Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Abstract

AbstracL The ternary B8-type (NiAs-type) phases in the systems &-Fe-= and Cr-Fe-'E have teen investigated using M h b a u e r spectroscopy in the temperature range 4.2-3a) K. Paramagnetic doublels have been observed with linewidths which increase with decreasing temperature. The hyperline interaction parameters and Debye-Waller factors have been determined. The obvious occurrence of magnetic ordering effects as evidenced by the magnetic susceptibility was found to be reflected as broadening of the M k b a u e r resonance lines. "be experimentally deduced effective m a s implies that the strength of the covalent bonding of the resonant atom to the lattice decreases from Cc-Fe-% to Cr-Fe-%. This clearly m d a l e s with the increasing ionicily of the chemical bonds as indicated by the systematic changes in the axial ratio c f a and the magnetic moment.

Fluctuations in Electronic Properties of MOS Interface in Nanoscale MOSFETs

“…4, we observed a novel transient phenomenon in the rising portion of the CP characteristics, which depend on the pulse width (t W ), i.e., the on-time of the gate pulse [22][23]. In the rising portion, the CP current (I CP ) at a given base level (V BASE ) of the gate pulse increases with increasing on-time.…”

Charge pumping current from single Si/SiO2interface traps: Direct observation ofPbcenters and fundamental trap-counting by the charge pumping method

“…6(a). The dependences of the CP characteristics on the gate pulse width (or the on time t Top and off time t Base ) are useful for observing the carrier capture/emission processes in individual traps [8]. These properties are quite effective in revealing the contribution from each trap, as shown in Figs.…”

“…The charge pumping (CP) technique 2,3) is known to be the only highly-precise method for evaluating the density of interface traps even in extremely small-area MOSFETs, and many studies on the in-depth exploration of traps near the MOS interface have been reported using the CP method. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] This method will become a more powerful technique for investigating the interface traps in the future. In the CP method, a pulsed voltage is applied to the gate to alternately form inversion and accumulation layers under a constant reverse-biased source/drain-junction.…”

Accurate measurements of the charge pumping current due to individual MOS interface traps and interactions in the carrier capture/emission processes

“…Interface Traps It has been reported that the dependency of the CP characteristics on the gate pulse width (t W ) (or the on/off time) provides us with an effective method for observing the carrier capture/emission processes in individual interface traps [10]. The on time is defined by t W -t r /0.8, and the off time is defined by T P -(t W + t f /0.8) as shown in Fig.…”