Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates

Mehmel, L.; Issaoui, Riadh; Brinza, Ovidiu; Tallaire, Alexandre; Mille, V.; Delchevalrie, Julien; Saada, S.; Arnault, Jean-Charles; Bénédic, F.; Achard, Jocelyn

doi:10.1063/5.0033741

Cited by 19 publications

(8 citation statements)

References 42 publications

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“…In addition, the Raman spectra (Laser Raman Spectrometer, Horiba Scientific, Kyoto, Japan) were collected from points (a-e) specified on the optical microscope picture of the substrate the following growth to analyze the diamond structure and phase composition along the channel. The Raman excitation wavelength was 532 nm, which shows a strong peak at 1332 cm −1 in all five (a-e) regions, indicating a good composition of the single-crystal diamond [22,23], as shown in Figure 3b. In addition, a peak was located in the Raman spectrum at 1430-1470 cm −1 , and there was a characteristic peak produced by transpolyacetylene [24], which often appears in CVD diamond.…”

Section: Resultsmentioning

confidence: 86%

“…The Raman excitation wavelength was 532 nm, which shows a strong peak at 1332 cm −1 in all five (a–e) regions, indicating a good composition of the single-crystal diamond [ 22 , 23 ], as shown in Figure 3 b. In addition, a peak was located in the Raman spectrum at 1430–1470 cm −1 , and there was a characteristic peak produced by transpolyacetylene [ 24 ], which often appears in CVD diamond.…”

Section: Resultsmentioning

confidence: 99%

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Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser

et al. 2021

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Two types of a trench with conventional vertical and new reverse-V-shaped cross-sections were fabricated on single crystal diamond (SCD) substrate using a micro-jet water-assisted laser. In addition, a microwave plasma chemical vapor deposition device was used to produce multiple micrometer-sized channels using the epitaxial lateral overgrowth technique. Raman and SEM methods were applied to analyze both types of growth layer characterization. The hollowness of the microchannels was measured using an optical microscope. According to the findings, the epitaxial lateral overgrowth layer of the novel reverse-V-shaped trench produced improved SCD surface morphology and crystal quality.

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Section: Resultsmentioning

confidence: 86%

Section: Resultsmentioning

confidence: 99%

Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser

et al. 2021

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“…The lase wavelength was 532 nm, and we chose five positions on the cross-section of the diamon bulk, which were 5, 20, 50, 100, 500 µm away from the diamond/Ir interface, respectively A weak first-order diamond characteristic peak (1332 cm −1 ) could be observed at the pos tion of 5 µm above the diamond/Ir interface. However, there were fluorescence peaks re lated to nitrogen (N) defects in a wide range of 1460 cm −1 , the intensity of which exceede that of the diamond characteristic peaks [25,26]. As growth continued, the intensity of th diamond characteristic peak significantly increased, while the nitrogen-related peaks re mained stable.…”

Section: Resultsmentioning

confidence: 99%

Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al2O3 Substrates

et al. 2022

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This paper investigates the formation and propagation of defects in the heteroepitaxial growth of single-crystal diamond with a thick film achieving 500 µm on Ir (001)/Al2O3 substrate. The growth of diamond follows the Volmer–Weber mode, i.e., initially shows the islands and subsequently coalesces to closed films. The films’ strain imposed by the substrate gradually relaxed as the film thickness increased. It was found that defects are mainly located at the diamond/Ir interface and are then mainly propagated along the [001] direction from the nucleation region. Etching pits along the [001] direction formed by H2/O2 plasma treatment were used to show defect distribution at the diamond/Ir/Al2O3 interface and in the diamond bulk, which revealed the reduction of etching pit density in diamond thick-film surface. These results show the evident impact of the thickness on the heteroepitaxially grown diamond films, which is of importance for various device applications.

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“…® Other groups have reported 2-inch-scale substrates labs also using Ir hetereoepitaxy [9,10]. However, the crystalline quality is still worse than that of HPHT (commonly dislocation density of 10 7 to 10 9 cm −2 in heteroepitaxy growth) [11][12][13]. An alternative method to obtain large diamond substrates is growing on a mosaic configuration by CVD.…”

Section: Diamond Substratesmentioning

confidence: 99%

Diamond for Electronics: Materials, Processing and Devices

et al. 2021

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Progress in power electronic devices is currently accepted through the use of wide bandgap materials (WBG). Among them, diamond is the material with the most promising characteristics in terms of breakdown voltage, on-resistance, thermal conductance, or carrier mobility. However, it is also the one with the greatest difficulties in carrying out the device technology as a result of its very high mechanical hardness and smaller size of substrates. As a result, diamond is still not considered a reference material for power electronic devices despite its superior Baliga’s figure of merit with respect to other WBG materials. This review paper will give a brief overview of some scientific and technological aspects related to the current state of the main diamond technology aspects. It will report the recent key issues related to crystal growth, characterization techniques, and, in particular, the importance of surface states aspects, fabrication processes, and device fabrication. Finally, the advantages and disadvantages of diamond devices with respect to other WBG materials are also discussed.

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Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates

Cited by 19 publications

References 42 publications

Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser

Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser

Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al2O3 Substrates

Diamond for Electronics: Materials, Processing and Devices

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