Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity

Proctor, S.J.; Linholm, L.W.; Mazer, Jeffrey A.

doi:10.1109/t-ed.1983.21334

Cited by 174 publications

(69 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Cross bridge Kelvin resistor structure, as shown in Fig.1, is widely used for the measurement of contact resistance and the extraction of specific contact F resistivity [ 1]. Measurement provides a Kelvin potential V and a total current 1.…”

Section: Intoducionmentioning

confidence: 99%

An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors

Loh

Swirhun

Crabbé

et al. 1985

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Section: Intoducionmentioning

confidence: 99%

An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors

Loh

Swirhun

Crabbé

et al. 1985

IEEE Electron Device Lett.

View full text Add to dashboard Cite

“…Low values of ρ c for contacts on n + -InGaAs between 0.4 and 3.2 · μm 2 have been reported [4]- [7]. Currently, the contact resistance in lateral devices is mostly extracted using a TLM structure [8] or a four-terminal Kelvin test structure [9]. In a TLM , the contacts are very large, they are separated by a distance in the scale of microns and the metal resistance is neglected.…”

Section: Introductionmentioning

confidence: 99%

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

Vardi

et al. 2014

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Abstract-We propose and demonstrate a novel test structure to characterize the electrical properties of nano-scale metal-semiconductor contacts. The structure is in essence a two-port transmission line model (TLM) with contacts in the nanometer regime. Unlike the conventional TLM, two types of Kelvin measurements are possible. When performed on devices with different contact spacing, this allows the extraction of the contact resistance, the semiconductor sheet resistance, and the metal sheet resistance. For this, a 2-D distributed resistive network model has been developed. We demonstrate this technique in Mo/n + -InGaAs contacts with contact lengths from 19 to 450 nm where we have measured an average contact resistivity of 0.69 ± 0.3 · μm 2 . For relatively long contacts (>110 nm), this corresponds to an extremely small contact resistance of 6.6 ± 1.6 · μm.Index Terms-Nano contacts, TLM, contact resistivity, III-V MOSFET.

show abstract

“…The Pearson's correlation coefficient is 0.9974. The slope of the least squares fit is 1.9 mV = 0.68 , where is the gap voltage of niobium (about 2.85 mV) 2 . When a linear fit is performed on the five smallest junc- tions, ranging in critical current from 32 A to 120 A, the RMS deviation is only 6.1 A.…”

Section: Resultsmentioning

confidence: 99%

“…Thus the wafers can be measured during processing: to determine the electrical properties of the junctions, one simply has to load the wafer into an automated probe station and wait. The resistance of a junction can be measured with a simple cross-bridge kelvin resistor (CBKR) test structure [2] consisting of a Josephson junction with four leads, two on each side of the junction, as shown in Fig. 1.…”

Section: He Critical Currentmentioning

confidence: 99%

“…Thus we eliminate the term in (1), so for convenience we introduce a new operator that differs from only in that it is not dependent on . In the area of the lead not directly over the junction, (1) reduces to (2) In the areas directly over and under the junction, current flows out of one layer into the other, so the two-dimensional divergence of current in each layer is nonzero. Thus we must return to the three-dimensional equation.…”

Section: B Reduction To Two Dimensionsmentioning

confidence: 99%

See 1 more Smart Citation

Room-temperature testing for high critical-current-density Josephson junctions

Ohara

Berggren

2000

IEEE Trans. Appl. Supercond.

View full text Add to dashboard Cite

Abstract-This paper demonstrates that room-temperature resistance measurements can accurately predict the critical current and normal resistance of high critical-current-density junctions. We fabricated high critical-current-density ( 200 A/ m 2 = 20 kA/cm 2 ) Nb/Al/AlO /Nb Josephson junctions in cross-bridge Kelvin resistor (CBKR) test structures and measured their electrical characteristics both at 4.2 K and at room temperature. We developed a two-dimensional mathematical model of the CBKR test structure with two resistive wiring layers in order to characterize the effect of current crowding on the room-temperature measurements. We then used the model to remove the effect of current crowding from the room-temperature measurements and correlated the values of these measurements to the electrical properties of the junctions at 4.2 K. We also identified test-structure-design rules that guarantee current crowding is negligible.

show abstract

Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity

Cited by 174 publications

References 23 publications

An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors

An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

Room-temperature testing for high critical-current-density Josephson junctions

Contact Info

Product

Resources

About