Direct observation of conduction-band structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>- and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">SiC</mml:mi></mml:math>using ballistic electron emission microscopy

Kaczer, B.; Im, H.-J.; Pelz, J. P.; Chen, J.; Choyke, W. J.

doi:10.1103/physrevb.57.4027

Cited by 45 publications

(36 citation statements)

References 17 publications

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“…In contrast, for 4H-SiC we observe an additional threshold ~0.14 V above the lowest threshold, suggesting an additional CBM at an energy ~0.14 eV above the lowest CBM. These results are in reasonable quantitative agreement recent band structure calculations done by us [6] and other groups [9,10], providing direct experimental verification of these calculations.…”

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confidence: 80%

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Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy

Kaczer²,

Pelz

et al. 1998

MSF

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Abstract:We have performed ballistic-electron emission microscopy (BEEM) of Pd and Pt Schottky contacts on 6H-and 4H-SiC and Pd Schottky contacts on 15R-SiC. Measured Schottky barrier heights (SBH's) appear spatially uniform up to the fitting error due to noise (~0.03 and ~0.1 eV for 6H-and 4H-SiC, respectively). In 4H-SiC, we observed an additional conduction band minimum (CBM) ~0.14 eV above the lowest CBM, which is in good agreement with our band theoretical calculation. Preliminary results on Pd/15R-SiC indicate a higher CBM ~0.5 eV above the lowest CBM, and possibly another higher CBM ~0.3 eV above the lowest CBM. Also, in Pd/15R-SiC, large variations in BEEM spectra at different locations were observed, suggesting an inhomogeneous interface.Additionally, we sometimes observed enhancement in ballistic transmittance over regions intentionally stressed by hot electron injection.We report ballistic-electron emission microscopy (BEEM) measurements of Pd and Pt Schottky contacts on 6H-and 4H-SiC, and Pd contacts on 15R-SiC. The BEEM technique is an extension of scanning tunneling microscopy (STM) and can be used to probe local electronic properties of buried metal/semiconductor interfaces with nanometer-scale spatial resolution and high energy resolution [1,2]. Figure 1 shows the schematic experimental setup with corresponding energy-level diagrams for BEEM. The STM tip is used to inject hot electrons into a thin metal film, with the hot-electron peak energy controlled by the applied tip bias V T . Provided the metal film is thin enough compared with the electron mean free path, a small fraction of these electrons can cross the metal film elastically and can enter the semiconductor conduction band if injected with sufficient energy. Hence, the local Schottky barrier height (SBH) [3] qV B can be directly determined by measuring BEEM I c -V T curves (also called BEEM spectra) and evaluating the threshold voltage V th for

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confidence: 80%

“…Each spectrum shows distinct thresholds, the lowest of which represents the Schottky barrier height. Solid curves are fits to the BK model, and the arrows indicate the extracted threshold values [6]. Obtained SBH's for Pd/ and Pt/6H-SiC are in general agreement with reported values using conventional techniques [7,8] to be lower than our values.…”

supporting

confidence: 79%

Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy

Kaczer²,

Pelz

et al. 1998

MSF

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“…2͑a͒ shows that a single threshold is quite sufficient for 3C-SiC. On n-type Schottky contacts it is well documented that a second BEEM threshold may indicate the existence of a second CBM at higher energy than the lowest CBM, [13][14][15][16][17] and by analogy a second BHEM threshold on p-type Schottky contacts suggests the presence of a second VBM at slightly lower energy than the highest VBM. We will return to this point later.…”

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confidence: 98%

“…If the interface-state electric dipole is the same ͑for a given metal͒ on all polytypes, then the measured n-type SBH should indeed track the conduction band energy. These studies [13][14][15]17 also showed that BEEM could detect the presence and energy splitting of higher conduction bands in 4H-and 15R-SiC. This past work indicates that it should be possible to use SBH measurements on p-type SiC to measure the valence band offsets between SiC polytypes, and also to investigate the possible existence of a crystal-field split valence band in hexagonal SiC polytypes.…”

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confidence: 99%

“…12 This should produce a small ͑Ͻ200 meV͒ crystal-field splitting in the valance band of the hexagonal polytypes that is absent in 3C-SiC. 3,6,7 It has been found [13][14][15] that differences in the n-type Schottky barrier heights ͑SBHs͒ measured using ballistic electron emission microscopy 16 ͑BEEM͒ on n-type 4H-, 6H-, and 15R-SiC closely track the corresponding difference in band gap. This suggests that measured differences in SBH can be used to track the corresponding bulk conduction band offsets.…”

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Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy

Park

Ding

Pelz

et al. 2006

Applied Physics Letters

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p -type Schottky barriers in Pt∕3C-SiC contacts have been measured using ballistic hole emission microscopy (BHEM) and estimated to be ∼0.06eV higher than identically prepared Pt∕p-type 4H-SiC contacts. This indicates the 3C-SiC valence band maximum (VBM) is ∼0.06eV below the 4H-SiC VBM, consistent with the calculated ∼0.05eV type-II valence band offset between these polytypes. We also observe no evidence of an additional VBM in 3C-SiC, which supports the proposal that the second VBM observed in BHEM spectra on 4H-SiC is a crystal-field split VBM located ∼110meV below the highest VBM.

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Fundamental Aspects of Si C

Choyke

Devaty

2013

Materials Science and Technology

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The sections in this article are Introduction Polytypism Crystallography Inequivalent Sites Some Properties of Simple Polytypes Origin of Polytypism Band Structure The General Picture The Conduction Band Edges The Valence Band Edges Phonons Calculations of Phonon Dispersion Relations Infrared Transmission and Reflection Phonon Frequencies Measured by Low Temperature Photoluminescence ( LTPL ) and the k ‐Space Locations of Conduction Band Minima First and Second Order R aman Scattering R aman Scattering from Free Carriers Intrinsic Excitons Shallow Centers Shallow Donors: Nitrogen and Phosphorus Nitrogen Phosphorus Acceptors Deep Centers Transition Metals Titanium Vanadium Chromium Molybdenum Scandium Manganese Rare Earths: Erbium Intrinsic Defects Deep Level Transient Spectroscopy ( DLTS ) Electron Spin Resonance and Positron Annihilation Low Temperature Photoluminescence Transport Properties Carrier Effective Masses Mobilities and Mobility Anisotropy Hall Scattering Factor Time Resolved Measurements and Lifetimes Acknowledgements

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Direct observation of conduction-band structure of4H- and6H−SiCusing ballistic electron emission microscopy

Cited by 45 publications

References 17 publications

Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy

Nanometer-Scale Investigation of Schottky Contacts and Conduction Band Structure on 4H-, 6H- and 15R-SiC Using Ballistic Electron Emission Microscopy

Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy

Fundamental Aspects of Si C

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