Discharge Characteristics of an Atmospheric Dielectric-Barrier Discharge Jet

Qian, Min; Yang, Cong-Ying; Liu, Sanqiu; Ni, Gengsong; Zhang, Jialiang

doi:10.1109/tps.2015.2418812

Cited by 7 publications

(5 citation statements)

References 22 publications

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“…This characteristic indicates a typical dielectric barrier discharge. 3,[27][28][29][30] The characteristics of plasma discharge depend on discharge gap. However, it is difficult to change the discharge gap in this APPJ system because the syringe diameter must change.…”

Section: Resultsmentioning

confidence: 99%

“…The atmospheric-pressure plasma jet (APPJ) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] has been expected to be an attractive plasma tool for the surface treatment of plastic and metal materials, [1][2][3][4][5][6][7][8][9][10] particle generation, [11][12][13][14][15] and the inactivation of bacteria. [16][17][18][19][20] This is because the APPJ does not require an expensive highvacuum pumping system and a simple setup can produce the plasma without difficulty.…”

Section: Introductionmentioning

confidence: 99%

“…SiO 2 , Si, and SiN have been dry-etched [21][22][23] using radiofrequency (RF) plasma at a low gas pressure using fluorocarbon gases in the microelectronics industry. Recently, from the viewpoint of saving energy, APPJ sources [1][2][3] have been investigated for the surface treatment of silicon wafers and plastic plates. Ichiki and co-workers [24][25][26] have developed a scanning atmospheric-pressure microplasma jet system for the maskless etching of silicon wafers and attained the maximum etch rate of approximately 0.5 mm=min and the minimum etch diameter of approximately 0.3 mm at an RF power of 50 W and a SF 6 flow rate of 160 sccm.…”

Section: Introductionmentioning

confidence: 99%

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Atmospheric-pressure plasma jet system for silicon etching without fluorocarbon gas feed

Ohtsu¹,

Nagamatsu²

2017

Jpn. J. Appl. Phys.

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We developed an atmospheric-pressure plasma jet (APPJ) system with a tungsten rod electrode coated with C 2 F 4 particles of approximately 0.3 µm diameter for the surface treatment of a silicon wafer. The APPJ was generated by dielectric barrier discharge with a driving frequency of 22 kHz using a He gas flow. The characteristics of the APPJ were examined under various experimental conditions. The plasma jet length increased proportionally to the electric field. It was found that the treatment area of the silicon wafer was approximately 1 mm in diameter. By atomic force microscopy analysis, minute irregularities with a maximum length of about 600 nm and part of a ring-shaped trench were observed. A Si etching rate of approximately 400 nm/min was attained at a low power of 6 W and a He flow rate of 1 L/min without introducing molecular gas including F atoms.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Atmospheric-pressure plasma jet system for silicon etching without fluorocarbon gas feed

Ohtsu¹,

Nagamatsu²

2017

Jpn. J. Appl. Phys.

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“…Analysis of Table 3 reveals a decrease in 𝑇 𝑔 for both Ar and N2, from 408 K to 320 K and from 689 K to 435 K, respectively, corresponding to an increase in Q under identical conditions. Qian et al [52] and Hong et al [53] reported 374 K and 550 K values of 𝑇 𝑔 for N2 at 1 and 2 SLPM [52,53]. Sohbatzadeh et al [49] reported 373 K of 𝑇 𝑔 for Ar at 10 SLPM [49].…”

Section: Effect Of Q On 𝑻 𝒈 and 𝑽 𝒃𝒅mentioning

confidence: 99%

Investigating Flow-Induced Changes in Coaxial Cylindrical Dielectric Barrier Discharge Using Equivalent Circuit Modelling and Chemical Workbench Simulations

Pathak,

Jayanarasimhan,

Nandi

et al. 2024

Preprint

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This study presents the development of an equivalent electrical circuit model using MATLAB/Simulink to simulate the discharge behaviour of a coaxial cylindrical dielectric barrier discharge (DBD) and explores the influence of the flow regime on its electrical characteristics. Validation of the experimental findings was performed using Chemical Workbench (CWB). The simulations provided valuable insights into the DBD behaviour, facilitating its performance optimization. The equivalent circuit model demonstrated accurate predictions of peak current amplitude\({ (I}_{peak})\), root mean square of total current \(\left({ I}_{rms }\right)\), and microfilament discharge resistance \(\left({ R}_{f }\right)\). The study unveiled a significant impact of the flow regime on the electrical properties of the DBD. As the flow rate (Q) transitioned from the laminar flow regime (Reynolds number, Re = 300) to the turbulent flow regime (Re = 4500), the peak current \({ (I}_{peak})\) exhibited an increase from 60 mA to 80 mA for Argon (Ar) and 90 mA to 140 mA for Nitrogen (N2) gas. Simultaneously, the \({ R}_{f }\) decreased from 3.0 mΩ to 0.6 mΩ for Ar and 2.0 mΩ to 0.1 mΩ for N2. The impact of the flow regime on \({ R}_{f }\) was analyzed using the Peclet number (Pe) to gain a better understanding of heat/mass transport from the discharge to the surroundings. The MATLAB/Simulink and CWB models corroborated these findings, demonstrating excellent agreement with the experimental results. This validation underscores the reliability of the models in effectively characterizing the discharge parameters of the DBD.

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“…There are several plasma jet devices in use today [16][17][18][19][20][21][22], and their specific designs differ depending on the application. The general design of these plasma sources consists of a dielectric tube, a high voltage (HV) electrode placed either around the tube or inside it, and gas flowing through the tube.…”

Section: Introductionmentioning

confidence: 99%

The effect of Penning ionization reactions on the evolution of He with O₂ admixtures plasma jets

Lazarou

Anastassiou

Topală

et al. 2023

J. Phys. D: Appl. Phys.

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In this study, the effect of the O2 and N2 Penning ionization reactions on the evolution a capillary helium atmospheric pressure plasma jet (APPJ) with and without the presence of oxygen admixtures is investigated numerically using a two dimensional axi-symmetric model. In order to better understand potential applications of plasma surface interaction, the He and He+O2 (1000 ppm) APPJ is launched into a dielectric target. Moreover, the numerical model is compared with experimental measurements showing that the model captures the right physics and can elucidate the discharge dynamics. The comparison is realized for axial and radial measurements in order to have a complete picture of the plasma jet evolution. In this paper, the velocity and the shape of the plasma guided streamer were chosen as indicators of plasma jet evolution. In particular, the investigation is accomplished experimentally by tracking the spatio-temporal resolved emission of 706.5 nm (3s3S → 2p3P) line and numerically by calculating the reaction rate for the same transition. The O2 and N2 Penning reactions are then independently considered in the numerical model in order to isolate their contribution to the plasma evolution. It is shown that for the pure helium plasma, the N2 Penning reactions are more important to the plasma evolution. However, when oxygen admixtures are added to the plasma gas, the O2 Penning reactions become more important than the N2 ones.

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Discharge Characteristics of an Atmospheric Dielectric-Barrier Discharge Jet

Cited by 7 publications

References 22 publications

Atmospheric-pressure plasma jet system for silicon etching without fluorocarbon gas feed

Atmospheric-pressure plasma jet system for silicon etching without fluorocarbon gas feed

Investigating Flow-Induced Changes in Coaxial Cylindrical Dielectric Barrier Discharge Using Equivalent Circuit Modelling and Chemical Workbench Simulations

The effect of Penning ionization reactions on the evolution of He with O₂ admixtures plasma jets

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Discharge Characteristics of an Atmospheric Dielectric-Barrier Discharge Jet

Cited by 7 publications

References 22 publications

Atmospheric-pressure plasma jet system for silicon etching without fluorocarbon gas feed

Atmospheric-pressure plasma jet system for silicon etching without fluorocarbon gas feed

Investigating Flow-Induced Changes in Coaxial Cylindrical Dielectric Barrier Discharge Using Equivalent Circuit Modelling and Chemical Workbench Simulations

The effect of Penning ionization reactions on the evolution of He with O2 admixtures plasma jets

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Product

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The effect of Penning ionization reactions on the evolution of He with O₂ admixtures plasma jets