Articles you may be interested inDielectric properties of (110) oriented Pb Zr O 3 and La-modified Pb Zr O 3 thin films grown by sol-gel process on Pt ( 111 ) ∕ Ti ∕ Si O 2 ∕ Si substrate J. Appl. Phys. 100, 044102 (2006); 10.1063/1.2234819 Competition between ferroelectric and semiconductor properties in Pb ( Zr 0.65 Ti 0.35 ) O 3 thin films deposited by sol-gel J. Appl. Phys. 93, 4776 (2003); 10.1063/1.1562009Dielectric and ferroelectric properties of highly oriented ( Pb,Nb )( Zr,Sn,Ti ) O 3 thin films grown by a sol-gel process Appl.Antiferroelectric PbZrO 3 ͑PZ͒ films have been fabricated on LaNiO 3 /Pt/Ti/SiO 2 /Si substrates using a sol-gel process. The films with perovskite structure showed highly ͗001͘ preferred orientation. An antiferroelectric phase was identified by the presence of 1/4͕110͖ superlattice spots in a ͓001͔ selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 C/cm 2 . Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO 3 on Pt/Ti/SiO 2 /Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.

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Searching for bifunctional oxygen electrocatalysts with good catalytic performance to promote the oxygen evolution/reduction reactions (OER/ORR) is of great significance to the development of sustainable and renewable clean energy. Herein,...