2018
DOI: 10.1038/s41563-017-0002-4
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Direct observation of a two-dimensional hole gas at oxide interfaces

Abstract: The discovery of a two-dimensional electron gas (2DEG) at the LaAlO/SrTiO interface has resulted in the observation of many properties not present in conventional semiconductor heterostructures, and so become a focal point for device applications. Its counterpart, the two-dimensional hole gas (2DHG), is expected to complement the 2DEG. However, although the 2DEG has been widely observed , the 2DHG has proved elusive. Herein we demonstrate a highly mobile 2DHG in epitaxially grown SrTiO/LaAlO/SrTiO heterostruct… Show more

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Cited by 179 publications
(130 citation statements)
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“…In previous experimental tests, however, this interface mostly turned out to be insulating, [ 1,15 ] and a clear explanation was lacking. Although coexistence of 2DEG and 2DHG has been observed in STO/LAO/STO heterostructures, [ 16–19 ] the hole mobility was relatively low (1000 cm 2 V –1 s −1 ) and the characterization of the hole‐related transport was not straightforward due to the coexisting 2DEG. Furthermore, a meticulous growth‐and‐annealing process was inevitably required to produce a sharp interface without oxygen vacancies.…”
Section: Figurementioning
confidence: 99%
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“…In previous experimental tests, however, this interface mostly turned out to be insulating, [ 1,15 ] and a clear explanation was lacking. Although coexistence of 2DEG and 2DHG has been observed in STO/LAO/STO heterostructures, [ 16–19 ] the hole mobility was relatively low (1000 cm 2 V –1 s −1 ) and the characterization of the hole‐related transport was not straightforward due to the coexisting 2DEG. Furthermore, a meticulous growth‐and‐annealing process was inevitably required to produce a sharp interface without oxygen vacancies.…”
Section: Figurementioning
confidence: 99%
“…Furthermore, a meticulous growth‐and‐annealing process was inevitably required to produce a sharp interface without oxygen vacancies. [ 16 ] Thus, a completely isolated and well‐controlled 2DHG at the STO interface, where electric‐field gating can modulate the hole carriers more effectively, is required to access the unexplored hole‐related physics and capabilities of this system.…”
Section: Figurementioning
confidence: 99%
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“…A survey of recent high‐resolution CTR results using model refinement, direct methods, and hybrid approaches shows that the estimated uncertainty in the relative atomic positions (along the surface normal) is generally less than 0.1 Å (10 pm), the uncertainty in the occupancies is on the order or ≈5–10%, and bond/tilt angles can be determined with a precision a few degrees. [ 1,31,93–100 ]…”
Section: Theory and Measurement Of Ctrsmentioning
confidence: 99%
“…13 On the contrary, it is still challenging to obtain the free holes at interfaces or surfaces of oxides, 3,14 although recent experiment shows that strong hole carriers can be seen at the LaAlO 3 /SrTiO 3 heterointerface by reducing the oxygen defects. 15,16 However, 2DHGs have been researched in Ge/Si based semiconductor heterostructures, presenting novel physics, such as spin Hall effect induced edge-spin accumulation and well-controlled Coulomb blockade oscillations. [17][18][19] The lack of investigations of 2DHGs on perovskite oxides might be ascribed to the limitation of current epitaxial growth technology, which generally allows lms to grow along (001) cubic direction through substrate matching, preserving an extra e À /2 per unit cell on the discontinued interface or surface.…”
Section: 2mentioning
confidence: 99%