Direct transfer of graphene and application in low-voltage hybrid transistors

Zhu, Huihui; Liu, Ao; Yang, Wenrong; Barrow, Colin J.; Liu, Jingquan

doi:10.1039/c6ra26452b

Cited by 19 publications

(9 citation statements)

References 57 publications

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“…However, as the annealing temperature increases to 610 °C, the increased leakage current of 3.3 × 10 −7 A cm −2 has been observed, which can be caused by the formation of the crystallization-induced grain boundaries. 46 Consequently, the 510−560 °C-annealed ZrGdO x dielectrics have an excellent leakage current property and may benefit the building of highperformance TFTs. Additionally, it also can be noted that the poor leakage current densities of the 560 °C-annealed 2ME-ZrGdO x and WI-ZrO 2 dielectrics are 2.1 × 10 −8 and 7.4 × 10 −9 A cm −2 .…”

Section: Resultsmentioning

confidence: 99%

“…The leakage current density of samples annealed at 510 and 560 °C has been reduced to 1.8 × 10 –8 and 6 × 10 –10 A cm –2 , respectively, which may arise from the complete decomposition of hydroxyl groups. However, as the annealing temperature increases to 610 °C, the increased leakage current of 3.3 × 10 –7 A cm –2 has been observed, which can be caused by the formation of the crystallization-induced grain boundaries . Consequently, the 510–560 °C-annealed ZrGdO x dielectrics have an excellent leakage current property and may benefit the building of high-performance TFTs.…”

Section: Resultsmentioning

confidence: 99%

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Low-Voltage-Operating Transistors and Logic Circuits Based on a Water-Driven ZrGdO_x Dielectric with Low-Cost ZnSnO

Yang

Zhu

et al. 2019

ACS Appl. Electron. Mater.

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In current work, the nontoxic, ecofriendly, water-induced (WI) gadolinium doped zirconium oxide (ZrGdO x ) gate dielectrics have been integrated with low-cost spin-coating-driven ZnSnO films for thin film transistors (TFTs) and logic circuits with superior performance for the first time. High transmittance over 90% and the formation of the metastable cubic phase of Zr2O have qualified its potential application in transparent electronics. ZnSnO films annealed at 430 °C integrated with ZrGdO x films demonstrate remarkable electrical properties and low-voltage operation (2 V), including a high current on/off ratio of ∼1.1 × 106, large saturation carrier mobility of ∼3.1 cm2 V–1 S–1, extreme low leakage current density of 6 × 10–10 A cm–2, and a slight shift in threshold voltage of 0.26 V for bias stability, respectively. To verify the practicability in logic circuits, the resistor-loaded inverters are built by using ZrGdO x /ZnSnO TFTs. This work first put forward and verified that WI gate dielectrics can be favorable to a heterogeneous clean interface with a solution-derived ZnSnO channel layer, taking an important step toward a low-operating voltage and ecofriendly flexible integrated circuit.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Low-Voltage-Operating Transistors and Logic Circuits Based on a Water-Driven ZrGdO_x Dielectric with Low-Cost ZnSnO

Yang

Zhu

et al. 2019

ACS Appl. Electron. Mater.

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“…[31] In addition, another commonly used transfer medium, thermal release tape (TRT), consists of a unique adhesive which has a relatively strong adhesive force at room temperature. [36] After the delamination of graphene from the growth substrates with the assistance of TRT, at an increased temperature (90-160 °C), the adhesive force of TRT will disappear, which would enable the release of graphene onto target substrates. In 2010, Hong et al successfully transferred a 30 in.…”

Section: Adhesion Of Transfer Mediummentioning

confidence: 99%

Graphene Transfer: Paving the Road for Applications of Chemical Vapor Deposition Graphene

Song

Zou

et al. 2021

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Owing to the fascinating properties of graphene, fulfilling the promising characteristics of graphene in applications has ignited enormous scientific and industrial interest. Chemical vapor deposition (CVD) growth of graphene on metal substrates provides tantalizing opportunities for the large‐area synthesis of graphene in a controllable manner. However, the tedious transfer of graphene from metal substrates onto desired substrates remains inevitable, and cracks of graphene membrane, transfer‐induced doping, wrinkles as well as surface contamination can be incurred during the transfer, which highly degrade the performance of graphene. Furthermore, new issues can arise when moving to large‐scale transfer at an industrial scale, thus cost‐efficient and environment‐friendly transfer techniques also become imperative. The aim of this review is to provide a comprehensive understanding of transfer‐related issues and the corresponding experimental solutions and to provide an outlook for future transfer techniques of CVD graphene films on an industrial scale.

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“…[13] On the other hand, dielectric materials are of crucial importance in FETs because improved capacitance could be achieved by using gate dielectric layer for sufficient resistance (reduced gate leakage). [14,15] High-k dielectrics such as Al 2 O 3 , [16,17] HfO 2 , [18,19] and ZrO 2 [20,21] have been extensively used for the graphene-based FETs with nanometer regime, and emerged as potential alternate gate insulators replacing low-k SiO 2 in electronic devices. Therefore, for FETs, direct fabrication of graphene materials on top of high-k dielectrics, such as ZrO 2 , without further transferring process will be of great importance.…”

Section: Doi: 101002/aelm201700424mentioning

confidence: 99%

Field Effect Transistors Based on In Situ Fabricated Graphene Scaffold–ZrO₂ Nanofilms

Pang

Chen

Wang

et al. 2017

Adv Elect Materials

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using Cu [11] or Ni [12] as metal catalysts could be a preferred strategy for largescale production of uniform graphene with large domain size. However, it usually requires an additional transfer process for fabricating graphene onto substrates, which is tedious and may affect the physical properties of graphene. [13] On the other hand, dielectric materials are of crucial importance in FETs because improved capacitance could be achieved by using gate dielectric layer for sufficient resistance (reduced gate leakage). [14,15] High-k dielectrics such as Al 2 O 3 , [16,17] HfO 2 , [18,19] and ZrO 2 [20,21] have been extensively used for the graphene-based FETs with nanometer regime, and emerged as potential alternate gate insulators replacing low-k SiO 2 in electronic devices. Therefore, for FETs, direct fabrication of graphene materials on top of high-k dielectrics, such as ZrO 2 , without further transferring process will be of great importance.Previously, we fabricated graphene scaffold−ZrO 2 nanofilms in situ on the SiO 2 substrates by spin coating and thermal annealing of a Zr-based metal-organic oligomer (Figure 1a). [22] The obtained nanofilm possesses heterostructure with ultrathin carbon layer formed on top of the ZrO 2 layer. The carbon layer shows a low sheet resistance of 17 kΩ per square, corresponding to 3197 S m −1 in electrical conductivity. In this study, we further investigated the detailed structural and electric characteristics of the obtained graphene scaffold−ZrO 2 nanofilms. Small angle X-ray reflectivity (XRR) confirms the heterostructure of the nanofilm, and a typical nanofilm is composed of ≈3.5 nm of carbon on top of ≈21.4 nm ZrO 2 layer. The resulting nanofilm on Si substrate shows a dielectric constant of ≈15.7, which is comparable to other high-k materials such as Y 2 O 3 (≈15). The developed in situ strategy could be further utilized to build multilayer heterostructural films, such as graphene-ZrO 2 / Al 2 O 3 nanofilms on Si substrate, providing potential opportunities in building multilayer devices with various substrates. Further fabricating it into ionic liquid-gated electric double layer transistors (EDLTs) demonstrated the p-type channel characteristic of the graphene scaffold, with a current on-off ratio (I on /I off ) of ≈2.1. With these desired structural and electric characteristics, we successfully integrated the graphene scaffold− ZrO 2 nanofilm into FETs with lateral architecture by applying either shadow masks or photolithography during electrode deposition, and these p-type FETs show notable I on /I off ratio.

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Direct transfer of graphene and application in low-voltage hybrid transistors

Abstract: Scotch tape assisted direct transfer of graphene is presented. Transferred graphene can act as a carrier transport layer in In2O3/graphene/ZrO2transistor.

Cited by 19 publications

References 57 publications

Low-Voltage-Operating Transistors and Logic Circuits Based on a Water-Driven ZrGdO_x Dielectric with Low-Cost ZnSnO

Low-Voltage-Operating Transistors and Logic Circuits Based on a Water-Driven ZrGdO_x Dielectric with Low-Cost ZnSnO

Graphene Transfer: Paving the Road for Applications of Chemical Vapor Deposition Graphene

Field Effect Transistors Based on In Situ Fabricated Graphene Scaffold–ZrO₂ Nanofilms

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Direct transfer of graphene and application in low-voltage hybrid transistors

Abstract: Scotch tape assisted direct transfer of graphene is presented. Transferred graphene can act as a carrier transport layer in In2O3/graphene/ZrO2transistor.

Cited by 19 publications

References 57 publications

Low-Voltage-Operating Transistors and Logic Circuits Based on a Water-Driven ZrGdOx Dielectric with Low-Cost ZnSnO

Low-Voltage-Operating Transistors and Logic Circuits Based on a Water-Driven ZrGdOx Dielectric with Low-Cost ZnSnO

Graphene Transfer: Paving the Road for Applications of Chemical Vapor Deposition Graphene

Field Effect Transistors Based on In Situ Fabricated Graphene Scaffold–ZrO2 Nanofilms

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Product

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Low-Voltage-Operating Transistors and Logic Circuits Based on a Water-Driven ZrGdO_x Dielectric with Low-Cost ZnSnO

Low-Voltage-Operating Transistors and Logic Circuits Based on a Water-Driven ZrGdO_x Dielectric with Low-Cost ZnSnO

Field Effect Transistors Based on In Situ Fabricated Graphene Scaffold–ZrO₂ Nanofilms