Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography

Ohno, Toshiyuki; Yamaguchi, Hiroshi; Kuroda, Shunsuke; Kojima, Kazutoshi; Suzuki, Takaya; Arai, Kazuo

doi:10.1016/j.jcrysgro.2003.08.065

Cited by 190 publications

(168 citation statements)

References 13 publications

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“…Many researchers have investigated the defects in SiC wafers, epitaxial layers, and SiC devices by this method. [10][11][12] In the reflection X-ray topography with grazing incident geometry, selection of wave length and g vector makes it possible to change the penetration depth. 11 By comparing the X-ray topography images with the different penetration depth, the defect evolution during the solution growth of SiC can be observed.…”

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confidence: 99%

“…[10][11][12] In the reflection X-ray topography with grazing incident geometry, selection of wave length and g vector makes it possible to change the penetration depth. 11 By comparing the X-ray topography images with the different penetration depth, the defect evolution during the solution growth of SiC can be observed. In the present study, we investigated the evolution of threading screw dislocation conversion during the solution growth of 4H-SiC on a vicinal seed crystal by grazing incident reflection synchrotron X-ray topography with the different penetration depth.…”

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confidence: 99%

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Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

Harada¹,

Yamamoto²,

Seki³

et al. 2013

Apl Materials

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Evolution of threading screw dislocation (TSD) conversion during the solution growth of 4H-SiC on a vicinal crystal of 4H-SiC(0001) was investigated by synchrotron X-ray topography. Selecting appropriate X-ray wavelength and g vector, we can change the penetration of X-ray, and the dislocation behaviors with the different depth were successfully observed. Evidently TSDs parallel to the c-axis having c-component Burgers vector were changed into defects on the (0001) basal planes with the same Burgers vector as the TSDs, propagating to the [112¯0] step-flow direction by advancing macrosteps during the solution growth. The TSD conversions stochastically took place during the growth. The conversion rate was almost uniform and finally almost all TSDs were converted to the basal plane defects. The conversion rate was low at the very early stage of the growth, which implies that the macrosteps were not formed at the initial stage of the solution growth

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Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

Harada¹,

Yamamoto²,

Seki³

et al. 2013

Apl Materials

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“…Large Area White Beam Synchrotron Back Reflection X-Ray Topography was used to analyse selected ~1cm 2 regions at various locations on up to 10 different bulk SiC wafers. The study concentrated particularly on the density and distribution of threading screw dislocations (TSDs).…”

Section: Introductionmentioning

confidence: 99%

“…Benefits include the possibility of creating semiconductor devices which can operate at extremely high temperatures, its wide band gap and its large electrical breakdown field [1] together with its radiation hard abilities allow its use in harsh environments. SiC however is quite prone to defects [2,4]. The production of extremely high intensity low divergence x-ray beams at synchrotron sources provides for an ideal for examination technique via x-ray topography [2,3,5].…”

Section: Introductionmentioning

confidence: 99%

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An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers

Brazil

McNally

Ren

et al. 2007

MSF

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We present herein a first comparative analysis of the quality of 50 mm and 75 mm diameter SiC wafers, purchased directly from vendors across the world, types including the most widely available configurations. Large Area White Beam Synchrotron Back Reflection X-Ray Topography was used to analyse selected ~1cm2 regions at various locations on up to 10 different bulk SiC wafers. The study concentrated particularly on the density and distribution of threading screw dislocations (TSDs). We also examined all wafers for basal plane dislocation (BPDs) densities and distributions. Alarmingly large variation in wafer quality was observed. TSD densities vary from a minimum of 0 cm-2 (in a-plane material) to values as large as over 2,000 cm-2 on some n-type 4H-SiC wafers. TSD densities on individual wafers can also vary by similar magnitudes, e.g. 500cm-2 to 2,500 cm-2 on two regions only 2 cm apart on a 50 mm diameter wafer. Computer-based image process analysis was used to present a statistical analysis of the distributions of defects. For example algorithms created in MATLAB®, Image Processing Toolbox, isolated possible TSD locations allowing rapid counting to be performed. These counts were confirmed by manual counting of selected unmodified images.

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Characterization Techniques and Defects in Silicon Carbide

Kimoto¹,

Cooper

2014

Fundamentals of Silicon Carbide Technology

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Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography

Cited by 190 publications

References 13 publications

Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers

Characterization Techniques and Defects in Silicon Carbide

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