Discontinuous pn-Heterojunction for Organic Thin Film Transistors

Cho, Boeun; Yu, Seong Hun; Kim, Minwoo; Lee, Moo Hyung; Huh, Wansoo; Lee, Jiyoul; Kim, Jung-Wook; Cho, Jeong Ho; Lee, Jun Young; Song, Young Jae; Kang, Moon Sung

doi:10.1021/jp504114f

Cited by 14 publications

(14 citation statements)

References 47 publications

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“…The transferred graphene was patterned using conventional photolithography and reactive ion etching (RIE) (Figure S1, Supporting Information) . A 30 nm thick pentacene layer was then thermally deposited onto the patterned graphene electrodes, followed by an additional 90 nm thick PTCDI‐C 8 layer deposited onto the same location through a shadow mask . The deposition was performed using an organic molecular beam deposition (OMBD) system in sequence without breaking the vacuum to minimize defect formation at the junction.…”

Section: Resultsmentioning

confidence: 99%

Schottky‐Barrier‐Controllable Graphene Electrode to Boost Rectification in Organic Vertical P–N Junction Photodiodes

Kim

Choi

Woo

et al. 2017

Adv Funct Materials

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Monolayer graphene is used as an electrode to develop novel electronic device architectures that exploit the unique, atomically thin structure of the material with a low density of states at its charge neutrality point. For example, a single semiconductor layer stacked onto graphene can provide a semiconductor-electrode junction with a tunable injection barrier, which is the basis for a primitive transistor architecture known as the Schottky barrier field-effect transistor. This work demonstrates the next level of complexity in a vertical graphene-semiconductor architecture. Specifically, an organic vertical p-n junction (p-type pentacene/n-type N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 )) on top of a graphene electrode constituting a novel gate-tunable photodiode device structure is fabricated. The model device confirms that controlling the Schottky barrier height at the pentacene-graphene junction can (i) suppress the dark current density and (ii) enhance the photocurrent of the device, both of which are critical to improve the performance of a photodiode.

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Section: Resultsmentioning

confidence: 99%

Schottky‐Barrier‐Controllable Graphene Electrode to Boost Rectification in Organic Vertical P–N Junction Photodiodes

Kim

Choi

Woo

et al. 2017

Adv Funct Materials

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“…Remarkably, such a thin SAM maintains the property of effective lateral charge transport after bilayer stacking, which is generally a problem with the conventional bilayer structures. [29,30] To characterize the influence of thin film morphology on charge transport of the bilayer transistors, different substrate temperatures were applied during semiconductor evaporation ( Figure S3, Supporting Information). Optimizing charge carrier mobility of the BTBT-PA SAM and the PTCDI-Ph were obtained at a temperature of 80 °C.…”

Section: Resultsmentioning

confidence: 99%

Wafer‐Scale Organic Complementary Inverters Fabricated with Self‐Assembled Monolayer Field‐Effect Transistors

Zhao

Gothe

Sarcletti

et al. 2020

Adv Elect Materials

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Self‐assembled monolayers (SAMs) of π‐conjugated molecules can achieve robust charge transport by the formation of ordered 2D layers at the desired regions, which enable their application for organic integrated circuits. Here, the self‐assembled monolayer field‐effect transistor concept is applied as a scalable method to realize fully integrated complementary inverters by stepwise semiconductor deposition. Two‐component stacked bilayer ambipolar transistors are fabricated by semiconducting self‐assembled monolayers (n‐SAM or p‐SAM) as the bottom layer and a complementary thin‐film semiconductor layer on top. The integrated complementary metal‐oxide‐semiconductor like (CMOS‐like) inverter achieves proper logic performances. The nanometer‐thin monolayers exhibit effective charge transport and their flat, homogeneous surfaces benefit the interconnected growth of the top layer. Furthermore, by controlling the solution‐based and region‐selective deposition of p‐ and n‐type SAMs, fully integrated CMOS inverters are realized on wafer scale by photolithography for the first time. The CMOS inverters show a nearly 100% yield with a gain up to 48, and noise margin 3.68 V (73.6% of VDD/2). The strategy of semiconducting SAMs for digital logic gates demonstrates a reliable approach for sophisticated large‐area circuits.

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“…The PTCDI derivatives are representative n-type semiconducting materials with high electron mobilities that provide favorable energy alignment for charge transfer at the interface with pentacene. − The three PTCDI derivatives include different substituents on the nitrogen atoms of the imide groups, i.e., octyl, (4-fluorophenyl)ethyl, and (2,4-fluorophenyl)ethyl. The molecules with different fluorine group contents were expected to exhibit different interactions with the underlying pentacene layer, especially as the PTCDI derivatives tended to stand upright on pentacene in an edge-on configuration. ,, The HOMO/LUMO energy levels and band gaps of these PTCDI derivatives were nearly identical (Figure ). Accordingly, they can serve as model systems for investigating the impact of the charge transfer patch microstructure while energy alignment issues are avoided.…”

Section: Introductionmentioning

confidence: 99%

“…OFET performances may be further improved using n-type semiconductor patches that partially cover a p-type semiconducting channel. − These pn-heterostructures with suitable energy level alignment can transfer electrons in a p-type channel to an n-type semiconductor patch, or holes can migrate from the patches to the p-type channel. Charge transfer between the molecules can dramatically enhance the carrier mobility of a device.…”

Section: Introductionmentioning

confidence: 99%

pn-Heterojunction Effects of Perylene Tetracarboxylic Diimide Derivatives on Pentacene Field-Effect Transistor

Yu¹,

Kang

et al. 2015

ACS Appl. Mater. Interfaces

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We investigated the heterojunction effects of perylene tetracarboxylic diimide (PTCDI) derivatives on the pentacene-based field-effect transistors (FETs). Three PTCDI derivatives with different substituents were deposited onto pentacene layers and served as charge transfer dopants. The deposited PTCDI layer, which had a nominal thickness of a few layers, formed discontinuous patches on the pentacene layers and dramatically enhanced the hole mobility in the pentacene FET. Among the three PTCDI molecules tested, the octyl-substituted PTCDI, PTCDI-C8, provided the most efficient hole-doping characteristics (p-type) relative to the fluorophenyl-substituted PTCDIs, 4-FPEPTC and 2,4-FPEPTC. The organic heterojunction and doping characteristics were systematically investigated using atomic force microscopy, 2D grazing incidence X-ray diffraction studies, and ultraviolet photoelectron spectroscopy. PTCDI-C8, bearing octyl substituents, grew laterally on the pentacene layer (2D growth), whereas 2,4-FPEPTC, with fluorophenyl substituents, underwent 3D growth. The different growth modes resulted in different contact areas and relative orientations between the pentacene and PTCDI molecules, which significantly affected the doping efficiency of the deposited adlayer. The differences between the growth modes and the thin-film microstructures in the different PTCDI patches were attributed to a mismatch between the surface energies of the patches and the underlying pentacene layer. The film-morphology-dependent doping effects observed here offer practical guidelines for achieving more effective charge transfer doping in thin-film transistors.

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Discontinuous pn-Heterojunction for Organic Thin Film Transistors

Cited by 14 publications

References 47 publications

Schottky‐Barrier‐Controllable Graphene Electrode to Boost Rectification in Organic Vertical P–N Junction Photodiodes

Schottky‐Barrier‐Controllable Graphene Electrode to Boost Rectification in Organic Vertical P–N Junction Photodiodes

Wafer‐Scale Organic Complementary Inverters Fabricated with Self‐Assembled Monolayer Field‐Effect Transistors

pn-Heterojunction Effects of Perylene Tetracarboxylic Diimide Derivatives on Pentacene Field-Effect Transistor

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