Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate

Yamanaka, Junji; Sawano, Kentaro; Suzuki, Kumiko; Nakagawa, Kiyokazu; Ozawa, Yusuke; Hattori, Takeo; Shiraki, Y.

doi:10.1016/j.tsf.2005.08.392

Cited by 6 publications

(6 citation statements)

References 20 publications

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“…11). These dislocations are confined to the SiGe/Si interface, as reported in reference [28,29] and leaving the upper portion of the film defect free. …”

Section: Discussionsupporting

confidence: 53%

Role of thermal annealing on SiGe thin films fabricated by PECVD

Joseph

Saraf

Umamaheswara

et al. 2015

Materials Science in Semiconductor Processing

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“…11). These dislocations are confined to the SiGe/Si interface, as reported in reference [28,29] and leaving the upper portion of the film defect free. …”

Section: Discussionsupporting

confidence: 53%

Role of thermal annealing on SiGe thin films fabricated by PECVD

Joseph

Saraf

Umamaheswara

et al. 2015

Materials Science in Semiconductor Processing

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“…Therefore, thermal treatment at 700ºC for 10 min was performed in N 2 atmosphere to recrystalize it, which led to fine H-termination. Note that even after the recrystalization through the annealing process, the end-of-range defects still remained underneath the Si surface, which was confirmed by transmission electron microscope (TEM) observation (34). These remaining defects are expected to contribute to the relaxation enhancement of the overgrown SiGe layers.…”

Section: Methodsmentioning

confidence: 69%

Fabrication of SiGe Virtual Substrates by Ion Implantation Technique

Sawano

Shiraki²,

Nakagawa³

2007

ECS Trans.

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We have developed a new SiGe virtual substrate fabrication technique where pre-ion-implantation is employed. In this method, prior to growth of SiGe layers, defects are intentionally introduced in the vicinity of Si substrate surfaces via implantation of relatively heavy ions, such as Ar + , Si + and Ge + . Thin SiGe layers are grown on the ion-implanted Si substrates and the subsequent annealing considerably enhances the strain relaxation of the SiGe layers due to implantation-induced defects working as dislocation generation sources. As a result, extremely thin (100 nm) and largely-relaxed SiGe layers with atomically flat surfaces and very uniform strain distribution are obtained. These thin SiGe virtual substrates can be applied to the fabrication of strained-Si nMOSFETs and the significant mobility enhancement over the bulk Si device is obtained. These results clearly indicate that the ion implantation technique is very promising for realization of high-performance Si/Ge heterodevices based on SiGe virtual substrates.

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“…A slight change of lattice spacing around hetero-interfaces of crystalline materials has an important role for their properties in most of the cases in general. In a field of semiconductor devices, lattice strains due to hetero-structures are important to realize high-speed transistors and we also have been studying them [1] spacing has been reported by other researchers [6]- [12]. The essence of this Journal of Materials Science and Chemical Engineering technique is as follows: A moiré can be observed when the electron beam is focused small enough, the scan periodicity of the STEM is close to the crystal plane spacing, and the scan direction is suitable for the crystal plane.…”

Section: Introductionmentioning

confidence: 99%

Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré

Yamanaka¹,

Shirakura²,

Yamamoto³

et al. 2018

MSCE

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A moiré between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.

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Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate

Cited by 6 publications

References 20 publications

Role of thermal annealing on SiGe thin films fabricated by PECVD

Role of thermal annealing on SiGe thin films fabricated by PECVD

Fabrication of SiGe Virtual Substrates by Ion Implantation Technique

Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré

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Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate

Cited by 6 publications

References 20 publications

Role of thermal annealing on SiGe thin films fabricated by PECVD

Role of thermal annealing on SiGe thin films fabricated by PECVD

Fabrication of SiGe Virtual Substrates by Ion Implantation Technique

Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moir&#233;

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Product

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Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré