Direct synthesis of 2H–SiC nanowhiskers

Yao, Yingbang; Lee, S.T.; Li, F.H.

doi:10.1016/j.cplett.2003.09.149

Cited by 62 publications

(50 citation statements)

References 22 publications

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“…One possible mechanism of typical nanowire formation without cap may be a process similar to the oxide-assisted growth. 27) Although the detailed growth mechanism of β-SiC/SiO2 coaxial nanowires is not com-…”

Section: Formation Mechanism Of Nanowirementioning

confidence: 99%

Influence of raw powder size, reaction temperature, and soaking time on synthesis of SiC/SiO2 coaxial nanowires via thermal evaporation

Khongwong

Imai

Yoshida

et al. 2009

J. Ceram. Soc. Japan

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High-yield SiC/SiO2 core-shell nanowires were synthesized without adding metal catalysts from outside through a simple thermal evaporation of silicon powders during decomposition of methane gas. The influence of three parameters, size of Si raw powder (50 nm and 5 μ m), reaction temperature (1573, 1623 and 1673 K), and soaking time (1, 3 and 6 h), was investigated.The typical synthesized nanowires from different conditions possess the diameter of no thicker than 100 nm with several tens micrometers in length. It was addressed that the condition using the smaller size Si powder, which contained the highest amount of oxygen, at higher temperature lead to more complete reaction to obtain a large quantity of nanowires. The synthesized nanowires at higher reaction temperature and longer soaking time possessed larger core than those nanowires prepared at lower reaction temperature and shorter soaking time. Oxidation of larger size Si powder improved yield of nanowires. Based on these results, it was suggested that the typical nanowires should be grown via the oxide-assisted growth mechanism.

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Section: Formation Mechanism Of Nanowirementioning

confidence: 99%

Influence of raw powder size, reaction temperature, and soaking time on synthesis of SiC/SiO2 coaxial nanowires via thermal evaporation

Khongwong

Imai

Yoshida

et al. 2009

J. Ceram. Soc. Japan

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“…These 2D nanostructures, especially nanoporous materials have been studied for their applications in biosensors, nanophotonic and nanoelectronic applications. 1D nanostructures are known to exhibit quantum confinement effect like 0D nanostructures but for 1D nanostructures, the charge carriers can only travel in one direction along the wire, thus, making them useful as interconnects and critical devices in nanoelectronic and nanooptoelectronic applications [10]- [12].…”

Section: Introductionmentioning

confidence: 99%

Silicon carbide- from synthesis to application: a review

2017

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Abstract. This paper provides a review of the synthesis techniques that are used to produce nanostructured silicon carbide. The synthesis methods, consisting of carbothermal reduction, chemical vapor deposition, laser ablation, sol-gel and microwave heating are described. The silicon carbide properties and application are also explained. The paper then discusses the limitations of previous studies which involved complicated equipment and processes, that limit their further application and act as a barrier to further research and development in many fields.

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“…Raman spectroscopy is an efficient method to determine chemical bonds of inorganic materials. Two modes, the longitudinal optical (LO) and transverse optical (TO), can be evaluated to distinguish SiC variants [8,9,13,16]. However, structure defects such as stacking faults (SFs) and micro-twins, which are often involved during the growth of SiC NWs, always result in Raman peak shifting and broadening [4,8,13].…”

Section: Introductionmentioning

confidence: 99%

“…Two modes, the longitudinal optical (LO) and transverse optical (TO), can be evaluated to distinguish SiC variants [8,9,13,16]. However, structure defects such as stacking faults (SFs) and micro-twins, which are often involved during the growth of SiC NWs, always result in Raman peak shifting and broadening [4,8,13]. In addition, the random stacking sequences of atomic planes could create a local mixture of polytypes, further leading to the observation of additional peaks in the Raman spectrum [12].…”

Section: Introductionmentioning

confidence: 99%

“…In particular, SiC nanowires (NWs) are expected to benefit unique application possibilities for nano-optical/electronic devices in harsh environments [1,[4][5][6][7][8][9][10][11][12]. Various synthesis routes have been explored and the growth of NWs governed by the catalyst-assisted vapor-liquid-solid (VLS) mechanism is predominant [1,2,6,[11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

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