“…b) The α R and E so as a function of carrier density. c) Comparative graph of Rashba coefficients mainly extracted from the transport measurements of various mainstream 2DESs for low‐power spintronics, including KTO‐based systems (Al/KTaO 3 with g ‐factor of 0.5–2, [ 48 ] and the related value extracted from ARPES is marked as rhombus, [ 56 ] γ ‐Al 2 O 3 /KTaO 3 , [ 44 ] EuO/KTaO 3 , [ 49 ] aLaAlO 3 /KTaO 3 [ 20 ] ), STO‐based systems (LaAl 1− x Mn x O 3 /SrTiO 3 (0 ≤ x ≤ 1), [ 31 ] γ ‐Al 2 O 3 /SrTiO 3 , [ 34 ] LaAlO 3 /SrTiO 3 , [ 8 ] LaAl 1− x Cr x O 3 /SrTiO 3 ( x = 0,0.1,0.2), [ 50 ] NiFe/LAO//STO [ 10 ] ) and semiconductors (InAlAs/InGaAs/InAlAs, [ 35 ] GaSe, [ 41 ] InP/InGaAs/InAlAs, [ 51 ] InGaAs/InAlAs, [ 52 ] GaN/AlGaN, [ 53 ] InSb, [ 37 ] InAs [ 54 ] ).…”