‘Huangjinya’ is an excellent albino tea germplasm cultivated in China because of its bright color and high amino acid content. It is light sensitive, with yellow leaves under intense light while green leaves under weak light. As well, the flavonoid and carotenoid levels increased after moderate shading treatment. However, the mechanism underlying this interesting phenomenon remains unclear. In this study, the transcriptome of ‘Huangjinya’ plants exposed to sunlight and shade were analyzed by high-throughput sequencing followed by de novo assembly. Shading ‘Huangjinya’ made its leaf color turn green. De novo assembly showed that the transcriptome of ‘Huangjinya’ leaves comprises of 127,253 unigenes, with an average length of 914 nt. Among the 81,128 functionally annotated unigenes, 207 differentially expressed genes were identified, including 110 up-regulated and 97 down-regulated genes under moderate shading compared to full light. Gene ontology (GO) indicated that the differentially expressed genes are mainly involved in protein and ion binding and oxidoreductase activity. Antioxidation-related pathways, including flavonoid and carotenoid biosynthesis, were highly enriched in these functions. Shading inhibited the expression of flavonoid biosynthesis-associated genes and induced carotenoid biosynthesis-related genes. This would suggest that decreased flavonoid biosynthetic gene expression coincides with increased flavonoids (e.g., catechin) content upon moderate shading, while carotenoid levels and biosynthetic gene expression are positively correlated in ‘Huangjinya.’ In conclusion, the leaf color changes in ‘Huangjinya’ are largely determined by the combined effects of flavonoid and carotenoid biosynthesis.
Articles you may be interested inDielectric properties of (110) oriented Pb Zr O 3 and La-modified Pb Zr O 3 thin films grown by sol-gel process on Pt ( 111 ) ∕ Ti ∕ Si O 2 ∕ Si substrate J. Appl. Phys. 100, 044102 (2006); 10.1063/1.2234819 Competition between ferroelectric and semiconductor properties in Pb ( Zr 0.65 Ti 0.35 ) O 3 thin films deposited by sol-gel J. Appl. Phys. 93, 4776 (2003); 10.1063/1.1562009Dielectric and ferroelectric properties of highly oriented ( Pb,Nb )( Zr,Sn,Ti ) O 3 thin films grown by a sol-gel process Appl.Antiferroelectric PbZrO 3 ͑PZ͒ films have been fabricated on LaNiO 3 /Pt/Ti/SiO 2 /Si substrates using a sol-gel process. The films with perovskite structure showed highly ͗001͘ preferred orientation. An antiferroelectric phase was identified by the presence of 1/4͕110͖ superlattice spots in a ͓001͔ selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 C/cm 2 . Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO 3 on Pt/Ti/SiO 2 /Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.