Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Sun, Guangzhuang; Li, Bo; Li, Jia; Zhang, Zhengwei; Ma, Hongchao; Chen, Peng; Zhao, Bei; Wu, Ruixia; Dang, Weiqi; Yang, Xiangdong; Tang, Xuwan; Dai, Chen; Huang, Ziwei; Liu, Yuan; Duan, Xidong; Duan, Xiangfeng

doi:10.1007/s12274-019-2364-1

Cited by 77 publications

(54 citation statements)

References 70 publications

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“…Such materials have relevance to transistor (opto)electronics, hence various interfaces are formed via non-colloidal methods. 180 The strong van der Waals (vdW) interactions between 2D layered materials such as graphene, 181,182 phosphorene, 183,184 transition metal dichalcogenides (TMDC), 185,186 graphitic carbon nitride, 187,188 and hexagonal boron nitride (h-BN) 189 allow numerous opportunities to interface 2D-2D materials. The vdW interactions are a fascinating synthetic approach as it can direct the integration of mixed dimensionalities ranging from 0D to 3D complex structures into a variety of devices and architectures.…”

Section: Transition-metal-nonmetal Compounds and Other Materialsmentioning

confidence: 99%

Metal/semiconductor interfaces in nanoscale objects: synthesis, emerging properties and applications of hybrid nanostructures

Volokh

Mokari

2020

Nanoscale Adv.

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Section: Transition-metal-nonmetal Compounds and Other Materialsmentioning

confidence: 99%

Metal/semiconductor interfaces in nanoscale objects: synthesis, emerging properties and applications of hybrid nanostructures

Volokh

Mokari

2020

Nanoscale Adv.

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“…[ 9–19 ] On the one hand, mixed dimensional devices have also been studied beyond 2D‐based devices, inspired by the possibility of any novel synergy effects which might come from the properties of 1D–2D mixed device structures. [ 20–31 ] Since 1D nanowire or nanotube has drawn some attraction due to their conducting and semiconducting properties, those could be used for a thin gate electrode or semiconductor channel to support 2D FETs. [ 23–31 ] According to previous literature, [ 24,31 ] 1D ZnO nanowire, n‐type semiconductor could play as a gate for 2D junction FET while it plays as a n‐channel to support 2D p‐channel ultimately for 1D–2D mixed CMOS inverter.…”

Section: Introductionmentioning

confidence: 99%

“…[ 20–31 ] Since 1D nanowire or nanotube has drawn some attraction due to their conducting and semiconducting properties, those could be used for a thin gate electrode or semiconductor channel to support 2D FETs. [ 23–31 ] According to previous literature, [ 24,31 ] 1D ZnO nanowire, n‐type semiconductor could play as a gate for 2D junction FET while it plays as a n‐channel to support 2D p‐channel ultimately for 1D–2D mixed CMOS inverter. However, those researches are still not that many, [ 23–31 ] leaving great expectations toward more advanced and novel applications.…”

Section: Introductionmentioning

confidence: 99%

“…[ 23–31 ] According to previous literature, [ 24,31 ] 1D ZnO nanowire, n‐type semiconductor could play as a gate for 2D junction FET while it plays as a n‐channel to support 2D p‐channel ultimately for 1D–2D mixed CMOS inverter. However, those researches are still not that many, [ 23–31 ] leaving great expectations toward more advanced and novel applications.…”

Section: Introductionmentioning

confidence: 99%

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2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications

Kim

Kang

Lee

et al. 2020

Adv Funct Materials

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Abstract2D transition metal dichalcogenides (TMDs) have been extensively studied due to their excellent physical properties. Mixed dimensional devices including 2D materials have also been studied, motivated by the possibility of any synergy effect from unique structures. However, only few such studies have been conducted. Here, semiconducting 1D ZnO nanowires are used as thin gate material to support 2D TMD field effect transistors (FETs) and 2D stack‐based interface trap nonvolatile memory. For the trap memory, deep level electron traps formed at the first MoS2/second MoS2 stack interface are exploited, since the first MoS2 is treated in an atomic layer deposition chamber for a short while. On the one hand, a complementary inverter type memory device can also be achieved using a long single ZnO wire as a common gate to simultaneously support both n‐ and p‐channel TMD FETs. In addition, it is found that the semiconducting ZnO nanowire itself operates as an n‐type channel when the TMD materials can become a top‐gate to charge the ZnO channel. It means that 2D (bottom gated) and 1D channel (top gated) FETs are respectively operational in a single device structure. The 1D–2D mixed devices seem deserving broad attention in both aspects of novelty and functionality.

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“…Moreover, the direct synthetic methods can form in‐plane mixed‐dimensional heterostructures that cannot be achieved by the transfer methods. Although the direct synthesis of vertical mixed‐dimensional vdW heterostructures has been achieved, [ 2,8–10 ] that of in‐plane mixed‐dimensional vdW heterostructures remains an outstanding challenge.…”

Section: Introductionmentioning

confidence: 99%

Mixed‐Dimensional In‐Plane Heterostructures from 1D Mo₆Te₆ and 2D MoTe₂ Synthesized by Te‐Flux‐Controlled Chemical Vapor Deposition

Kim

Johns

Yoo

2020

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Mixed‐dimensional van der Waals heterostructures are scientifically important and practically useful because of their interesting exotic properties resulting from their novel hybrid structures. This study reports the composition‐ and phase‐selective fabrication of low‐dimensional molybdenum/tellurium (Mo/Te) compounds and the direct synthesis of mixed‐dimensional in‐plane 1D–2D Mo6Te6–MoTe2 heterostructures. The composition and phase of the Mo/Te compounds are controlled by changing the Te atomic flux that is adjusted by the Te temperature. Metallic 1D Mo6Te6 wires with an intrinsic 1D structure with a diameter of 3–8 nm and length of 100–300 nm are synthesized to form wire networks under low Te flux conditions, whereas the semiconducting few‐layer 2H MoTe2 films preferentially oriented along the <0001> direction are obtained under high Te flux. Under medium Te flux, the mixed‐dimensional in‐plane 1D–2D Mo6Te6–MoTe2 heterostructures are synthesized in which the semiconducting few‐layer 2H MoTe2 circular domains are edge‐contacted by the metallic 1D Mo6Te6 wire networks. Furthermore, the present Te‐flux‐controlled method reveals that the 1D Mo6Te6 networks change to few‐layer MoTe2 films as the Te flux increases. The in‐plane 1D–2D Mo6Te6–MoTe2 heterostructures synthesized by this method can be considered as advanced edge‐contacted 2D semiconductors for high‐performance 2D electronics.

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Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Cited by 77 publications

References 70 publications

Metal/semiconductor interfaces in nanoscale objects: synthesis, emerging properties and applications of hybrid nanostructures

Metal/semiconductor interfaces in nanoscale objects: synthesis, emerging properties and applications of hybrid nanostructures

2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications

Mixed‐Dimensional In‐Plane Heterostructures from 1D Mo₆Te₆ and 2D MoTe₂ Synthesized by Te‐Flux‐Controlled Chemical Vapor Deposition

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Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Cited by 77 publications

References 70 publications

Metal/semiconductor interfaces in nanoscale objects: synthesis, emerging properties and applications of hybrid nanostructures

Metal/semiconductor interfaces in nanoscale objects: synthesis, emerging properties and applications of hybrid nanostructures

2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications

Mixed‐Dimensional In‐Plane Heterostructures from 1D Mo6Te6 and 2D MoTe2 Synthesized by Te‐Flux‐Controlled Chemical Vapor Deposition

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Mixed‐Dimensional In‐Plane Heterostructures from 1D Mo₆Te₆ and 2D MoTe₂ Synthesized by Te‐Flux‐Controlled Chemical Vapor Deposition