AbstracL The ternary B8-type (NiAs-type) phases in the systems &-Fe-= and Cr-Fe-'E have teen investigated using M h b a u e r spectroscopy in the temperature range 4.2-3a) K. Paramagnetic doublels have been observed with linewidths which increase with decreasing temperature. The hyperline interaction parameters and Debye-Waller factors have been determined. The obvious occurrence of magnetic ordering effects as evidenced by the magnetic susceptibility was found to be reflected as broadening of the M k b a u e r resonance lines. "be experimentally deduced effective m a s implies that the strength of the covalent bonding of the resonant atom to the lattice decreases from Cc-Fe-% to Cr-Fe-%. This clearly m d a l e s with the increasing ionicily of the chemical bonds as indicated by the systematic changes in the axial ratio c f a and the magnetic moment.

Fluctuations in the number, energy level, and carrier capture rate of Si/SiO 2 interface traps in small-gate-area metal-oxidesemiconductor field-effect transistors (MOSFETs) containing only a few interface traps have been directly observed. This observation is based on an understanding of charge pumping phenomena and a newly observed phenomenon of on(off)-time-dependent charge pumping characteristics in their rising (falling) portion. It is directly shown from experimental results that the fluctuation in the number of interface traps contained in an individual nanoscale MOSFET is fairly large, and that there are various interface traps with individual discrete energy levels and carrier capture rates. These fluctuations may have an impact on the variation in device performance of future digital metal-insulator-semiconductor (MIS) devices.

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