Discharge diagnosis and controlled deposition of SnOx:F films by DC-reactive sputtering from a metallic tin target

Martel, A.; Caballero‐Briones, F.; Fandiño, J.; Castro-Rodrı́guez, R.; Bartolo‐Pérez, P.; Zapata‐Navarro, A.; Zapata‐Torres, M.; Peña, J. L.

doi:10.1016/s0257-8972(99)00290-x

Cited by 17 publications

(4 citation statements)

References 13 publications

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“…For this, a gas (Ar-O2) mixture with fixed oxygen partial pressure was used. This experiment is helpful to relate the chemical composition of the films with the discharge parameters (12). The discharge power was varied between 20 to 200 W and the resulting cathodic voltage was recorded.…”

Section: Experimental Partmentioning

confidence: 99%

Durable Oxide-Based Catalysts for Application as Cathode Materials in Polymer Electrolyte Fuel Cells (PEFCs)

et al. 2013

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The goal of this work is the development of new oxide based highly active model catalysts for the oxygen reduction reaction in PEFCs. In this work, a description for the preparation of SnO2 thin films by reactive magnetron sputtering is given. The films are characterized using x-ray diffraction, x-ray photoelectron spectroscopy and electrochemical measurements. Composition and high potential stability of the SnO2 films was proven before its use as substrates for Pt model electrodes. Oxygen reduction kinetics on Pt/SnO2 demonstrates similar activities as compared to typical carbon based systems, an important prerequisite for further studies and development of SnO2 based electrocatalysts.

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Section: Experimental Partmentioning

confidence: 99%

Durable Oxide-Based Catalysts for Application as Cathode Materials in Polymer Electrolyte Fuel Cells (PEFCs)

et al. 2013

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“…A few attempts have been made to sputter FTO from solid targets using techniques such as RF magnetron sputtering [13]. More recent work deals with DC reactive magnetron sputtering using a metallic tin target and various plasma atmospheres such as Ar/O2/CF4 [10], Ar/O2/Freon [14].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

et al. 2014

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Fluorine doped tin oxide (FTO) coatings have been prepared using the mid-frequency pulsed DC closed field unbalanced magnetron sputtering technique in an Ar/O2 atmosphere using blends of tin oxide and tin fluoride powder formed into targets. FTO coatings were deposited with a thickness of 400 nm on glass substrates. No post-deposition annealing treatments were carried out. The effects of the chemical composition on the structural (phase, grain size), optical (transmission, optical band-gap) and electrical (resistivity, charge carrier, mobility) properties of the thin films were investigated. Depositing FTO by magnetron sputtering is an environmentally friendly technique and the use of loosely packed blended powder targets gives an efficient means of screening candidate compositions, which also provides a low cost operation. The best film characteristics were achieved using a mass ratio of 12% SnF2 to 88% SnO2 in the target. The thin film produced was polycrystalline with a tetragonal crystal structure. The optimized conditions resulted in a thin film with average visible transmittance of 83% and optical band-gap of 3.80 eV, resistivity of 6.71 × 10

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“…4) Various dopants, such as fluorine (F), antimony (Sb), palladium (Pd), tantalum (Ta), and molybdenum (Mo), [5][6][7][8][9] have been researched to improve the electrical and optical properties of SnO 2 thin films. Tin oxide thin films can be prepared using various methods such as sputtering, 10) solgel, 11) spray pyrolysis, 12) atmospheric pressure chemical vapor deposition (APCVD), 13) plasma assisted chemical deposition (PECVD), 14) and pulsed laser deposition (PLD). 15) However, APCVD exhibits the advantages of precise control of thickness, growth of large area films, and uniform coverage over the surface.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Chlorine Ions in Antimony-Doped Tin Oxide Thin Film Using Synchrotron Grazing Incidence X-ray Diffraction

Lin

et al. 2012

Jpn. J. Appl. Phys.

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Antimony-doped tin oxide (SnO2:Sb, ATO) films have been deposited on glass substrates using atmospheric pressure chemical vapor deposition (APCVD) method. The precursors are mixed with SnCl4, SbCl5, and O2 to prepare the films. This study used synchrotron grazing incidence X-ray diffraction (GIXRD) to investigate the film microstructure. Our results show that the precursors of chlorine ions were involved in the doping mechanism, causing the microstructure of films to change slightly. The film has an average transmittance between 85.8 and 82.1% within a visible spectral range from 400 to 800 nm. The minimal resistivity was 6.1×10-4 Ω cm after doping. The synchrotron GIXRD data show that the chlorine ions caused the lattice constant change. A possible mechanism was proposed to explain the enhancement in electrical property due to chlorine dopants.

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Discharge diagnosis and controlled deposition of SnOx:F films by DC-reactive sputtering from a metallic tin target

Cited by 17 publications

References 13 publications

Durable Oxide-Based Catalysts for Application as Cathode Materials in Polymer Electrolyte Fuel Cells (PEFCs)

Durable Oxide-Based Catalysts for Application as Cathode Materials in Polymer Electrolyte Fuel Cells (PEFCs)

Electrical and Optical Properties of Fluorine Doped Tin Oxide Thin Films Prepared by Magnetron Sputtering

Analysis of Chlorine Ions in Antimony-Doped Tin Oxide Thin Film Using Synchrotron Grazing Incidence X-ray Diffraction

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