Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films

Koester, T.

doi:10.1116/1.590412

Cited by 8 publications

(4 citation statements)

References 9 publications

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“…However, some oscillation peaks remain up to about 60 K for both devices. Since the CB effect becomes prominent if the charging energy exceeds the thermal energy , there is a relation between and , , where is the Boltzmann constant and is the maximum temperature for the CB operation [30]. From this relationship, the charging energy is calculated to be 5.2 meV.…”

Section: Device Characteristicsmentioning

confidence: 99%

Ambipolar coulomb blockade characteristics in a two-dimensional Si multidot device

Nuryadi

Ikeda

Ishikawa

et al. 2003

IEEE Trans. Nanotechnology

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A two-dimensional Si multidot channel field-effect transistor is fabricated from a silicon-on-insulator material and the electrical characteristics are studied. The multidots are formed using a nanometer-scale local oxidation of Si process developed in our laboratory. The device shows ambipolar characteristics because of Schottky source and drain, i.e., the carriers are electrons for positive gate voltage and holes for the negative one. It is shown that Coulomb blockade (CB) oscillations are clearly observed for both of the electrons and holes at measurement temperatures up to 60 K. Both CB characteristics show nonperiodic oscillation and an open Coulomb diamond. These features are ascribed to the single electron/hole tunneling in the Si multidot channel.

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Section: Device Characteristicsmentioning

confidence: 99%

Ambipolar coulomb blockade characteristics in a two-dimensional Si multidot device

Nuryadi

Ikeda

Ishikawa

et al. 2003

IEEE Trans. Nanotechnology

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“…One approach to avoid such a complex feature might be the use of doped Si wires on SOI wafers. Many groups have reported SETs based on doped Si wires [39][40][41][42][43]. Some of them utilized multiple-island structures originating from the random fluctuation in a Si wire, which might be related to the doping level or in the wire width [39,40].…”

Section: Island Formation By Lithographymentioning

confidence: 99%

“…Many groups have reported SETs based on doped Si wires [39][40][41][42][43]. Some of them utilized multiple-island structures originating from the random fluctuation in a Si wire, which might be related to the doping level or in the wire width [39,40]. Another reported rather periodical CB oscillations similar to those of SETs with a single metal island [41][42][43].…”

Section: Island Formation By Lithographymentioning

confidence: 99%

Silicon single-electron devices

Takahashi

Ono

Fujiwara

et al. 2002

J. Phys.: Condens. Matter

131

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Single-electron devices (SEDs) are attracting a lot of attention because of their capability of manipulating just one electron. For their operation, they utilize the Coulomb blockade (CB), which occurs in tiny structures made from conductive material due to the electrostatic interactions of confined electrons. Metals or III–V compound semiconductors have so far been used to investigate the CB and related phenomena from the physical point of view. However, silicon is preferable from the viewpoint of applications to integrated circuits because, on a silicon substrate, SEDs can be used in combination with conventional complementary metal-oxide-semiconductor (CMOS) circuits. In addition, the well established fabrication technologies for CMOS large-scale integrated circuits (LSIs) can be applied to making such small structures. LSI applications of the silicon SEDs can be categorized into two fields: memory and logic. Many kinds of device structure and fabrication process have been proposed and tested for these purposes. This paper introduces the current status of silicon-based SED studies for LSI applications.

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“…Silicon [or silicon-on insulator (SOI)] is, in principle, an attractive material for QD experiments due to its highly developed fabrication technology and the potential integration of QD devices with conventional electronics circuits. , Previous approaches toward building QD systems on SOI substrates have mainly focused on obtaining ultrathin NWs from lithography followed by etching procedures to reduce the NW width. − Single-electron effects have been observed in these devices, but the results disagree with the designed device geometry; the etching processes introduce defects and roughness that, in turn, lead to the random formation of QDs within the nanostructure and irreproducible transport characteristics. For example, Coulomb blockade diamond diagrams, a signature of single-electron charging, are typically not obtainable because the change of signal in consecutive scans can be much larger than the gate influence .…”

Section: Introduction and Experimental Backgroundmentioning

confidence: 99%

The Emergence of a Coupled Quantum Dot Array in a Doped Silicon Nanowire Gated by Ultrahigh Density Top Gate Electrodes

Green

Heath

et al. 2007

J. Phys. Chem. C

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The electrical characteristics of Si nanowire gated by an array of very closely spaced nanowire gate electrodes are experimentally determined and theoretically modeled. Qualitative and quantitative changes in the transport characteristics of these devices, as a function of gate-array voltage, are described. Experiments are reported for two widths of Si nanowires, 40 and 17 nm, and for a varying number of gate electrodes, all spaced at a pitch of 33 nm. We find that these top nanowire gate electrodes can be utilized to locally deplete the carriers in the underlying Si nanowire and thus define an array of coupled quantum dots along the nanowire. Reproducible Coulomb blockade is observed, and clear diamond features are obtained when the conductance is plotted in the plane of the source-drain and gate voltages. The regularity of the diamond diagrams is imposed by the regularity of the SNAP top gate electrodes. Model computations of the electronic structure starting from a tight-biding Hamiltonian in the atomic basis suggest that the control made possible by the top gate voltage induces the emergence (and reversible submergence) of a coupled quantum dot structure in an otherwise homogenously doped Si nanowire.

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Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films

Abstract: Articles you may be interested inSingle-electron transistor structures based on silicon-on-insulator silicon nanowire fabrication by scanning probe lithography and wet etching

Cited by 8 publications

References 9 publications

Ambipolar coulomb blockade characteristics in a two-dimensional Si multidot device

Ambipolar coulomb blockade characteristics in a two-dimensional Si multidot device

Silicon single-electron devices

The Emergence of a Coupled Quantum Dot Array in a Doped Silicon Nanowire Gated by Ultrahigh Density Top Gate Electrodes

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