Discordant Distortion in Cubic GeMnTe2 and High Thermoelectric Properties of GeMnTe2-x%SbTe

Dong, Jinfeng; Jiang, Yilin; Sun, Yandong; Liu, Jue; Pei, Jun; Li, Wei; Tan, Xian Yi; Hu, Lei; Jia, Ning; Xu, Ben; Li, Qian; Li, Jing‐Feng; Yan, Qingyu; Kanatzidis, Mercouri G.

doi:10.1021/jacs.2c12877

Cited by 30 publications

(17 citation statements)

References 63 publications

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“…As may be seen, the electrical conductivity of GeMnTe 2 −2%SbTe exhibits an inflection point near 600 K, which was attributed to the bipolar effect in previous study. 40,42,43 In GeMnTe 2 −x%SbTe, the carrier concentration varies from 3 × 10 20 to 13 × 10 20 cm −3 , whereas the position of the inflection point is fixed at 600 K. 42 As for normal semiconductors containing two kinds of carrier, the Seebeck coefficient and electrical conductivity can be written as = + semi e h…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Bipolar-like Effect and its Suppression in Magnetic Thermoelectrics GeMnTe₂

Zhong,

Chen,

Cai

et al. 2024

ACS Appl. Electron. Mater.

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Bipolar effect is a common negative factor for the optimization of thermoelectric materials. Usually, it can be suppressed by enlarging the band gap or increasing the concentration of the majority carrier. Here, we report the anomalous bipolar-like effect and its suppression in GeMnTe2, an emerging thermoelectrics with narrow band gap and high carrier concentration. By introducing extra Sb doping, the transport inflection points induced by the bipolar-like effect are removed, accompanied by the decrease of the carrier concentration. Based on the X-ray diffraction and magnetic susceptibility measurements, the anomalous effect is attributed to the magnetic interaction rather than the competition between the majority and minority carriers. Owing to the suppression of the bipolar-like effect and optimization of carrier concentration, the peak zT of GeMnTe2 is significantly enhanced from 0.6 to 1.3 at 823 K.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Bipolar-like Effect and its Suppression in Magnetic Thermoelectrics GeMnTe₂

Zhong,

Chen,

Cai

et al. 2024

ACS Appl. Electron. Mater.

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“…The second CBM is situated at Γ point with an energy offset of 0.19 eV. Although the energy offset is relatively large to induce the band convergence effect, there are still possibilities for achieving it through proper element doping or alloying. , Furthermore, the valence band maximum (VBM, L point with N v of 4) and second VBM ( N v of 12) are converged with an energy offset of less than 0.1 eV, indicating that there are possibility to achieve p-type AgBiPbS 3 with good thermoelectric performance as well.…”

Section: Resultsmentioning

confidence: 99%

N-Type Thermoelectric AgBiPbS₃ with Nanoprecipitates and Low Thermal Conductivity

Dong,

Zhang,

Liu

et al. 2023

Inorg. Chem.

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Thermoelectric sulfide materials are of particular interest due to the earth-abundant and cost-effective nature of sulfur. Here, we report a new n-type degenerate semiconductor sulfide, AgBiPbS3, which adopts a Fm3̅m structure with a narrow band gap of ∼0.32 eV. Despite the homogeneous distribution of elements at the scale of micrometer, Ag2S nanoprecipitates with dimensions of several nanometers were detected throughout the matrix. AgBiPbS3 exhibits a low room-temperature lattice thermal conductivity of 0.88 W m–1 K–1, owing to the intrinsic low lattice thermal conductivity of Ag2S and the effective scattering of phonons at nanoprecipitate boundaries. Moreover, compared to AgBiS2, AgBiPbS3 demonstrates a significantly improved weighted mobility of >16 cm2 V–1 s–1 at 300 K, leading to an enhanced PF of 1.6 μW cm–1 K–2 at 300 K. The superior electrical transport in AgBiPbS3 can be attributed to the high valley degeneracy of the L point (the conduction band minimum), which is contributed by the Pb s and Pb p orbitals. Further, Ga doping is found to be effective in modulating the Fermi levels of AgBiPbS3, leading to further enhancement of PF with a PFave of 2.7 μW cm–1 K–2 in the temperature range of 300–823 K. Consequently, a relatively high ZTave of 0.22 and a peak ZT of ∼0.4 at 823 K have been achieved in 3% Ga-doped AgBiPbS3, highlighting the potential of AgBiPbS3 as an n-type thermoelectric sulfide.

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“…The performance of thermoelectric materials is characterized by the dimensionless figure of merit, ZT = S M 2 σT/κ, where S M is Seebeck coefficients (normally S is used to represent the Seebeck coefficient, here the subscript is used to distinguish Seebeck coefficient from the entropy), σ is electrical conductivity, κ is thermal conductivity, and T is the absolute temperature. [19][20][21] Physical properties are not only attributed to individual constituent elements but also to their mutual interactions. Different elements have different atomic masses and ionic radii, which would also lead to bonds with different strengths.…”

Section:  Main Textmentioning

confidence: 99%

High entropy strategy on thermoelectric materials

Dong¹,

Yan²

2023

MatLab

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High-entropy materials, which consist of multiple elements occupying a single sublattice in a disordered manner, have emerged as innovative material systems with various promising applications. Many macroscopic physical properties, such as electrical transport and thermal transport, are closely related to the periodic distribution of atoms. In high-entropy compounds, the long-range periodic arrangement of atoms is broken down by the disordered distribution of various elements, which would lead to changes in physical properties. Therefore, the high-entropy idea will open new avenues for designing these functional materials with promising performance and high reliability. This perspective focuses on the high-entropy strategies of thermoelectric materials, discussing how high entropy will alter their properties. The possible routes of designing high-entropy high-performance thermoelectric materials are prospected, which can also provide enlightenment for the development of high-entropy systems in other research fields.

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Discordant Distortion in Cubic GeMnTe₂ and High Thermoelectric Properties of GeMnTe₂-x%SbTe

Cited by 30 publications

References 63 publications

Bipolar-like Effect and its Suppression in Magnetic Thermoelectrics GeMnTe₂

Bipolar-like Effect and its Suppression in Magnetic Thermoelectrics GeMnTe₂

N-Type Thermoelectric AgBiPbS₃ with Nanoprecipitates and Low Thermal Conductivity

High entropy strategy on thermoelectric materials

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Discordant Distortion in Cubic GeMnTe2 and High Thermoelectric Properties of GeMnTe2-x%SbTe

Cited by 30 publications

References 63 publications

Bipolar-like Effect and its Suppression in Magnetic Thermoelectrics GeMnTe2

Bipolar-like Effect and its Suppression in Magnetic Thermoelectrics GeMnTe2

N-Type Thermoelectric AgBiPbS3 with Nanoprecipitates and Low Thermal Conductivity

High entropy strategy on thermoelectric materials

Contact Info

Product

Resources

About

Discordant Distortion in Cubic GeMnTe₂ and High Thermoelectric Properties of GeMnTe₂-x%SbTe

Bipolar-like Effect and its Suppression in Magnetic Thermoelectrics GeMnTe₂

Bipolar-like Effect and its Suppression in Magnetic Thermoelectrics GeMnTe₂

N-Type Thermoelectric AgBiPbS₃ with Nanoprecipitates and Low Thermal Conductivity