Directly induced ablation of metal thin films by ultrashort laser pulses

Heise, G.; Konrad, Jan; Sarrach, Sebastian; Sotrop, Jürgen; Huber, Heinz P.

doi:10.1117/12.876451

Cited by 10 publications

(2 citation statements)

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“…Typically the panels are structured to more than hundred cells to achieve a current-voltage characteristics suited for high energy extraction. The three scribing patterns P1, P2 and P3 form the integrated circuits for cell connection on the module [10,11].…”

Section: Structuring Of Organic Solar Cell (P2 Scribing)mentioning

confidence: 99%

High Q femtoREGEN^TMUC laser systems for industrial microprocessing applications

Matylitsky¹,

Kubiš

Brabec

et al. 2012

SPIE Proceedings

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High average power, high repetition rate femtosecond lasers with µJ pulse energies are increasingly used for bio-medical and material processing applications. With the introduction of femtosecond laser systems such as the High Q femtoREGEN TM UC platform, micro-processing of solid targets with femtosecond laser pulses have obtained new perspectives for industrial applications. The unique advantage of material processing with sub-picosecond lasers is efficient, fast and localized energy deposition, which leads to high ablation efficiency and accuracy in nearly all kinds of solid materials. In this paper, we will show aspects of the design and performance of the femtoREGEN TM UC industrial laser system and give an overview of actual applications.

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Section: Structuring Of Organic Solar Cell (P2 Scribing)mentioning

confidence: 99%

High Q femtoREGEN^TMUC laser systems for industrial microprocessing applications

Matylitsky¹,

Kubiš

Brabec

et al. 2012

SPIE Proceedings

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show abstract

“…Thus, a simple thermo dynamical model was developed: It is assumed that ultra-short pulse laser irradiation initiates partial evaporation of the metal film, resulting in a gas expansion that is driving the bulging of the metal film. Then, a metal disk shears-and lifts-off when the tensile stress limit is exceeded [11].…”

Section: Introductionmentioning

confidence: 99%

Time and space resolved microscopy of induced ablation with ultra-short laser pulses

et al. 2012

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Laser lift-off processes have been observed during structuring CIS thin film solar cells with ultra-short laser pulses, if a Mo film on glass is irradiated from the glass substrate side. To investigate the underlying physical effects, ultrafast pump-probe microscopy is used for time-and space resolved investigations. The setup utilizes a 660 fs-laser pulse at a wavelength of 1053 nm that is split up into a pump and a probe pulse. The pump pulse ablates the thin film, while the frequency doubled probe pulse illuminates the ablation area after an optically defined delay time of up to 4 ns. For longer delay times, a second electronically triggered 600 ps-laser is used for probing. Thus, the complete ultra fast pulse initiated ablation process can be observed in a delay time range from femtoseconds to microseconds.First experiments on the directly induced ablation of molybdenum films from the glass substrate side show that mechanical deformation is initiated at about 400 ps after the impact of the pump laser pulse. The deformation continues until approximately 15 ns, then a Mo disk shears and lifts-off with a velocity of above 70 m/s free from thermal effects.

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Threshold Fluence Measurement for Laser Liftoff of InP Thin Films by Selective Absorption

et al. 2017

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We explore conditions for achieving laser liftoff in epitaxially grown heterojunctions, in which single crystal thin films can be separated from their growth substrates using a selectively absorbing buried intermediate layer. Because this highly non‐linear process is subject to a variety of process instabilities, it is essential to accurately characterize the parameters resulting in liftoff. Here, we present an InP/InGaAs/InP heterojunction as a model system for such characterization. We show separation of InP thin films from single crystal InP growth substrates, wherein a ≈10 ns, Nd:YAG laser pulse selectively heats a coherently strained, buried InGaAs layer. We develop a technique to measure liftoff threshold fluences within an inhomogeneous laser spatial profile, and apply this technique to determine threshold fluences of the order 0.5 J cm−2 for our specimens. We find that the fluence at the InGaAs layer is limited by non‐linear absorption and InP surface damage at high powers, and measure the energy transmission in an InP substrate from 0 to 8 J cm−2. Characterization of the ejected thin films shows crack‐free, single crystal InP. Finally, we present evidence that the hot InGaAs initiates a liquid phase front that travels into the InP substrate during liftoff.

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Directly induced ablation of metal thin films by ultrashort laser pulses

Cited by 10 publications

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High Q femtoREGEN^TMUC laser systems for industrial microprocessing applications

High Q femtoREGEN^TMUC laser systems for industrial microprocessing applications

Time and space resolved microscopy of induced ablation with ultra-short laser pulses

Threshold Fluence Measurement for Laser Liftoff of InP Thin Films by Selective Absorption

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Directly induced ablation of metal thin films by ultrashort laser pulses

Cited by 10 publications

References 0 publications

High Q femtoREGENTMUC laser systems for industrial microprocessing applications

High Q femtoREGENTMUC laser systems for industrial microprocessing applications

Time and space resolved microscopy of induced ablation with ultra-short laser pulses

Threshold Fluence Measurement for Laser Liftoff of InP Thin Films by Selective Absorption

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Product

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High Q femtoREGEN^TMUC laser systems for industrial microprocessing applications

High Q femtoREGEN^TMUC laser systems for industrial microprocessing applications