Directly modulated buried heterostructure DFB laser on SiO_2/Si substrate fabricated by regrowth of InP using bonded active layer

Abstract

We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO₂/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO₂/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate high-efficiency lasers at a low cost.

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

“…Direct modulation of laser diodes for high-speed transceivers has significant advantages over the use of external modulators in terms of power consumption, fabrication complexity and compactness [21][22][23][24][25], especially for short distance optical interconnects. High-speed directly modulated lasers on the InP platform and bonded to a silicon substrate have been demonstrated recently [21][22][23]. Given the mentioned advantages of silicon photonics, it would be desirable to have directly modulated lasers with a high modulation bandwidth, heterogeneously integrated on and coupled to silicon PICs.…”

28 Gb/s direct modulation heterogeneously integrated C-band InP/SOI DFB laser

“…Direct modulation of laser diodes for high-speed transceivers has significant advantages over the use of external modulators in terms of power consumption, fabrication complexity and compactness [14][15][16][17][18], especially for short distance optical interconnects. As has been discussed in [1,2], MZ based modulators require a long interaction length (~mm's) if a low drive voltage is desired.…”

“…They also suffer from substantial insertion loss, which implies using a higher power laser source to compensate for the losses. High performance directly modulated lasers on an InP platform and bonded to a silicon substrate have been demonstrated recently [14][15][16]. Given the mentioned advantages of silicon photonics it would be desirable to have directly modulated transmitters with a high modulation bandwidth coupled to a silicon photonic integrated circuit.…”

Experimental demonstration of directly modulated buried heterostructure DFB semiconductor laser based on reconstruction equivalent chirp technique

“…However, due to the sampling structure, the effective index coupling coefficient of DFB lasers based on REC technique reduces to 1/π of which of conventional DFB lasers, causing the threshold current much higher and the direct modulation performance worse [5]. As a consequence, a buried heterostructure (BH) waveguide is put in use to lower the threshold current and enhance the direct modulation performance [10,11]. In this article, a 1310nm DFB laser with low threshold current of 10 mA is experimentally demonstrated.…”