Direct Observation of Quasi-Bound States and Band-Structure Effects in a Double Barrier Resonant Tunneling Structure Using Ballistic Electron Emission Microscopy

Sajoto, T.; O'Shea, J.; Bhargava, S.; Leonard, D.; Chin, M. A.; Narayanamurti, V.

doi:10.1103/physrevlett.74.3427

Cited by 67 publications

(34 citation statements)

References 16 publications

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“…These thresholds were observed at both 300 and 77 K. 1,2 We report the BEES measurements on InAs/AlSb resonant tunneling structures, which are of significant interest for the fabrication of high-speed circuits. 3,4 We have examined two structures that differ in quantum well thickness, i.e., different resonant state energies.…”

confidence: 99%

Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy

Walachová

Zelinka

Vaniš

et al. 1997

Applied Physics Letters

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Template-based synthesis and magnetic properties of Mn-Zn ferrite nanotube and nanowire arrays J. Appl. Phys. 111, 026104 (2012) Self-assembled broadband plasmonic nanoparticle arrays for sensing applications Appl. Phys. Lett. 100, 031102 (2012) MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED AIP Advances 2, 012108 (2012) Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes Appl. Phys. Lett. 100, 022102 (2012) Experimental realization of the porous silicon optical multilayers based on the 1-s sequence

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confidence: 99%

Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy

Walachová

Zelinka

Vaniš

et al. 1997

Applied Physics Letters

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“…Microscopic BEEM measurements as well as macroscopic diode I-V measurements show no evidence of significant metal/semiconductor ͑M/S͒ interface state variation across the inclusions. BEEM has previously been shown to be a powerful tool to investigate planar resonant tunneling structures located close to the M/S interface, 12 and our ''cross-sectional BEEM'' further extends its capability to probe propagating states in individual QW's.…”

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confidence: 99%

Quantum well state of self-forming3C−SiCinclusions in4HSiC determined by ballistic electron emission microscopy

et al. 2004

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High-temperature-processing-induced double-stacking-fault 3C-SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53Ϯ0.06 eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I-V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions. Quantum well ͑QW͒ structures in semiconductor materials have played an important role in the fabrication of semiconductor lasers and other devices. Most QW structures are fabricated by changing the chemical composition of epitaxial layers during growth. However, the polytypism of SiC has made possible a unique type of ''structure-only'' QW ͑with no change in composition, density, or nearest-neighbor stacking across the QW boundaries͒ involving thin layers of cubic 3C SiC ͑which has the smallest band gap among SiC polytypes͒ embedded in a higher band gap SiC host. 1 Recently, evidence of self-forming 3C inclusions in hexagonal SiC due to stacking fault formation along the ͑1000͒ hexagonal basal plane 2 has been observed in 4H-and 6H-SiC p-n diodes after high current operation, 3,4 and also in 4H-SiC materials with heavily n-type epilayers 5 or substrates 6,7 after high temperature processing. Observations of reduced-energy luminescence from these transformed materials and theoretical calculations of the band structure led to the proposal that the 3C inclusions in 4H and 6H SiC behave as electron QW's. 5,6,8 -10 In this Rapid Communication, we report high-resolution electronic characterization of individual 3C inclusions ͑of the ''double stacking fault'' type 5-7 ͒ that intersect a metalcoated 4H-SiC wafer surface using ballistic electron emission microscopy ͑BEEM͒. 11 The results directly verify the QW nature of the inclusions. We find that the QW states are propagating two-dimensional ͑2D͒ states with a 2D conduction band minimum ͑CBM͒ energy 0.53Ϯ0.06 eV lower than the 4H-SiC bulk CBM. Microscopic BEEM measurements as well as macroscopic diode I-V measurements show no evidence of significant metal/semiconductor ͑M/S͒ interface state variation across the inclusions. BEEM has previously been shown to be a powerful tool to investigate planar resonant tunneling structures located close to the M/S interface, 12 and our ''cross-sectional BEEM'' further extends its capability to probe propagating states in individual QW's.The original 4H-SiC samples of this study were 35 mm diameter wafers purchased from Cree, Inc. and were processed and first studied using electrical, optical, and structural methods at Arizona State University. 6,13 They had a 2 m lightly n-type N-doped ͓(1 -1.5)ϫ10 17 cm Ϫ3 ͔ epilayer on a heavily n-type N-doped (ϳ3ϫ10 19 cm Ϫ3 ) Si-face substrate with an 8°surface miscut from the basal plane. After being thermally oxidized at 1150°C for 90 min in dry oxygen,...

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“…Ballistic Electron Emission Spectroscopy (BEES) has been shown to be a useful probe of electron transport through buried metal-semiconductor interfaces [1,2], semiconductor heterojunctions [3], and quantum dot structures [4]. Its optical counterpart, Ballistic Electron Emission Luminescence (BEEL), has enabled the study of luminescence from buried structures [5,6], but thus far the spectroscopic study of luminescence from a single buried structure such as a quantum dot has remained elusive.…”

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confidence: 99%

Direct injection tunnel spectroscopy of a p-n junction

Likovich

Russell

Narayanamurti

et al. 2009

Applied Physics Letters

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We demonstrate spectroscopic measurements on an InGaAs p-n junction using direct tunnel injection of electrons. In contrast to the metal-base transistor design of conventional ballistic electron emission spectroscopy (BEES), the base layer of our device is comprised of a thin, heavily doped p-type region. By tunneling directly into the semiconductor, we observe a significant increase in collector current compared to conventional BEES measurements. This could enable the study of systems and processes that have thus far been difficult to probe with the low-electron collection efficiency of conventional BEES, such as luminescence from single-buried quantum dots.

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Direct Observation of Quasi-Bound States and Band-Structure Effects in a Double Barrier Resonant Tunneling Structure Using Ballistic Electron Emission Microscopy

Cited by 67 publications

References 16 publications

Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy

Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy

Quantum well state of self-forming3C−SiCinclusions in4HSiC determined by ballistic electron emission microscopy

Direct injection tunnel spectroscopy of a p-n junction

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