Role of thermal annealing on SiGe thin films fabricated by PECVD

Joseph, Susmitha; Saraf, Nileshi; Umamaheswara, Adithi; Madakasira, Vijayaraghavan; Bhat, Navakanta

doi:10.1016/j.mssp.2015.07.043

Cited by 6 publications

(2 citation statements)

References 29 publications

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“…For reference, the Raman scan of the as-deposited SiGe film was also included. The scan from the as-deposited sample showed peaks near 284, 363, and 462 cm −1 , related to the Ge-Ge, Si-Ge, and Si-Si TO (transverse optic) vibrational modes, respectively [14,15]. The peak from the Si-Ge vibrational mode confirmed the formation of the SiGe alloy.…”

Section: Raman Spectroscopymentioning

confidence: 99%

Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

et al. 2021

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Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.

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Section: Raman Spectroscopymentioning

confidence: 99%

Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate

et al. 2021

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“…[10][11][12] Moreover, the Si-Ge deposition at low temperature makes their integration on glass substrate possible, opening new possibilities for photonic and photovoltaic applications. 13 However, the drawback of this technique is the lack of consistency in the crystalline structure, which is characterized by the introduction of defects and quasiamorphous grains requiring further annealing [13][14][15] and metal induced crystallization process to obtain the Si-Ge polycrystals with desired properties. [16][17][18] Moreover, SiGe compound can be used in various applications with respect to its morphology.…”

Section: A Introductionmentioning

confidence: 99%