Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE

Boćkowski, Michał; Grzegory, I.; Krukowski, S.; Łucznik, B.; Romanowski, Zbigniew; Wróblewski, M.; Borysiuk, J.; Weyher, J.L.; Hageman, P.R.; Porowski, S.

doi:10.1016/s0022-0248(02)01742-6

Cited by 33 publications

(38 citation statements)

References 10 publications

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“…Moreover, κ room = 227 W/m × K, reported for HVPE GaN sample from Ref. [11] is similar to the value of κ room found in the sample #1. The both samples represent high thermal conductivity substrate material very suitable for high power applications in the field of blue-ultraviolet optoelectronics and GaN/AlGaN based electronics.…”

Section: Resultssupporting

confidence: 87%

“…We expect that it is caused by an additional contribution of point defects to the thermal resistivity of the samples #2 and #3 with respect to sample #1 (the dislocation density in all used bulk GaN crystals is low). As it is seen from Table 1 pour phase epitaxy (HVPE) film was grown on Ga-polarity face of bulk GaN crystal (70 µm thick) [11]. The layer was 100 µm thick with electron concentration below 10 17 cm -3 .…”

Section: Resultsmentioning

confidence: 99%

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Thermal conductivity of GaN crystals grown by high pressure method

Jeżowski

Stachowiak

Plackowski

et al. 2003

Physica Status Solidi (b)

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Results of measurements of thermal conductivity κ of bulk GaN crystals in the temperature interval 4.2-300 K are reported. Experiments were performed on three types of GaN material: (i) single, highpressure grown GaN crystals showing highly n-type conductivity, (ii) on bulk Mg doped GaN crystals with slightly p-type conductivity, (iii) on homoepitaxial GaN layer grown by hydride vapour phase epitaxy (HVPE) on bulk GaN crystal. For the n-GaN crystals, the record thermal conductivity value κ max is equal to 1600 W/m × K at T max = 45 K, and κ ≅ 230 W/m K at 300 K. It is suggested that for this crystal and for T ≥ T max the contribution of Umklapp phonon scattering processes dominate in the heat transport processes. A heavily Mg doped crystal and HVPE GaN layer on bulk GaN show much lower thermal conductivity in the whole applied temperature region. The temperature dependence of κ shows the importance of point defects (impurities, vacancies) in determination of the thermal resistance of GaN bulk crystals.

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Thermal conductivity of GaN crystals grown by high pressure method

Jeżowski

Stachowiak

Plackowski

et al. 2003

Physica Status Solidi (b)

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“…Free-electron concentration is of 3-5·10 19 /cm 3 , due to oxygen content [7]. Threading dislocation density is of 1-100/cm 2 [3]. The substrates are highly conductive.…”

Section: Experimental and Resultsmentioning

confidence: 99%

“…Thicker epitaxial layers (10-200 µm) are grown by HVPE method, on the Ga-face of the substrates, with a home-made, horizontal system using a quartz reactor [3], in atmospheric pressure. The carrier gas is N 2 , the nitrogen source is ammonia.…”

Section: Experimental and Resultsmentioning

confidence: 99%

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Bowing of GaN bulk crystals with mismatched epitaxial structures of (AlInGa)N

Sarzynski

Kryśko

Czernecki

et al. 2005

phys. stat. sol. (c)

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We measured the bowing of structures consisting of epitaxial layers on bulk GaN substrates. The bowing is a result of lattice mismatch between layers and substrate. The layers were grown by HVPE (Hydride Vapor Phase Epitaxy) and MOVPE (Metalorganic Vapor Phase Epitaxy) techniques. The substrates are produced using high-temperature, high pressure method. In the present paper, the results of bowing measurements are presented compared with theoretical calculations. Based on the results, critical radius of bowing is estimated.

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