II-VI compound semiconductors are one of the most important optoelectronic materials. Wide-gap II-VI compounds, especially, ZnS, ZnSe, ZnO and ZnTe, are promising materials in fabricating laser diodes (LDs) and light-emitting diodes (LEDs) operating in the visible and ultraviolet spectral ranges. The recent challenge for their application is the development of sizable high-purity and high-quality bulk crystals as substrates for fabricating devices. Progress has been made in the past several decades in the areas of bulk crystal growth with regard to stoichiometric control, uniformity, reproducibility, thermal stability, diameter control, and impurity and dopant control. Sizable ZnO, ZnSe and ZnTe single crystals have conventionally been grown by seeded physical vapor transport (SPVT), the hydrothermal method, Bridgman methods, and so on. These advances have attracted much attention for the development of future optoelectronics.