2023
DOI: 10.48550/arxiv.2301.07848
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Disentangling Losses in Tantalum Superconducting Circuits

Abstract: Superconducting qubits are a leading system for realizing large scale quantum processors, but overall gate fidelities suffer from coherence times limited by microwave dielectric loss. Recently discovered tantalum-based qubits exhibit record lifetimes exceeding 0.3 ms. Here we perform systematic, detailed measurements of superconducting tantalum resonators in order to disentangle sources of loss that limit state-of-the-art tantalum devices. By studying the dependence of loss on temperature, microwave photon num… Show more

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Cited by 5 publications
(13 citation statements)
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“…[19,20] We have recently reported measurements on superconducting resonators showing that two-level systems at material interfaces are the dominant source of dielectric loss for tantalum devices, and that some of these two-level system defects reside in the surface oxides of tantalum. [21] In that work, we estimated that the oxide layer is responsible for around half of the surfacerelated losses in state-of-the-art devices by using detailed comparisons between devices treated with different acids. In this work, we investigate the nature of the tantalum oxide resulting from these chemical treatments.…”
Section: Introductionmentioning
confidence: 99%
“…[19,20] We have recently reported measurements on superconducting resonators showing that two-level systems at material interfaces are the dominant source of dielectric loss for tantalum devices, and that some of these two-level system defects reside in the surface oxides of tantalum. [21] In that work, we estimated that the oxide layer is responsible for around half of the surfacerelated losses in state-of-the-art devices by using detailed comparisons between devices treated with different acids. In this work, we investigate the nature of the tantalum oxide resulting from these chemical treatments.…”
Section: Introductionmentioning
confidence: 99%
“…We can use VEXPS data to elucidate potential sources of microwave loss. In [21], using data from native, BOE treated, and triacid treated samples, we estimated that if the microwave dielectric loss tangent of the tantalum oxide scales with the thickness of the oxide layer, then contributions to the microwave dielectric loss tangents from the tantalum oxide and adventitious carbon species are comparable. However, the chemical profiles of the native, BOE treated, and triacid treated samples show that the thicknesses and distributions of each of the Ta 5+ , Ta 3+ , Ta 1+ , and Ta 0 int species vary with surface treatments.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore changes in the dielectric loss tangent could arise from changes to any combination of the interface species. For example, based on these detailed chemical profiles, an alternative plausible hypothesis for the observations in [21] would be that the dielectric loss arises entirely from the Ta 3+ layer rather than separate contributions of the oxide and adventitious hydrocarbons. Independently varying the thickness and distribution of the Ta 5+ , Ta 3+ , Ta 1+ , and Ta 0 int over many more surface compositions than those measured in [21] could be used to determine a precise, atomistic model for dielectric loss.…”
Section: Resultsmentioning
confidence: 99%
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