Disappearance and recovery of colossal permittivity in (Nb+Mn) co-doped TiO2

Yang, Chao; Wei, Xianhua; Hao, Jian

doi:10.1016/j.ceramint.2018.04.028

Cited by 48 publications

(16 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…reason, the annealing process was modifying the defect equilibrium that may re crystallinity on the surface. The Raman active modes (i.e., B1g, Eg, and A1g) were o The A1g peak corresponded to the symmetric stretching of the O-Ti-O bonds plane, while the Eg peak was due to oxygen atom liberation along with the c-ax out of phase [17,[36][37][38]. The peak positions of the Eg and A1g modes are summa Table 1.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Origins of Giant Dielectric Properties with Low Loss Tangent in Rutile (Mg1/3Ta2/3)0.01Ti0.99O2 Ceramic

et al. 2021

View full text Add to dashboard Cite

The Mg2+/Ta5+ codoped rutile TiO2 ceramic with a nominal composition (Mg1/3Ta2/3)0.01Ti0.99O2 was synthesized using a conventional solid-state reaction method and sintered at 1400 °C for 2 h. The pure phase of the rutile TiO2 structure with a highly dense microstructure was obtained. A high dielectric permittivity (2.9 × 104 at 103 Hz) with a low loss tangent (<0.025) was achieved in the as-sintered ceramic. After removing the outer surface, the dielectric permittivity of the polished ceramic increased from 2.9 × 104 to 6.0 × 104, while the loss tangent also increased (~0.11). The dielectric permittivity and loss tangent could be recovered to the initial value of the as-sintered ceramic by annealing the polished ceramic in air. Notably, in the temperature range of −60–200 °C, the dielectric permittivity (103 Hz) of the annealed ceramic was slightly dependent (<±4.4%), while the loss tangent was very low (0.015–0.036). The giant dielectric properties were likely contributed by the insulating grain boundaries and insulative surface layer effects.

show abstract

Section: Resultsmentioning

confidence: 99%

“…The Raman active modes (i.e., B 1g , E g , and A 1g ) were observed. The A 1g peak corresponded to the symmetric stretching of the O-Ti-O bonds in [110] plane, while the E g peak was due to oxygen atom liberation along with the c-axis being out of phase [17,[36][37][38]. The peak positions of the E g and A 1g modes are summarized in Table 1.…”

Section: Resultsmentioning

confidence: 99%

Origins of Giant Dielectric Properties with Low Loss Tangent in Rutile (Mg1/3Ta2/3)0.01Ti0.99O2 Ceramic

et al. 2021

View full text Add to dashboard Cite

show abstract

“…Solid state ceramic materials with high dielectric permittivity play a vital role in improving the energy storage density and miniaturization of devices 1‐3 . TiO 2 ‐based ceramics with colossal permittivity and low dielectric loss over a broad frequency and temperature range have drawn intensive attention since Hu et al, reported In 3+ /Nb 5+ co‐doped rutile TiO 2 ceramics 4‐17 . For example, (Al 0.5 Ta 0.5 ) 0.08 Ti 0.92 O 2 ceramics exhibited an especially high dielectric permittivity (6.55 × 10 4 ) and a low dielectric loss (<0.05) which are almost frequency independent over the range of 10 2 –10 6 Hz 17 .…”

Section: Introductionmentioning

confidence: 99%

“…1-3 TiO 2 -based ceramics with colossal permittivity and low dielectric loss over a broad frequency and temperature range have drawn intensive attention since Hu et al, reported In 3+ /Nb 5+ co-doped rutile TiO 2 ceramics. [4][5][6][7][8][9][10][11][12][13][14][15][16][17] For example, (Al 0.5 Ta 0.5 ) 0.08 Ti 0.92 O 2 ceramics exhibited an especially high dielectric permittivity (6.55 × 10 4 ) and a low dielectric loss (<0.05) which are almost frequency independent over the range of 10 2 -10 6 Hz. 17 Good temperature stability (permittivity varies within 7% from −70°C to 180°C) was achieved in In 3+ /Nb 5+ co-doped TiO 2 ceramics, which meets the application requirements of X8F ceramic capacitors.…”

mentioning

confidence: 99%

Good dielectric performance and broadband dielectric polarization in Ag, Nb co‐doped TiO₂

Liang

Zhu

et al. 2021

J Am Ceram Soc

View full text Add to dashboard Cite

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO2‐based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag+/Nb5+ co‐doped (Ag1/4Nb3/4)xTi1−xO2 (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 103 and 1.6 × 104 at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron‐pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.

show abstract

“…With the discovery of superior colossal permittivity (CP) behavior in (Nb + In) co‐doped TiO 2 (NITO), a current burst of research activities on dual doping of TiO 2 ceramics have been stimulated. After a wealth of experimental investigations, several mechanisms, such as electron‐pinned defect‐dipole, surface barrier layer capacitor model, internal barrier layer capacitor model, surface layer effect, electron polarization, and non‐Ohmic sample‐electrode contact, had been proposed to account for this behavior. Hence, there is an ongoing debate regarding the exact origin for the CP behavior in the co‐doped TiO 2 system.…”

Section: Introductionmentioning

confidence: 99%

Low‐temperature Maxwell‐Wagner relaxation in (Na + Nb) co‐doped rutile TiO₂ colossal permittivity ceramics

Wang

Xie

et al. 2019

J Am Ceram Soc

View full text Add to dashboard Cite

The exact mechanism of the stunning colossal permittivity behavior found in (donor‐acceptor) co‐doped TiO2 system still remains enigmatic. This behavior results from a thermally activated dielectric relaxation occurring below 50 K. Herein, thermally stimulated depolarization current analysis combined with dielectric investigation was used to disentangle this relaxation in (Na + Nb) co‐doped TiO2 ceramics. We find that this relaxation is related to frozen electrons and features the Vogel‐Fulcher behavior and negative dielectric tunability. Our results reveal that this low‐temperature relaxation is a new kind of Maxwell‐Wagner relaxation. Differences between the low‐temperature Maxwell‐Wagner relaxation and its high‐temperature counterpart are discussed. This study provides new insights into the physics of the eye‐catching dielectric properties in co‐doped TiO2 system.

show abstract

Disappearance and recovery of colossal permittivity in (Nb+Mn) co-doped TiO2

Cited by 48 publications

References 41 publications

Origins of Giant Dielectric Properties with Low Loss Tangent in Rutile (Mg1/3Ta2/3)0.01Ti0.99O2 Ceramic

Origins of Giant Dielectric Properties with Low Loss Tangent in Rutile (Mg1/3Ta2/3)0.01Ti0.99O2 Ceramic

Good dielectric performance and broadband dielectric polarization in Ag, Nb co‐doped TiO₂

Low‐temperature Maxwell‐Wagner relaxation in (Na + Nb) co‐doped rutile TiO₂ colossal permittivity ceramics

Contact Info

Product

Resources

About

Disappearance and recovery of colossal permittivity in (Nb+Mn) co-doped TiO2

Cited by 48 publications

References 41 publications

Origins of Giant Dielectric Properties with Low Loss Tangent in Rutile (Mg1/3Ta2/3)0.01Ti0.99O2 Ceramic

Origins of Giant Dielectric Properties with Low Loss Tangent in Rutile (Mg1/3Ta2/3)0.01Ti0.99O2 Ceramic

Good dielectric performance and broadband dielectric polarization in Ag, Nb co‐doped TiO2

Low‐temperature Maxwell‐Wagner relaxation in (Na + Nb) co‐doped rutile TiO2 colossal permittivity ceramics

Contact Info

Product

Resources

About

Good dielectric performance and broadband dielectric polarization in Ag, Nb co‐doped TiO₂

Low‐temperature Maxwell‐Wagner relaxation in (Na + Nb) co‐doped rutile TiO₂ colossal permittivity ceramics