bottom shape of the notched offset spacer. It has been confirmed that the Sb pocket deeply implanted leads to the decrease of 2 nm in the average overlap length of the extension region at a … Show more

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“…These methods can be classified into two types: detection of electric field distribution and detection of elemental distribution. Detection of electric fields has mainly been achieved by scanning probe microscopy (SPM) [2][3][4][5][6] and electron holography [7,8]. These methods can show the distribution of the parameters that depend on the electric field or inner potential caused by activated dopant atoms with a sub-nm spatial resolution, are useful for designing current fields, and can already be applied to both n-type and p-type implanted areas.…”
Section: Introductionmentioning
confidence: 99%
“…These methods can be classified into two types: detection of electric field distribution and detection of elemental distribution. Detection of electric fields has mainly been achieved by scanning probe microscopy (SPM) [2][3][4][5][6] and electron holography [7,8]. These methods can show the distribution of the parameters that depend on the electric field or inner potential caused by activated dopant atoms with a sub-nm spatial resolution, are useful for designing current fields, and can already be applied to both n-type and p-type implanted areas.…”
Section: Introductionmentioning
confidence: 99%