2020
DOI: 10.1002/adma.201906003
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High‐Mobility 2D Hole Gas at a SrTiO3 Interface

Abstract: Strontium titanate (SrTiO3 or STO) is important for oxide‐based electronics as it serves as a standard substrate for a wide range of high‐temperature superconducting cuprates, colossal magnetoresistive manganites, and multiferroics. Moreover, in its heterostructures with different materials, STO exhibits a broad spectrum of important physics such as superconductivity, magnetism, the quantum Hall effect, giant thermoelectric effect, and colossal ionic conductivity, most of which emerge in a two‐dimensional (2D)… Show more

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Cited by 26 publications
(28 citation statements)
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“…1d and Extended Fig. 1, clearly indicate that a P-type channel is formed with a sheet hole density psheet = 2.56×10 13 cm -2 at 3.7 K. As confirmed in our previous work, in which we found nearly the same hole concentration at the FeOy/STO interface, this result indicates that holes are confined near this interface and that a 2DHG is formed in our FET device 24 . Also, we confirmed the formation of the N-type region under the Al pads using a control sample (sample A) of a 2-nm thick Al layer deposited on STO (see Methods and Extended Fig.…”
supporting
confidence: 88%
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“…1d and Extended Fig. 1, clearly indicate that a P-type channel is formed with a sheet hole density psheet = 2.56×10 13 cm -2 at 3.7 K. As confirmed in our previous work, in which we found nearly the same hole concentration at the FeOy/STO interface, this result indicates that holes are confined near this interface and that a 2DHG is formed in our FET device 24 . Also, we confirmed the formation of the N-type region under the Al pads using a control sample (sample A) of a 2-nm thick Al layer deposited on STO (see Methods and Extended Fig.…”
supporting
confidence: 88%
“…Thus, if the metal atoms become acceptors and supply holes to STO, as found in the case of Fe 34,35 , the STO interface region under the metal layer may exhibit P-type conduction. Indeed, as shown in our previous work 24 , when depositing an Fe layer thinner than 0.25 nm, the Fe atoms supply holes to the STO interface, by which a 2DHG with an extremely high mobility up to 24,000 cm 2 /Vs is formed. These previous results thus suggest that, by depositing appropriate metal layers with a carefully designed thickness onto an STO surface, conducting regions with either electrons or holes can be selectively formed at the STO interface, as illustrated in Fig.…”
supporting
confidence: 61%
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“…Furthermore, recently Anh et al. [ 56 ] investigated the Seebeck coefficients of the 2D hole or electron gas at a SrTiO 3 interface in which the observed values of S , S=150 and −160 µV K −1 for p‐type or n‐type SrTiO 3 , respectively, are similar to those of 3D SrTiO 3 . It is consistent with the fact that the enhancement PF of the low‐dimensional materials comes not from the Seebeck coefficient but from the electrical conductivity.…”
Section: Experimental Evidencesmentioning
confidence: 98%