Discharge voltage measurements during reactive sputtering of oxides

Depla, Diederik; Haemers, Johan; Gryse, Roger De

doi:10.1016/j.tsf.2005.12.256

Cited by 39 publications

(36 citation statements)

References 16 publications

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“…It can be seen that the rate decreased as both the amount of O 2 and/or the pressure increased. This is in good agreement with other experimental results and is characteristic of reactive magnetron sputtering [36,57]. Fig.…”

Section: Film Characterizationsupporting

confidence: 93%

Amorphous niobium oxide thin films

Ramirez

Rodil

Mühl

et al. 2010

Journal of Non-Crystalline Solids

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Section: Film Characterizationsupporting

confidence: 93%

Amorphous niobium oxide thin films

Ramirez

Rodil

Mühl

et al. 2010

Journal of Non-Crystalline Solids

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“…The discharge voltage measured during magnetron sputtering, at constant current and sputtering pressure (as in this work), is inversely proportional to the ion induced secondary electron emission (ISEE) coefficient of the target material [28], in agreement with equation (1) proposed by Thornton [27]: (1) A c c e p t e d M a n u s c r i p t 8 where W 0 stands for the effective ionisation energy (about 30 eV for Ar + ) [29],  i stands for the ion collection efficiency and  e for the fraction of the maximum number of ions (for magnetron sputtering  i and  e are close to unity). E represents the effective gas ionization probability and  ISEE for the ion induced secondary electron emission coefficient.…”

Section: Discharge Characteristics: Target Potential and Deposition Ratesupporting

confidence: 80%

“…These include the target condition, the magnetron configuration, target power and the discharge gases. For the present work, and given the similar deposition parameters that were selected, the target potential seems to be largely influenced by the composition of the target itself and by the processes that are occurring during sputtering, which reveals a strong influence of the plasma characteristics [26,27].…”

Section: Methodsmentioning

confidence: 93%

TiAgx thin films for lower limb prosthesis pressure sensors: Effect of composition and structural changes on the electrical and thermal response of the films

Lopes

Gonçalves

Pedrosa

et al. 2013

Applied Surface Science

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International audienceTitanium-silver, Ti-Ag, thin films display excellent biocompatibility and reveal great potential to be used as conductive materials for prosthesis pressure sensors. In the frame of this work, TiAgx thin films were deposited onto silicon and glass substrates by DC magnetron sputtering, using a pure Ti target containing different amounts of Ag pellets. The films display Ag/Ti ratios varying from 0 up to 0.36, resulting in relatively large range of composition, which gave rise to varied morphological, structural and some selected property responses. For Ag/Ti ratios below 3.0 × 10−3, the TiAgx films exhibited similar behavior to those of standard Ti films. Above this critical value, the role of Ag becomes crucial on the crystallographic structure evolution, as well as on the surface morphology changes of the films. A gradual increase of the Ag/Ti ratio leads to the growth of Ti-Ag crystalline phases, whereas the long range order of Ti grains was reduced from 22 nm down to 7 nm. Similarly, a denser microstructure was developed with a reduction of the sharpness of the surface morphology. This critical Ag/Ti ratio (<3.0 × 10−3) also corresponded to an enhanced electrical resistivity, which reached a value of ρ300K = 72 μΩ cm. The thermal characterization revealed a similar trend, with the existence of two clear distinct zones, related again with the different critical composition ratios and the correspondent changes in both morphology and structural features

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“…Our results are in good agreement with results published for reactive sputtering of titanium. 27 An increase in the discharge voltage is expected as a result of the decreased ion induced SEEC of oxidized and nitrided titanium.…”

Section: A Discharge Current and Voltage Waveforms In Continuous Spumentioning

confidence: 99%

Evolution of sputtering target surface composition in reactive high power impulse magnetron sputtering

Kubart

Aijaz

2017

Journal of Applied Physics

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Evolution of sputtering target surface composition in reactive high power impulse magnetron sputtering. The interaction between pulsed plasmas and surfaces undergoing chemical changes complicates physics of reactive High Power Impulse Magnetron Sputtering (HiPIMS). In this study, we determine the dynamics of formation and removal of a compound on titanium surface from the evolution of discharge characteristics in argon atmosphere with nitrogen and oxygen. We show that the time response of a reactive process is dominated by surface processes. Thickness of the compound layer is several nm and its removal by sputtering requires ion fluence in the order of 10 16 cm -2 , much larger than the ion fluence in a single HiPIMS pulse. Formation of the nitride or oxide layer is significantly slower in HiPIMS than in dc sputtering under identical conditions. Further, we explain very high discharge currents in HiPIMS by the formation of truly stoichiometric compound during the discharge off-time. The compound has very high secondary electron emission coefficient and leads to a large increase in the discharge current upon target poisoning. Journal of Applied Physics

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Discharge voltage measurements during reactive sputtering of oxides

Cited by 39 publications

References 16 publications

Amorphous niobium oxide thin films

Amorphous niobium oxide thin films

TiAgx thin films for lower limb prosthesis pressure sensors: Effect of composition and structural changes on the electrical and thermal response of the films

Evolution of sputtering target surface composition in reactive high power impulse magnetron sputtering

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